DFM600BXS17-A000 Fast Recovery Diode Module PDS5798-1.2 June 2007 (LN25343) FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 1700V 2.0V 600A 1200A APPLICATIONS • Chopper Diodes • Boost and Buck Converters • Free-wheel Circuits • Snubber Circuit • Resonant Converters • Multi-level Switch Inverters The DFM600BXS17-A000 is a single 1700V, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Circuit diagram ORDERING INFORMATION Order As: DFM600BXS17-A000 Note: When ordering, please use the whole part number. Outline type code: B (See package details for further information) Fig. 2 Package Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1 /7 DFM600BXS17-A000 SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol VRRM Parameter Test Conditions Max. Units Repetitive peak reverse voltage Tvj = 125°C 1700 V IF Forward current DC, Tcase = 65°C, Tvj = 125°C 600 A IFM Max. forward current Tcase =110 °C, tp = 1ms 1200 A IFSM Surge (non-repetitive) forward current 3674 A I2 t I2t value fuse current rating VR = 0, tP = 10ms, Tvj = 125°C 67.5 kA2s Pmax Maximum power dissipation Tcase = 25°C, Tvj = 125°C 2000 W Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) Al2O3 Copper 20mm 11mm 425 Parameter Thermal resistance Test Conditions Continuous dissipation – Min. Typ. Max. Units - - 50 °C/kW - - 15 °C/kW junction to case Rth(c-h) Thermal resistance – case to heatsink Mounting torque 5Nm (with mounting grease) Tj Tstg - Junction temperature - - - 125 °C Storage temperature range - -40 - 125 °C 3 - 5 Nm 2.5 - 5 Nm Screw torque Mounting – M6 Electrical connections – M6 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 2 /7 DFM600BXS17-A000 SEMICONDUCTOR STATIC ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions Min. Typ. Max. Units - - 15 mA IRM Peak reverse current VR = 1200V, Tvj = 125°C VF Forward voltage IF = 600A 2.0 V IF = 600A, Tvj = 125°C 2.05 V LM Inductance - - 20 - nH Test Conditions Min. Typ. Max. Units DYNAMIC ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Parameter Symbol trr Reverse recovery time 1.4 µs IF = 600A, Irr Peak reverse recovery current - 345 - A - 150 - µC - 105 - mJ Min. Typ. Max. Units dIF/dt = 4500A/µs, Qrr Reverse recovery charge VR = 900V Erec Reverse recovery energy Tcase = 125°C unless stated otherwise. Symbol Parameter trr Reverse recovery time Irr Peak reverse recovery current Qrr Reverse recovery charge Erec Reverse recovery energy Test Conditions 2.0 IF = 600A, dIF/dt = 3800A/µs, VR = 900V - 330 - A - 255 - µC - 150 - mJ Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com µs 3 /7 DFM600BXS17-A000 SEMICONDUCTOR TYPICAL CHARACTERISTICS 1600 100 VF is measured at power busbars and not the auxiliary terminals 1400 Foward current, FI - (A) 1200 Transient thermal impedance,thZ(j-c) - (¡C/kW ) Diode Tj = 25ûC 1000 Tj = 125ûC 800 600 400 200 0 0 2.0 1.0 1.5 2.5 Foward voltage, V F - (V) 0.5 3.0 3.5 10 1 Diode 0.1 0.001 Ri (ûC/KW) i (ms) 0.01 Diode typical forward characteristics Fig.3 Diode typical forward characteristics 1 1.14 0.10 2 6.32 3.21 0.1 Pulse width, pt - (s) 3 18.56 38.58 4 22.51 113.97 10 1 Fig.4 Transient thermal impedance 2500 900 800 700 Forward current, FI - (A) Power dissipation - (W) 2000 1500 1000 600 500 400 300 500 200 100 0 0 25 50 75 Case temperature, cT- ¡C Fig.5 Power dissipation 100 125 0 0 25 50 75 Case temperature, cT- (¡C) 125 Fig.6 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 100 4 /7 DFM600BXS17-A000 SEMICONDUCTOR 800 Reverse recovery current, Irr - (A) 700 600 500 400 300 200 1000 Tj = 125ûC 0 0 400 1200 800 Reverse voltage, VR - (V) 1600 2000 Fig.7 RBSOA Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5 /7 DFM600BXS17-A000 SEMICONDUCTOR PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 475g Module outline type code: B Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 6 /7 DFM600BXS17-A000 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 /7