DC COMPONENTS CO., LTD. R MID122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-251 Pinning .268(6.80) .252(6.40) 1 = Base 2 = Collector 3 = Emitter .022(0.55) .018(0.45) .217(5.50) .205(5.20) .063(1.60) .055(1.40) 2 .284(7.20) .268(6.80) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V IC 8 A Collector Current o Total Power Dissipation(TC=25 C) PD 20 Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o 1 2 3 .059(1.50) .035(0.90) .035 Max (0.90) .256 Min (6.50) .024(0.60) .018(0.45) .032 Max (0.80) W .181 Typ (4.60) C .095(2.40) .087(2.20) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO 100 - - V Collector-Emitter Breakdown Voltage BVCEO 100 - - V IC=30mA Emitter-Base Breakdown Voltage BVEBO 5 - - V IE=1mA Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Test Conditions IC=1mA ICBO - - 10 µA VCB=100V ICEO - - 10 µA VCE=50V IEBO - - 2 mA VEB=5V VCE(sat)1 - - 2 V IC=4A, IB=16mA VCE(sat)2 - - 4 V IC=8A, IB=80mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 4.5 V IC=8A, IB=80mA Base-Emitter On Voltage(1) VBE(on) - - 2.8 V IC=4A, VCE=4V hFE1 1K - 12K - IC=4A, VCE=4V hFE2 100 - - - Cob - 130 - pF DC Current Gain(1) Output Capacitance (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% IC=8A, VCE=4V VCB=10V, f=1MHz