DEC DB1008

DIOTEC ELECTRONICS CORP.
Data Sheet No. BRDB-1000-1C
ABDB-1000-1C
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
10 AMP SILICON BRIDGE RECTIFIERS
MECHANICAL SPECIFICATION
FEATURES
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
ACTUAL SIZE
DT
DB1004
SERIES DB1000-DB1010 and ADB1004-ADB1008
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
BH
r+s
SURGE OVERLOAD RATING TO 400 AMPS PEAK
t+u
UL RECOGNIZED - FILE #E124962
LL
_
+
RoHS COMPLIANT
LD
D1
MECHANICAL DATA
Case: Molded Epoxy (UL Flammability Rating 94V-0)
SYM
Terminals: Round silver plated copper pins
MILLIMETERS
+
INCHES
MAX
BL
18.5
MAX
19.6
MIN
Soldering: Per MIL-STD 202 Method 208 guaranteed
0.73
0.77
Polarity: Marked on side of case; positive lead at beveled corner
BH
6.4
7.6
0.25
0.3
Mounting Position: Any. Through hole provided for #6 screw
D1
LL
12.2
13.2
0.48
0.52
22.2
n/a
LD
1.2
1.3
0.875
0.048
0.052
MIN
Weight: 0.18 Ounces (5.4 Grams)
BL
_
n/a
BL
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
! " # $ % & " " ' " ( ) $ *
PARAMETER (TEST CONDITIONS)
SYMBOL
ßXàâáPã:äåàâæ?æAçéè
ê:ëAêVìêVíåîðïXñ
RATINGS
ò
ó
õXó
óâù?ùAúéû
òå
ü:ô ýAüVþòP
üVöøÿ÷ UNITS
TVUXWZYV[X\^]V_X`baXcedXfegXheiXjlkXmonXprqXs
wx/xy{z||/}~€€ƒ‚„/„„†…‡/‡A…‰ˆŠ/Š‹ŒŽŽ‘’/’“^”•/•–—˜?—˜
Series Number
Maximum DC Blocking Voltage
V R?S
Working Peak Reverse Voltage
V FGIH
Maximum Peak Recurrent Reverse Voltage
V J?J?K
V L5M L?NPOQ
RMS Reverse Voltage
Power Dissipation in V
D1
Ú Û:ÜAÝ
Þ
P t?u
Region for 100 S Square Wave
Continuous Power Dissipation in V
BCED
@ T =80 C (Heat Sink Temp)
< =?>A@
Region
Pv
Thermal Energy (Rating for Fusing)
»/¼½¿¾/ÀÁ¡ÂÃĤÅÆÈÇÉËÊÍÌ/οÏÐѱÒ/ÓÔ
³´´
µ¶ ·
¸¹ º
I It
Peak Forward Surge Current. Single 60Hz Half-Sine Wave+
Superimposed on Rated Load (JEDEC Method). TJ = 150 C
@ T = 50 C (Notes 1, 3)
@ T = 50 C (Note 2)
Average Forward Rectified Current
I1
,
T , T-/.0
Junction Operating and Storage Temperature Range
Minimum Avalanche Voltage
V= >[email protected] D
Maximum Avalanche Voltage
VE FGAHI/JLK
Maximum Forward Voltage (Per Diode) at 5 Amps DC
Maximum Reverse Current at Rated V MN
O
P
@ T = 25 C
Q
R
@T = 100 C
Minimum Insulation Breakdown Voltage (Circuit to Case)
Typical Thermal Resistance
›œœžŸŸ¡ ¢¢¤£¥§¦¨/¨¡©ªª¡«/¬¬®­¯¯±°/²²
