TI TS3DS26227YZTR

TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
•
•
•
•
High-Bandwidth Data Paths – Up to 800 MHz
Specified Break-Before-Make Switching
Control Inputs Reference to VIO
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
2.3-V to 3.6-V Power Supply (V+)
1.65-V to 1.95-V Logic Supply (VIO)
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 4000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
– 200-V Machine Model (A115-A)
Cell Phones
PDAs
Portable Instrumentation
Low-Voltage Differential Signal Routing
YZT PACKAGE
(BOTTOM THROUGH VIEW)
A B C D
1
3
4
9
10
2
2
5
8
11
3
1
6
7
12
A
B
1
IN1
NO1
COM1 NC1
2
VIO
IN2
GND
GND
V+
COM2 NC2
3
NO2
C
D
DESCRIPTION/ORDERING INFORMATION
The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from
2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal
distortion during the transferring of a signal from one path to another. The device has excellent total harmonic
distortion (THD) performance and consumes very low power. These features make this device suitable for
portable applications.
The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the
control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals.
ORDERING INFORMATION
TA
–40°C to 85°C
(1)
(2)
PACKAGE (1) (2)
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZT (Pb-free)
0625-mm max height
ORDERABLE PART NUMBER
Tape and reel
TS3DS26227YZTR
TOP-SIDE MARKING
267
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
YZT: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following
character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoFree is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006, Texas Instruments Incorporated
TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
SCDS234 – SEPTEMBER 2006
SUMMARY OF CHARACTERISTICS (1)
Dual 2:1
Multiplexer/Demultiplexer
(2 × SPDT)
Configuration
Number of channels
2
5 Ω max
ON-state resistance (ron)
0.1 Ω max
ON-state resistance match (∆ron)
ON-state resistance flatness [ron(flat)]
3 Ω max
Turn-on/turn-off time (tON/tOFF)
9 ns/4 ns
Break-before-make time (tBBM)
8 ns
Charge injection (QC)
5.5 pC
Bandwidth (BW)
800 MHz
OFF isolation (OISO)
–40 dB
Crosstalk (XTALK)
–39 dB
Leakage current [INO(OFF)/INC(OFF)]
±5 nA
±20 nA
Power-supply current (I+)
Package options
(1)
12-bump WCSP
V+ = 2.7 V, TA = 25°C
FUNCTION TABLE
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
L
ON
OFF
H
OFF
ON
IN
2
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TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
Absolute Maximum Ratings
(1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
Supply voltage range (3)
–0.5
4.6
V
VNC
VNO
VCOM
Analog voltage range (3) (4) (5)
–0.5
V+ + 0.5
V
IK
Analog port diode current
VNC, VNO, VCOM < 0, or VNC,
VNO, VCOM > V+ + 0.5
–50
50
INC
INO
ICOM
On-state switch current
VNC, VNO, VCOM = 0 to V+
–64
64
–100
100
VI
Digital input voltage range
–0.5
VIO + 0.5
IIK
Digital input clamp current (3) (4)
–50
50
mA
I+
IGND
Continuous current through V+ or GND
–100
100
mA
TBD
°C/W
150
°C
V+
VIO
On-state peak switch
current (6)
θJA
Package thermal
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
VI < 0, or VI > VIO + 0.5
impedance (7) (8)
–65
UNIT
mA
mA
V
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Requires clamp diodes on analog port to V+
Pulse at 1-ms duration <10% duty cycle
The package thermal impedance is calculated in accordance with JESD 51-7.
