TVR30 HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE - TVR30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for black / white TV and similar service. ABSOLUTE MAXIMUM RATINGS Peak Reverse Voltage - Repetitive VRWM max. 30,000 Volts * Average Forward Current IF(AV)max. 10 mA * Peak Forward Current - Repetitive IFRM max. 200 mA TA +100 oC TSTG -55 oC to +150 oC ** Operating Temperature Storage Temperature Range *Pulse rectifier service -TV deflection system, duty cycle approximately 15% of one horizontal cycle. Approximately 10 sec at a repetition rate of 15,750 Hz **See Figure 2 (over) ELECTRICAL CHARACTERISTICS (@ TA=25 o C, Unless Otherwise indicated.) Forward Voltage VF @IF =5 mA 45V max. * Reverse Current IR @ VR =30KV 1uA max. * o Reverse Current @ TA = 100 C, IR @ VR =30KV Reverse Recovery time (Fig.3) t rr Max. Surge Current 10uA max. 100 nanosec max. 3A * Tested in suitable dielectric medium EDI reserves the right to change these specifications at any time without notice. TVR 30 FIG.1 TYPICAL APPLIED VOLTAGE FIG.2 TYPICAL OPERATING CIRCUIT S 63.5 2500pF DC OUT RL TV FLYBACK XFMR AC AXIS OVERSHOOT V RM =DC OUT + OVERSHOOT FIG.3 REVERSE RECOVERY TEST METHOD 1000 NI Trr D.U.T. + 0.1 I F=2MA 50 NI PULSE * GENERATOR SCOPE I RR=1MA I R=5MA CIRCUIT WAVE FORMS *PULSE GENERATOR HP 214 A OR EQUIV. PULSE WIDTH 1 S REP.RATE 10 HKZ FIG.4 MECHANICAL OUTLINE A LEAD DIA. D B C MIN. A B C D INCHES .020 1.5 0.5 .235 MM 0.5 1 38.1 12.7 5.9 7 Notes: 1.molding material rated UL94V-0 O 2.max.lead temperature for soldering, 1/8 ’’ from body,10seconds @260 C ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951. 21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 Ee-mail:[email protected] * Wwebsite: http://www.edidiodes.com * FAX 914-965-5531 * 1-800-678-0828