APTGT75DH120T3G Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module 13 14 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Q1 CR1 CR3 18 22 7 23 8 19 Q4 CR2 CR4 4 3 30 29 31 15 32 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 Features • Fast Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • • • • 16 R1 28 27 26 25 VCES = 1200V IC = 75A @ Tc = 80°C Kelvin emitter for easy drive Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS Compliant 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 150A @ 1150V TC = 25°C TC = 80°C TC = 25°C Unit V April, 2009 IC Max ratings 1200 110 75 175 ±20 357 RBSOA Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT75DH120T3G – Rev 1 Symbol VCES APTGT75DH120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V 1.4 Typ 1.7 2.0 5.0 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE=±15V, IC=75A VCE=600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A RG = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 75A RG = 4.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 75A Tj = 125°C RG = 4.7Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Typ 5340 280 240 pF 0.7 µC 260 30 ns 420 70 285 50 ns 520 90 7 mJ 8.1 300 A Diode ratings and characteristics (CR2 & CR3) IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ V VR=1200V Tj = 25°C Tj = 125°C IF = 75A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 75 1.6 1.6 170 Tj = 125°C Tj = 25°C 280 7 Tj = 125°C Tj = 25°C Tj = 125°C 14 3 5.5 IF = 75A VR = 600V di/dt =2000A/µs Unit 250 500 µA A 2.1 V April, 2009 VRRM Test Conditions ns µC mJ CR1 & CR4 are IGBT protection diodes only www.microsemi.com 2-5 APTGT75DH120T3G – Rev 1 Symbol Characteristic APTGT75DH120T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To Heatsink M5 2500 -40 -40 -40 2.5 Max 0.35 0.58 Unit °C/W V 150 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT75DH120T3G – Rev 1 28 17 1 April, 2009 SP3 Package outline (dimensions in mm) APTGT75DH120T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 150 150 TJ = 125°C 125 TJ=25°C 100 75 50 50 25 25 VGE=15V VGE=9V 0 0 1 2 VCE (V) 3 0 4 1 17.5 TJ=25°C 125 3 4 VCE = 600V VGE = 15V RG = 4.7Ω TJ = 125°C 15 12.5 TJ=125°C E (mJ) 100 2 VCE (V) Energy losses vs Collector Current Transfert Characteristics 150 75 10 Eoff Eon 7.5 50 5 25 2.5 Er 0 0 5 6 7 8 9 10 11 0 12 25 Switching Energy Losses vs Gate Resistance 16 VCE = 600V VGE =15V IC = 75A TJ = 125°C 14 12 75 100 125 150 Reverse Bias Safe Operating Area 175 Eon 150 125 Eoff IC (A) 10 50 IC (A) VGE (V) E (mJ) VGE=13V 75 0 IC (A) VGE=17V TJ=125°C 100 IC (A) IC (A) 125 8 6 100 Er 75 4 50 2 25 0 VGE=15V TJ=125°C RG=4.7Ω 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.9 0.3 0.7 0.25 April, 2009 0.35 0.5 0.2 0.15 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT75DH120T3G – Rev 1 Thermal Impedance (°C/W) 0.4 APTGT75DH120T3G Forward Characteristic of diode 150 VCE=600V D=50% RG=4.7Ω TJ=125°C 50 40 100 Tc=75°C 30 ZCS TJ=25°C 125 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 ZVS TJ=125°C 75 50 20 10 TJ=125°C 25 Hard switching 0 0 0 20 40 60 80 100 0 120 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 Diode 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT75DH120T3G – Rev 1 April, 2009 rectangular Pulse Duration (Seconds)