Junction to Ambient (Note 2)
Junction to Case (Note 1)
V $
%
I ST
V U VW
R
R!"#
×/ØÙ
™šš/š
VOLTS
ÕÖ/Ö
WATTS
AMPS
SEC
AMPS
2 3354 687:93;
)+**-,/.10 *32
°C
&' (
:; <
4+55-6/718 539
X1Y Z[-\ ]_^`AY
X1Y ZXa
b
cd
fggg
i_j
k
v1w+xy
z{L| }L~
A€  ‚_ƒ
„…‡†
ˆ
‰Š „‚‡†‰‹Œ }Ž_Œ Ž‘Œ }’}’“Š ”_ •–| }—Œ ˜•…™Ž‡}‘Œ š•…›Ž‘Œ •…‡~_œ ˆ_…ž ‰
ˆ
… Ÿ_ œLŠ „
| —~
A€  ‚_ƒ
„…‡†
ˆ
‰Š „‚‡†‰ž¡¢£1†_œ€ ‚ ¦§ ¨ ©‡ª« ¬­“®¯
«L° ±’²³ž³›®¯
« ´_µ¶
·
·¸¹·ºL»_®º¼_»ž½
¹ § »
¾_¸¿ ¸º»ž¿ ¸¼¾_¨ ©‡¶À ‘Œ L¤‹¥| ˜Œ ‹…‡…ž~
° Á´
Â1¶¿ ¨½
¹ § »
¾_¸¶
¼ž©¸ºL¨_®_§ ¼
Ã+¦§ ¨ ©ÄÅ®µ¹ ¸L¦¥ÆÇ®_§ ¼¾‡®_§ ¿ § µ¶¼¨ ©¸¹ ³‡º¿µ¶³‡·_¶
Ç
¼»È½¸L¨ ¦/¸¸¼ž½_¹ § »_¾
¸º¼_»ž³‡¶
Ç
¼¨ § ¼¾‡®_Ç_¹ À ºµ¸À ¶¹³‡ºÉ_§ ³žÇ_³ ©_¸ºL¨_¨ ¹ º¼®LÀ ¸¹ «
° Ê_´Ë©¸L®¸½
¹ § »
¾_¸L®¸LÉ_©_§ ½
§ ¨
¨ ©¸ºL̺¿ º¼_µ©_¸µ©_º¹ ºµL¨ ¸¹ § ®L¨ § µº¨½
¹ ¸ºÃ»
¶¦¼
«Í À
ζ
Ç
¹º·
·_¿ § µºL¨ § ¶¼‡¹ ¸L¯Ç_§ ¹ ¸L®º®_·¸µ§ À § µ½
¹ ¸ºÃ»
¶_¦/¼Ì¶
¿ ¨ º¾
¸¹ º¼¾
¸Æ·
¿ ¸º®¸µ¶
¼¨ ºµL¨Ç®_«
VOLTS
e A
VOLTS
h
C/W
l m n oo n p q
E33
DIOTEC ELECTRONICS CORP.
Data Sheet No. BRDB-1000-2C
ABDB-1000-2C
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
10 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB1000 - DB1010 and SERIES ADB1004 - ADB1008
12
400
350
10
Case
Peak Forward Surge Current
(Amperes)
Average Forward Current, Io
(Amperes)
Resistive and Inductive Loads
8
Ambient
6
4
300
250
200
150
2
NOTE 2
100
0
0
50
Õ
100
150
50
Temperature, C
100
Number of Cycles at 60 Hz
FIGURE 1. FORWARD CURRENT DERATING CURVE
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
öL÷
úûû
ô’õ
Instantaneous Reverse Current, I
(Microamperes)
Instantaneous Forward Current
Amperes
10
1
øù
1.0
NOTE 3
0.1
îï ð
T = 25 C
ëì ë_í
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
T = 100 C
ñò ó
Ú
ÛÜÞÝß
àLá
âãåäæLæèçéê
ÖØ×Ù
2.0
Percent of Rated Peak Reverse Voltage
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
NOTES
Capacitance, pF
NOTE 4
(1) Case Temperature, T With Bridge Mounted on
5.1" x 4.3" x 0.11" Thick (12.9cm x 10.8cm x 0.3cm)
Aluminum Plate
þÿÿ
Ambient Temperature, T With Bridge Mounted on
PC Board With 0.5" Sq. (12mm Sq.) Copper Pads
And Bridge Lead Length of 0.375" (9.5mm)
(2) T = 150 C
üý
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
E34
(3) T = 25 C; Pulse Width = 300mSec; 1% Duty Cycle
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
Ï Ð Ñ ÒLÒ Ñ Ó Ô