DC COMPONENTS CO., LTD. R MID112 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers. TO-251 Pinning .268(6.80) .252(6.40) 1 = Base 2 = Collector 3 = Emitter .022(0.55) .018(0.45) .217(5.50) .205(5.20) .063(1.60) .055(1.40) 2 .284(7.20) .268(6.80) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit VCBO 100 V Collector-Base Voltage Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V IC 2 A PD 20 Collector Current o Total Power Dissipation(TC=25 C) 1 Junction Temperature TJ +150 Storage Temperature TSTG -55 to +150 o 3 .059(1.50) .035(0.90) .035 Max (0.90) .256 Min (6.50) .024(0.60) .018(0.45) .032 Max (0.80) .181 Typ (4.60) W o 2 .095(2.40) .087(2.20) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO 100 - - V IC=1mA Collector-Emitter Breakdown Voltage BVCEO 100 - - V IC=30mA Collector Cutoff Current Emitter Cutoff Current Test Conditions ICBO - - 10 µA VCB=80V ICEO - - 20 µA VCE=50V IEBO - - 2 mA Collector-Emitter Saturation Voltage(1) VCE(sat) - - 2.5 V IC=2A, IB=8mA Base-Emitter On Voltage(1) VBE(on) - - 2.8 V IC=2A, VCE=3V DC Current Gain(1) Output Capacitance (1)Pulse Test: Pulse Width VBE=5V hFE1 500 - - - IC=0.5A, VCE=3V hFE2 1K - 12K - IC=2A, VCE=3V hFE3 200 - - - Cob - - 100 pF 380µs, Duty Cycle 2% IC=4A, VCE=3V VCB=10V