DC COMPONENTS CO., LTD. R DMBTA44 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 2 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 450 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA Total Power Dissipation PD 350 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO 450 - - V Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=10µA Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Output Capacitance (1)Pulse Test: Pulse Width Test Conditions IC=100µA ICBO - - 100 nA VCB=400V ICES - - 500 nA VCE=400V IEBO - - 100 nA VEB=4V VCE(sat)1 - - 0.4 V IC=1mA, IB=0.1mA VCE(sat)2 - - 0.5 V IC=10mA, IB=1mA VCE(sat)3 - - 0.75 V IC=50mA, IB=5mA VBE(sat) - - 0.75 V IC=10mA, IB=1mA hFE1 40 - - - IC=1mA, VCE=10V hFE2 50 - 300 - IC=10mA, VCE=10V hFE3 45 - - - IC=50mA, VCE=10V hFE4 40 - - - - 4 6 pF Cob 380µs, Duty Cycle 2% IC=100mA, VCE=10V VCB=20V, f=1MHz