DC COMPONENTS CO., LTD. LB124E DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-220AB Pinning .405(10.28) .380(9.66) 1 = Base 2 = Collector 3 = Emitter .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 8 V Collector Current(DC) IC 2 A Collector Current(Pluse) IC 4 A Total Power Dissipation(TC=25 C) PD 35 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .625(15.87) .570(14.48) .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 600 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 8 - - V IE=1mA, IC=0 IC=1mA, IE=0 Collector Cutoff Current ICBO - - 10 µA VCB=600V, IE=0 Emitter Cutoff Current IEBO - - 10 µA VEB=9V, IC=0 Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) VCE(sat)1 - - 0.3 V IC=0.1A, IB=10mA VCE(sat)2 - - 0.8 V IC=0.3A, IB=30mA VBE(sat)1 - - 0.9 V IC=0.1A, IB=10mA VBE(sat)2 - - 1.2 V IC=0.3A, IB=30mA hFE1 10 - 40 - IC=0.3A, VCE=5V hFE2 10 - - - IC=0.5A, VCE=5V hFE3 6 - - - IC=1A, VCE=5V fT 15 380µs, Duty Cycle 2% - - MHz (1) DC Current Gain Transition Frequency (1)Pulse Test: Pulse Width Classification of hFE1 Rank B1 B2 Range 10~17 13~22 B3 18~27 B4 B5 B6 23~32 28~37 33~40 IC=0.3A, VCE=10V, f=100MHz