BCW60A ... BCW60D BCW60A ... BCW60D Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-07-31 Power dissipation – Verlustleistung 0.4 Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 1 1.3±0.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW60A ... BCW60D Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 32 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 32 V Collector-Base-voltage – Kollektor-Basis-Spannung C open VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis 1 2 Min. Typ. Max. 2) VCE = 5 V, IC = 10 µA BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 20 20 40 100 140 200 300 460 – – – – VCE = 5 V, IC = 2 mA BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 120 180 250 380 170 250 350 500 220 310 460 630 VCE = 1 V, IC = 50 mA BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 50 70 90 100 – – – – – – – – Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BCW60A ... BCW60D Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. VCEsat VCEsat – – 120 mV 200 mV 250 mV 550 mV VBEsat VBEsat – – 700 mV 830 mV 850 mV 1050 mV VBE VBE VBE – 550 mV – 520 mV 650 mV 780 mV – 750 mV – ICB0 ICB0 – – – – 20 nA 20 µA IEB0 – – 20 nA fT 100 MHz 250 MHz – CCBO – 2 pF – CEBO – 11 pF – F – 2 dB 6 dB Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 30 V, (E open) VCE = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 10 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) BCW61A ... BCW61D BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG