DC COMPONENTS CO., LTD. R DXTA94 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. SOT-89 Pinning .063(1.60) .055(1.40) .066(1.70) .059(1.50) 1 = Base 2 = Collector 3 = Emitter Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -6 V Collector Current IC -500 mA Total Power Dissipation PD 1 W Junction Temperature TJ +150 o -55 to +150 o Storage Temperature TSTG .102(2.60) .095(2.40) .167(4.25) .159(4.05) Absolute Maximum Ratings(TA=25oC) 1 .020(0.51) .014(0.36) 2 3 .060(1.52) .058(1.48) .016(0.41) .014(0.35) .120(3.04) .117(2.96) .181(4.60) .173(4.40) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -400 - - V Collector-Emitter Breakdown Voltage BVCEO -400 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -6 - - V IE=-10µA Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) (1)Pulse Test: Pulse Width Test Conditions IC=-100µA ICBO - - -100 nA VCB=-400V ICES - - -500 nA VCE=-400V, VBE=0 IEBO - - -100 nA VEB=-6V VCE(sat)1 - - -0.35 V IC=-1mA, IB=-0.1mA VCE(sat)2 - - -0.5 V IC=-10mA, IB=-1mA VCE(sat)3 - - -0.75 V IC=-50mA, IB=-5mA VBE(sat) - - -0.75 V IC=-10mA, IB=-1mA hFE1 40 - - - IC=-1mA, VCE=-10V hFE2 50 - 300 - IC=-10mA, VCE=-10V hFE3 45 - - - IC=-50mA, VCE=-10V hFE4 40 380µs, Duty Cycle 2% - - - IC=-100mA, VCE=-10V