DIM600NSM45-F000
Single Switch IGBT Module
DS5873-1.2 August 2006
FEATURES
•
10µs Short Circuit Withstand
•
Soft Punch Through Silicon
•
Lead Free construction
•
Isolated MMC Base with AlN Substrates
•
High Thermal Cycling Capability
KEY PARAMETERS
V CES
V CE(sat) *
(typ)
IC
(max)
I C(PK)
(max)
(LN24760)
4500V
2.9 V
600A
1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
•
High Reliability Inverters
•
Motor Controllers
•
Traction Drives
•
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 600V to
6500V and currents up to 3600A.
The DIM600NSM45-F000 is a single switch 4500V,
soft punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus 10us short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
Fig. 1 Single switch circuit diagram
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM600NSM45-F000
Note: When ordering, please use the complete part
number
Outline type code: N
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
1/8
DIM600NSM45-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25°C unless stated otherwise
Symbo
l
VCES
Parameter
Test Conditions
Max.
Units
Collector-emitter voltage
4500
V
VGES
Gate-emitter voltage
±20
V
IC
Continuous collector current
Tcase =100 °C
600
A
IC(PK)
Peak collector current
1ms, Tcase=115 °C
1200
A
Pmax
Tcase =25 °C, T j =150 °C
10.4
kW
Visol
Max.transistor power
dissipation
Isolation voltage-per module
6000
kV
QPD
Partial discharge-per module
Commoned terminals to base plate. AC RMS,1
min,50Hz
IEC1287.V1 =3750V, V2 =2750V, 50Hz RMS
10
pC
Typ.
Max
Units
-
12
°C/kW
-
24
°C/kW
-
8
°C/kW
VGE =0V
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
29mm
Clearance:
20mm
CTI (Critical Tracking Index)
175
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
Parameter
Thermal resistance -transistor (per
switch)
Thermal resistance -diode (per
switch)
Thermal resistance -case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
2/8:
Test Conditions
Min
Continuous dissipation junction to case
Continuous dissipation junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
-
-
150
°C
Diode
-
-
125
°C
-40
-
125
°C
Mounting M6
-
-
5
Nm
Electrical connections M4
Electrical connections M8
-
-
2
Nm
-
-
10
Nm
-
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600NSM45-F000
ELECTRICAL CHARACTERISTICS
T case = 25°C unless stated otherwise.
Symbo
l
ICES
Parameter
Collector cut-off current
Test Conditions
Min
Typ
VGE =0V,VCE =VCES
VGE =0V,VCE =VCES ,Tcase =125 °C
Max
Units
1
mA
60
mA
8
uA
7.0
V
IGES
Gate leakage current
VGE = 20V,VCE =0V
VGE(TH)
Gate threshold voltage
IC =80mA,VGE =VCE
Collector-emitter saturation
voltage
VGE =15V,IC =600A
2.9
V
VGE =15V,IC =600A,TVJ =125 °C
3.5
V
VCE(sat)
†
IF
Diode forward current
DC
IFM
Diode maximum forward
current
Diode forward voltage
tp =1ms
VF
5.5
6.5
600
A
1200
A
IF =600A
3.0
V
IF =600A,TVJ =125 °C
3.1
V
Cies
Input capacitance
VCE =25V,VGE =0V,f =1MHz
132
nF
Cres
Reverse transfer capacitance
VCE =25V,VGE =0V,f =1MHz
1.8
nF
LM
Module inductance
15
nH
RINT
Internal transistor resistance
135
µΩ
SCData
Short circuit.I SC
Tj ≤125 °C,V CC ≤3000V,
I1
2800
A
t p =10 us,
VCE(max) = VCES – L*.di/dt
IEC 60747-9
I2
2500
A
Note:
†
Measured at the power busbars and not the auxiliary terminals
*
L is the circuit inductance + L M
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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3/8
DIM600NSM45-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
tf
Test Conditions
Min
Typ.
