DOMINANT NPW-TSD-AE

DOMINANT
Semiconductors
Innovating Illumination
SPNovaLED
TM
DATA SHEET:
SPNovaLEDTM
InGaN White High Lumens : 350 mA
TM
Featuring a staggering brilliance and significant flux output, the
SPNovaLED™ showcases the latest technological advent in
this range. With its extremely high level of brightness and the
ultra low high profile, which is only 1.5 mm are highly suitable
for both conventional lighting and specialized application such
as automotive signal lights, traffic lights, channel lights, tube
lights and garden lights among others.
Features:
> Super high brightness surface mount LED.
> High flux output; typical 60 lumens
> 120° viewing angle.
> Compact package outline (LxWxH) of 6.0 x 6.0 x 1.5mm.
> Ultra low height profile - 1.5 mm.
> Designed for high current drive; typically 350 mA.
> Low thermal resistance; Rth (js) = 18 K/W.
> Qualified according to JEDEC moisture sensitivity Level 2.
> Compatible to both IR reflow soldering.
> Environmental friendly; RoHS compliance.
> SPNovaLED are Class 1M LED products. Do not view directly with
optical instrument.
Applications:
> Automotive: exterior applications, eg: Center High Mounted
Stop Light (CHMSL), Rear Combination Lights (RCLs), Signal lightting, Fog-lamp, etc.
> Communication: indicator and backlight in mobilephone.
> Industry: white goods (eg: Oven, microwave, etc.).
> Lighting: garden light, architecture lighting, general lighting. etc
© 2005 SPNovaLED is a trademark of DOMINANT Semiconductors.
All rights reserved. Product specifications are subject to change without notice.
1
24/07/2007 V3.0
DOMINANT TM
InGaN White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Part Ordering
Number
NPW-TSD-ADE-1
Chip Technology
/ Color
Luminous Intensity @
IF = 350mA (mcd)
Viewing
Angle˚
120
InGaN
14000.0 - 22400.0
• NPW-TSD-AD
14000.0 - 18000.0
• NPW-TSD-AE
18000.0 - 22400.0
NOTE
1. Luminous intensity is measured with an accuracy of ± 11%.
2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel.
Electrical Characteristics at Ta=25˚C
Part Number
NPW-TSD
Vf @ If = 350mA
Typ. (V)
Max. (V)
3.6
4.0
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.
Material
Material
Lead-frame
Cu Alloy With Ag Plating
Package
High Temperature Resistant Plastic, PPA
Encapsulant
Silicone Resin
Soldering Leads
Sn-Sn Plating
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24/07/2007 V3.0
DOMINANT TM
InGaN White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Absolute Maximum Ratings
Maximum Value
Unit
DC forward current
350
mA
Peak pulse current
1000
mA
Not designed for reverse bias
V
ESD threshold (HBM)
2000
V
LED junction temperature
120
˚C
Operating temperature
-40 … +100
˚C
Storage temperature
-40 … +100
˚C
Reverse Voltage
Correlated Color Temperature (CCT)
Color Bin
Minimum CCT (K)
Maximum CCT (K)
Y3
4500
5000
Y2
5000
5500
Y1
5500
6000
X3
6000
7000
X2
7000
8000
X1
8000
10000
Note: CCT values provided for each of the color bins are an approximation based on correlation.
Correlation Between Luminous Intensity And Luminous Flux
IV Bin
Luminous Intensity (mcd)
Luminous Flux (lm)
Min
Max
Min
Max
AD
14000
18000
40.0
55.0
AE
18000
22400
55.0
70.0
Note: Data provided above is an approximation base on statistical correlation.
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24/07/2007 V3.0
DOMINANT TM
InGaN White High Lumens: 350 mA
Semiconductors
Innovating Illumination
Color Bin
White Bin Structure
0.44
•
0.42
0.40
0.38
0.36
0.34
0.32
0.30
•
0.28
0.26
X1
•
0.24
0.22
0.26
•
0.27
0.28
•
X2
X3
•
•
0.29
•
0.30
0.31
•
Y1
•
0.32
•
0.33
•
Y2
Y3
•
•
0.34
0.35
0.36
Chromaticity coordinate groups are measured with an accuracy of ± 0.01.
