DC COMPONENTS CO., LTD. DMBTA43 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 Absolute Maximum Ratings(TA=25 Characteristic .108(0.65) .089(0.25) 2 o C) Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical oCharacteristics (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 200 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 200 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=10µA IC=100µA Collector Cutoff Current ICBO - - 100 nA VCB=160V Emitter Cutoff Current IEBO - - 100 nA VEB=4V VCE(sat) - - 0.5 V IC=20mA, IB=2mA Collector-Emitter Saturation Voltage(1) (1) Base-Emitter Saturation Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width VBE(sat) - - 0.9 V IC=20mA, IB=2mA hFE1 25 - - - IC=1mA, VCE=10V hFE2 40 - - - IC=10mA, VCE=10V hFE3 40 - - - IC=30mA, VCE=10V fT 50 - - MHz - - 3 pF Cob 380µs, Duty Cycle 2% IC=10mA, VCE=20V, f=100MHz VCB=20V, f=1MHz