Max
Units
IC =600A
5.0
us
Fall time
VGE =±15V
250
ns
EOFF
Turn-off energy loss
VCE =2250V
1500
mJ
td(on)
Turn-on delay time
850
ns
tr
Rise time
RG(ON) =4.7Ω
RG(OFF)=11Ω
Cge =110nF
220
ns
EON
Turn-on energy loss
L ~200nH
1800
mJ
Qg
Gate charge
20
uC
Qrr
Diode reverse recovery
charge
Diode reverse recovery
current
Diode reverse recovery
energy
IF =600A,VCE =2250V,
475
uC
dIF/dt =3000A/us
700
A
600
mJ
Irr
Erec
Tcase = 125°C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
tf
Test Conditions
Min
Typ.
Max
Units
IC =600A
5.2
us
Fall time
VGE =±15V
250
ns
EOFF
Turn-off energy loss
VCE =2250V
1700
mJ
td(on)
Turn-on delay time
800
ns
tr
Rise time
RG(ON) =4.7Ω
RG(OFF)=11Ω
Cge =110nF
220
ns
EON
Turn-on energy loss
L ~200nH
2700
mJ
Qrr
Diode reverse recovery
charge
Diode reverse recovery
current
Diode reverse recovery
energy
IF =600A,VCE =2250V,
850
uC
dIF/dt =3000A/us
820
A
1050
mJ
Irr
Erec
4/8:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600NSM45-F000
1200
1000
1000
800
Collector current, Ic - (A)
Collector current, Ic - (A)
1200
Common emitter
Tcase = 25° C
VCE is measured at power busbars
and not the auxiliary terminals
600
Vge=10V
Vge=12V
Vge=15V
Vge=20V
400
200
800
600
400
Vge=10V
Vge=12V
Vge=15V
Vge=20V
200
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4.5
0.0
1.0
2.0
3.0
4.0
Collector-emitter voltage, Vce - (V)
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
3000
2000
Conditions:
VCC = 2250V
Ic = 600A
Tcase = 125° C
Cge =110nF
Vge = +/- 15V
Eoff (mJ)
7000
Erec (mJ)
Switching Energy - Esw (mJ)
Conditions:
VCC = 2250V
Tcase = 125° C
Rg = 4.7Ohms
Cge =110nF
Vge =+/- 15V
5.0
8000
Eon (mJ)
Switching Energy - Esw (mJ)
Common emitter
Tcase = 125° C
VCE is measured at power busbars
and not the auxiliary terminals
1000
6000
5000
Eon (mJ)
Eoff (mJ)
Erec (mJ)
4000
3000
2000
1000
0
0
200
400
600
Collector Current - Ic (A)
0
0
5
10
15
20
25
30
Gate Resistance - Rg (Ohms)
Fig.5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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5/8
DIM600NSM45-F000
1200
1400
25ºC
125ºC
1200
VF is measured at power busbars
and not the auxiliary terminals
1000
Collector current, Ic (A)
Forward Current IF - ( A)
1000
800
600
400
Module
800
600
Tcase = 125'C
Vge = +/-15V
Rg(off) =11ohms
400
200
200
0
4000
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Forward voltage, VF - (V)
4400
4600
4800
5000
Fig. 8 Reverse bias safe operating area
100
Transient thermal impedance, Zth(j-c) - ('C/kW)
1000
900
Reverse recoery current, I rr-(A)
4200
Collector emitter voltage, Vce (V)
Fig. 7 Diode typical forward characteristics
800
Tj = 125º C
700
600
500
400
300
200
Rth IGBT
Rth diode
10
1
0.001
0.01
0.1
1
10
Pulse time, tp - (s)
100
0
0
1000
2000
3000
4000
5000
Reverse voltage, VR -(V)
Fig. 9 Diode reverse bias safe operating area
6/8:
Chip
IG B T
D io d e
R i ( °C /k W )
ti (m s )
R i ( °C /k W )
ti (m s )
1
0 .4 6
0 .1 7
0 .9 0
0 .1 7
2
2 .1 0
8 .0 8
4 .2 2
8 .0 8
3
3 .6 4
5 1 .9 2
7 .2 8
5 1 .9 2
4
5 .8 6
2 8 0 .5
1 1 .7 1
2 8 0 .5
Fig. 10 Transient thermal impedance
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600NSM45-F000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
Fig. 11 Module outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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7/8
DIM600NSM45-F000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the
basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in
device voltages and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general
use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy
the growing needs of our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Fax: +44(0)1522 500550
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Tel: +44(0)1522 500500
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as
follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification.
No
actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may
change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade
names of their respective owners.
8/8:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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