DIOTEC MMBTA43

MMBTA42 / MMBTA43
MMBTA42 / MMBTA43
Surface mount High Voltage Transistors
Hochspannungs-Transistoren für die Oberflächenmontage
NPN
NPN
Version 2005-06-21
1.1
2.9 ±0.1
0.4
±0.1
Type
Code
1.3
2.5 max
3
2
1
1.9
Dimensions / Maße [mm]
1=B
2=E
3=C
Power dissipation
Verlustleistung
250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBTA42
MMBTA43
Collector-Emitter-volt. - Kollektor-Emitter-Spannung
B open
VCEO
300 V
200 V
Collector-Base-voltage - Kollektor-Basis-Spannung
E open
VCBO
300 V
200 V
Emitter-Base-voltage - Emitter-Basis-Spannung
C open
VEBO
6V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
IC
500 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-65...+150°C
-65…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 200 V
IE = 0, VCB = 160 V
MMBTA42
MMBTA43
ICB0
ICB0
–
–
–
–
100 nA
100 nA
MMBTA42
MMBTA43
IEB0
IEB0
–
–
–
–
100 nA
100 nA
VCEsat
–
–
500 mV
VBEsat
–
–
900 mV
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 6 V
IC = 0, VEB = 4 V
Collector saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 20 mA, IB = 2 mA
Base saturation voltage – Basis-Sättigungsspannung 2)
IC = 20 mA, IB = 2 mA
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
MMBTA42 / MMBTA43
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE
hFE
hFE
25
40
40
–
–
–
–
–
–
fT
50 MHz
–
–
CCB0
CCB0
–
–
–
–
3 pF
4 pF
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 30 mA
Gain-Bandwidth Product – Transitfrequenz
VCE = 10 V, IC = 20 mA, f = 100 MHz
Collector-Base capacitance – Kollektor-Basis-Kapazität
VCB = 20 V, IE =ie = 0, f = 1 MHz
MMBTA42
MMBTA43
Thermal resistance junction – ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 420 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
MMBTA92, MMBTA93
Marking - Stempelung
MMBTA42 = 1D
MMBTA43 = 1E
120
[%]
100
80
60
40
20
Ptot
0
0
TA
50
100
150
[°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG