DYNEX DIM600DDM17-A000

DIM600DDM17-A000
DIM600DDM17-A000
Dual Switch IGBT Module
DS5596-1.1 April 2003
FEATURES
■
10µs Short Circuit Withstand
■
High Thermal Cycling Capability
■
Non Punch Through Silicon
■
Isolated MMC Base with AlN Substrates
KEY PARAMETERS
VCES
(typ)
VCE(sat) *
(max)
IC
(max)
IC(PK)
1700V
2.7V
600A
1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
■
High Reliability Inverters
■
Motor Controllers
■
Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM600DDM17-A000 is a dual switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This module is
optimised for traction drives and other applications requiring high
thermal cycling capability.
1(E1)
5(E1)
2(C2)
12(C2)
6(G1)
11(G2)
7(C1)
10(E2)
3(C1)
4(E2)
Fig. 1 Dual switch circuit diagram
5
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
6
3
1
4
2
7
8
ORDERING INFORMATION
9
Order As:
12
DIM600DDM17-A000
11
Note: When ordering, please use the complete part number.
10
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/10
DIM600DDM17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
1700
V
±20
V
Continuous collector current
Tcase = 75˚C
600
A
IC(PK)
Peak collector current
1ms, Tcase = 110˚C
1200
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
5200
W
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
120
kA2s
Visol
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
4000
V
QPD
Partial discharge - per module
IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS
10
pC
IC
I2t
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DDM17-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Test Conditions
Parameter
Symbol
Rth(j-c)
AlN
AlSiC
20mm
10mm
175
Thermal resistance - transistor (per arm)
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
27
˚C/kW
-
-
40
˚C/kW
-
-
8
˚C/kW
junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
Mounting - M6
-
-
5
Nm
Electrical connections - M4
-
-
2
Nm
Electrical connections - M8
-
-
10
Nm
-
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/10
DIM600DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
20
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
4
µA
VGE(TH)
Gate threshold voltage
IC = 30mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 600A
-
2.7
3.2
V
VGE = 15V, IC = 600A, , Tcase = 125˚C
-
3.4
4.0
V
Symbol
ICES
IGES
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC
-
-
600
A
IFM
Diode maximum forward current
tp = 1ms
-
-
1200
A
VF†
Diode forward voltage
IF = 600A
-
2.0
2.3
V
IF = 600A, Tcase = 125˚C
-
2.1
2.4
V
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
45
-
nF
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
3.8
-
nF
LM
Module inductance - per arm
-
-
20
-
nH
Internal transistor resistance - per arm
-
-
0.27
-
mΩ
RINT
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 1000V,
I1
-
2780
-
A
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt
I2
-
2400
-
A
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + LM
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 600A
-
1200
-
ns
Fall time
VGE = ±15V
-
140
-
ns
EOFF
Turn-off energy loss
VCE = 900V
-
190
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 3.3Ω
-
250
-
ns
L ~ 100nH
-
250
-
ns
Symbol
td(off)
tf
tr
Parameter
Turn-off delay time
Rise time
Test Conditions
EON
Turn-on energy loss
-
220
-
mJ
Qg
Gate charge
-
6.8
-
µC
Qrr
Diode reverse recovery charge
IF = 600A,
-
150
-
µC
Irr
Diode reverse recovery current
VR = 50% VCES,
-
350
-
A
Erec
Diode reverse recovery energy
dIF/dt = 3000A/µs
-
100
-
mJ
Test Conditions
Min.
Typ.
Max.
Units
IC = 600A
-
1500
-
ns
Fall time
VGE = ±15V
-
170
-
ns
EOFF
Turn-off energy loss
VCE = 900V
-
270
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 3.3Ω
-
400
-
ns
L ~ 100nH
-
250
-
ns
-
350
-
mJ
ELECTRICAL CHARACTERISTICS
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
IF = 600A,
-
250
-
µC
Irr
Diode reverse recovery current
VR = 50% VCES,
-
400
-
A
Erec
Diode reverse recovery energy
dIF/dt = 3000A/µs
-
150
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5/10
DIM600DDM17-A000
TYPICAL CHARACTERISTICS
1200
1200
Common emitter.
1100 Tcase = 25˚C
Common emitter.
1100 Tcase = 125˚C
Vce is measured at power busbars
Vce is measured at power busbars
1000 and not the auxiliary terminals
1000 and not the auxiliary terminals
900
Collector current, IC - (A)
Collector current, IC - (A)
900
800
700
600
500
400
300
700
600
500
400
300
VGE = 20V
15V
12V
10V
200
100
0
0
800
0.5
1
1.5
2
2.5
3
3.5
4
VGE = 20V
15V
12V
10V
200
100
4.5
0
5
0
0.5
1
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
6
800
Conditions:
Vce = 900V
400 T = 125°C
c
Rg = 3.3 Ohms
Conditions:
Vce = 900V
IC = 600A
Tc = 125°C
350
600
Switching energy - (mJ)
Switching energy - (mJ)
5.5
Fig. 4 Typical output characteristics
450
300
250
200
150
400
200
100
Eon
Eoff
Erec
50
0
0
200
400
600
Collector current, IC - (A)
800
1000
Fig. 5 Typical switching energy vs collector current
6/10
1.5 2 2.5 3 3.5 4 4.5 5
Collector-emitter voltage, Vce - (V)
Eon
Eoff
Erec
0
0
2
4
6
8
Gate Resistance, Rg - (Ohms)
10
12
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DDM17-A000
1600
2000
Tj = 25˚C
Tj = 125˚C
1800
1400 VF is measured at power busbars
and not the auxiliary terminals
1600
Collector current, IC - (A)
Foward current, IF - (A)
1200
1000
1400
1200
Chip
1000
800
600
800
Module
600
400
400
Tcase = 125˚C
200 Vge = ±15V
Rg(min) = 3.3Ω
0
1200
0
400
800
1600
Collector-emitter voltage, Vce - (V)
200
0
0
0.5
2.0
1.0
1.5
2.5
Foward voltage, VF - (V)
3.0
3.5
Fig. 7 Diode typical forward characteristics
2000
Fig. 8 Reverse bias safe operating area
1200
800
700
1000
DC collector current, IC - (A)
Reverse current, IR - (A)
600
500
400
300
200
100
800
600
400
200
Tj = 125˚C
0
0
400
1200
800
Reverse voltage, VR - (V)
1600
Fig. 9 Diode reverse bias safe operating area
2000
0
0
20
40
60
80
100
Case temperature, Tcase - (˚C)
140
Fig. 10 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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120
7/10
DIM600DDM17-A000
100
Transient thermal impedance, Zth (j-c) - (°C/kW )
Diode
Transistor
10
1
IGBT
Diode
0.1
0.001
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
0.01
1
0.74
0.12
1.23
0.11
2
5.34
3.89
9.26
4.24
0.1
Pulse width, tp - (s)
3
7.52
47.15
12.96
48.75
1
4
10.42
257.21
16.53
256.75
10
Fig. 11 Transient thermal impedance
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600DDM17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
62
62
13
15
15
5
1
4
2
11.85
3
57
24
65
6
16
7
9
13
26
12
43.3
57
65
18
8
11
10
14 11.5
20
35
6x Ø7
4x M8
38
28
31.5
6x M4
5
140
Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3
Auxiliary and Gate pin plastic hole depth (M4) = 9 ± 0.3
Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1
Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1
Nominal weight: 1050g
Module outline type code: D
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9/10
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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