Bin
X1
X2
X3
Y1
Y2
Y3
Cx
1
2
3
4
0.278
0.290
0.290
0.278
0.288
Cy
0.243
0.265
0.310
Cx
0.290
0.303
0.303
0.290
0.310
Cy
0.265
0.286
0.331
Cx
0.303
0.315
0.315
0.303
0.331
Cy
0.286
0.308
0.353
Cx
0.315
0.328
0.328
0.315
0.353
Cy
0.308
0.330
0.375
Cx
0.328
0.340
0.340
0.328
0.375
Cy
0.330
0.351
0.396
Cx
0.340
0.353
0.353
0.340
0.373
0.418
0.396
Cy
0.351
4
24/07/2007 V3.0
DOMINANT TM
InGaN White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Relative Flux Vs Forward Current
1.4
Relative Flux; Normalized at 350mA
Relative Intensity; Normalized at 350mA
Relative Intensity Vs Forward Current
1.2
1
0.8
0.6
0.4
0.2
0
0
200
400
1.2
1
0.8
0.6
0.4
0.2
0
600
0
400
600
Forward Current, mA
Forward Current Vs Forward Voltage
Relative Spectral Emission
1
0.9
500
Relative Intensity
0.8
400
300
200
0.7
0.6
0.5
0.4
0.3
0.2
100
0.1
0
0
2
2.5
3
3.5
4
4.5
400
500
600
700
Wavelength, nm
Forward Voltage, V
Maximum
Permissible
Current
Maximum
Permissible
Pulse Pulse
Current,
Ta=25 ˚C
Forward Current Vs Ambient Temperature (Rja=40K/W)
400
1000
350
900
300
800
Pulse Current, mA
Forward Current, mA
200
Forward Current, mA
600
Forward Current, mA
1.4
250
200
150
100
700
600
500
400
300
50
200
0
0
10
20
30
40
50
60
70
80
90 100
1
10
100
Duty (%); Tp<=0.01 sec
Ambient Temperature
5
24/07/2007 V3.0
2
DOMINANT
Radiation Pattern
o
10 o
3.5
4
4.5
Forward Voltage, V
Innovating Illumination
20
3
InGaN White High Lumens : 350 mA
Semiconductors
30 o
2.5
TM
Forward Current Vs Solder Point Temperature
Forward Current Vs Temperature
0o
400
1.0
350
Forward Current, mA
40 o
0.8
0.6
50
o
60
o
70
o
80
o
90 o
0.4
0.2
300
250
200
150
100
50
0
0
0
20
40
60
80
100
SolderTemperature
Point Temperature
6
24/07/2007 V3.0
DOMINANT TM
InGaN White High Lumens : 350 mA
Semiconductors
Innovating Illumination
SPNovaLED • InGaN White High Lumens : 350 mA Package Outlines
TM
7
24/07/2007 V3.0
DOMINANT TM
InGaN White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Solder Pad Design
Note: Metal core circuit board (MCPCB) is highly recommended for applications.
Please consult sales and marketing for additional information.
8
24/07/2007 V3.0
DOMINANT TM
InGaN White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Taping and orientation
• Reels come in quantity of 2000 units.
• Reel diameter is 330 mm.
9
24/07/2007 V3.0
DOMINANT TM
InGaN White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Packaging Specification
10
24/07/2007 V3.0
DOMINANT TM
InGaN White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Packaging Specification
Moisture sensitivity level
Barcode label
DOMINANT Semiconductors
ROHS Compliant
LOT NO : lotno
PB Free
PART NO : partno
QTY : qty
S/N : xxx
D/C: xxxx
GROUP : group
Reel
Moisture absorbent material +
Moisture indicator
The reel, moisture absorbent material and moisture indicator are
sealed inside the moisture proof foil bag
Average 1pc SPNovaLED
1 completed bag (2000pcs)
0.188
0.034
800 ± 10
190
10
Weight
Weight(gram)
(gram)
Cardboard
Box
DOMINANT TM
Semiconductors
For SPNovaLED
Cardboard Box
Size
Large
TM
Dimensions (mm)
416 x 516 x 476
Empty Box
Weight (kg)
Reel / Box
1.74
20 reels MAX
11
Quantity / Box (pcs)
40,000 MAX
24/07/2007 V3.0
DOMINANT TM
InGaN White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Recommended Sn-Pb IR-Reflow Soldering Profile
Classification Reflow Profile (JEDEC J-STD-020C)
275
235-240˚C
10-30s
250
225
Ramp-up
3˚C/sec max.
Temperature (˚C)
200
175
183˚C
150
60-150s
125
Rampdown
6˚C/sec
max.
100
75
Preheat 60-120s
50
360s max
25
0
50
100
150
200
Recommended Pb-free Soldering Profile
Classification Reflow Profile (JEDEC J-STD-020C)
300
255-260˚C
10-30s
275
250
Temperature (˚C)
Ramp-up
3˚C/sec max.
217˚C
225
200
60-150s
175
150
125
Rampdown
6˚C/sec
max.
100
75
Preheat 60-180s
50
25
480s max
0
50
100
150
200
Time (sec)
12
24/07/2007 V3.0
DOMINANT TM
InGaN White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Revision History
Page
Subjects
Date of Modification
-
New Format & Add Maximum Permissible
Pulse Current Graph
24 Aug 2006
7
Change package drawing
30 May 2007
1
Update typical flux output to 60lm
24 July 2007
3
Update IV Vs Flux correlation table
24 July 2007
NOTE
All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT
Semiconductors does not assume any liability arising out of the application or use of any product described herein.
DOMINANT Semiconductors reserves the right to make changes at any time without prior notice to any products in order
to improve reliability, function or design.
DOMINANT Semiconductors products are not authorized for use as critical components in life support devices or systems
without the express written approval from the Managing Director of DOMINANT Semiconductors.
13
24/07/2007 V3.0
DOMINANT TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
About Us
DOMINANT Semiconductors is a dynamic Malaysian Corporation that is among the world’s leading SMT LED
Manufacturers. An excellence – driven organization, it offers a comprehensive product range for diverse industries
and applications. Featuring an internationally certified quality assurance acclaim, DOMINANT’s extra bright LEDs
are perfectly suited for various lighting applications in the automotive, consumer and communications as well as industrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art
manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More
information about DOMINANT Semiconductors can be found on the Internet at http://www.dominant-semi.com.
Please contact us for more information:
Head Quarter
DOMINANT Semiconductors Sdn. Bhd.
Lot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia
Tel: (606) 283 3566 Fax: (606) 283 0566
E-mail: sales@dominant-semi.com
DOMINANT China Sales Office
E-mail: sales_china@dominant-semi.com
DOMINANT Korea Sales Office
DOMINANT Semiconductors Korea Inc.
#709, Yatap Leaders Bldg., 342-1, Yatap-dong, Bundang-gu, Seongnam-si, Gyeonggi-do, 463-828 Korea.
Tel: 82-31-701-5203 Fax: 82-31-701-5204
E-mail: sales_korea@dominant-semi.com
DOMINANT
Semiconductors
Innovating Illumination
TM