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TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
Electrical Characteristics for 3.3-V Supply (1)
V+ = 2.7 V to 3.6 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Analog Switch
Analog signal range
VCOM,
VNO,
VNC
ON-state resistance
ron
ON-state resistance
match between channels
∆ron
0
0 ≤ (VNO or VNC) ≤ 1.6 V,
ICOM = –10 mA,
Switch ON,
See Figure 13
25°C
VNO or VNC = 1.6 V,
ICOM = –10 mA,
Switch ON,
See Figure 13
25°C
0 ≤ (VNO or VNC) ≤ 1.6 V,
ICOM = –10 mA,
Switch ON,
See Figure 13
25°C
Switch OFF,
See Figure 14
ON-state resistance
flatness
ron(flat)
NC, NO
OFF leakage current
INO(OFF),
INC(OFF)
VNO or VNC = 0.3 V,
VCOM = 3 V,
or
VNO or VNC = 3 V,
VCOM = 0.3 V,
INO(ON),
INC(ON)
VNO or VNC = 0.3 V,
VCOM = Open,
or
VNO or VNC = 3 V,
VCOM = Open,
Switch ON,
See Figure 15
ICOM(ON)
VNO or VNC = Open,
VCOM = 0.3 V,
or
VNO or VNC = Open,
VCOM = 3 V,
Switch ON,
See Figure 15
NC, NO
ON leakage current
COM
ON leakage current
Full
Full
Full
Full
2
0.1
–15
0.2
Ω
Ω
Ω
nA
10
30
0.2
Ω
5
15
–30
–10
3.6 V
3
4
–10
3.6 V
0.1
0.2
–5
25°C
Full
0.05
2.7 V
3.6 V
5
6
2.7 V
25°C
Full
3.5
2.7 V
25°C
V+
nA
10
–30
30
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
VIO = 1.65 V to 1.95 V
Full
0.65
× VIO
VIO
V
Input logic low
VIL
VIO = 1.65 V to 1.95 V
Full
0
0.35
× VIO
V
Input leakage current
(1)
(2)
4
IIH, IIL
VIN = VIO or 0
25°C
Full
3.6 V
–2
–10
0.1
2
10
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at VIO or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
Electrical Characteristics for 3.3-V Supply (continued)
V+ = 2.7 V to 3.6 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Dynamic
25°C
3.3 V
1
Full
2.7 to
3.6 V
1
25°C
3.3 V
1
Full
2.7 to
3.6 V
1
25°C
3.3 V
0.5
Full
2.7 to
3.6 V
0.5
CL = 1 nF,
See Figure 22
25°C
3.3 V
5.5
pC
VNC or VNO = 1.3 V or GND,
Switch OFF,
See Figure 16
25°C
3.3 V
3.5
pF
CNC(ON),
CNO(ON)
VNC or VNO = 1.3 V or GND,
Switch ON,
See Figure 16
25°C
3.3 V
10.5
pF
CCOM(ON)
VCOM = 1.3 V or GND,
Switch ON,
See Figure 16
25°C
3.3 V
10.5
pF
VI = V+ or GND,
See Figure 16
25°C
3.3 V
2
pF
See Figure 19
25°C
2.7 V
800
MHz
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Break-before-make time
tBBM
VNC = VNO = 0.6 V,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Charge injection
QC
VGEN = 0,
RGEN = 0,
NC, NO
OFF capacitance
CNC(OFF),
CNO(OFF)
NC, NO
ON capacitance
COM
ON capacitance
Digital input capacitance
CI
6.5
9
11.5
2
4
5
4
ns
ns
8
9
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
OFF isolation
OISO
RL = 50 Ω,
f = 200 MHz,
Switch OFF,
See Figure 20
25°C
2.7 V
–40
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 200 MHz,
Switch ON,
See Figure 21
25°C
2.7 V
–39
dB
Supply
Positive supply current
I+
VI = V+ or GND,
Switch ON or OFF
Logic supply current
IIO
VI = VIO or GND,
Switch ON or OFF
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25°C
Full
25°C
Full
3.6 V
3.6 V
–20
1
–500
–10
–200
20
500
1
10
200
nA
nA
5
TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
Electrical Characteristics for 2.5-V Supply (1)
V+ = 2.3 V to 2.7 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Analog Switch
Analog signal range
VCOM,
VNO,
VNC
ON-state resistance
ron
ON-state resistance
match between channels
∆ron
0
0 ≤ (VNO or VNC) ≤ 1.3 V,
ICOM = –10 mA,
Switch ON,
See Figure 13
25°C
VNO or VNC = 1.3 V,
ICOM = –10 mA,
Switch ON,
See Figure 13
25°C
0 ≤ (VNO or VNC) ≤ 1.3 V,
ICOM = –10 mA,
Switch ON,
See Figure 13
25°C
Switch OFF,
See Figure 14
ON-state resistance
flatness
ron(flat)
NC, NO
OFF leakage current
INO(OFF),
INC(OFF)
VNO or VNC = 0.2 V,
VCOM = 2.3 V,
or
VNO or VNC = 2.3 V,
VCOM = 0.2 V,
INO(ON),
INC(ON)
VNO or VNC = 0.2 V,
VCOM = Open,
or
VNO or VNC = 2.3 V,
VCOM = Open,
Switch ON,
See Figure 15
ICOM(ON)
VNO or VNC = Open,
VCOM = 0.2 V,
or
VNO or VNC = Open,
VCOM = 2.3 V,
Switch ON,
See Figure 15
NC, NO
ON leakage current
COM
ON leakage current
Full
Full
Full
Full
2.5
0.1
–15
0.2
Ω
Ω
Ω
nA
5
20
0.05
Ω
5
15
–20
–1
2.7 V
4
4.5
–5
2.7 V
0.1
0.2
–5
25°C
Full
0.05
2.3 V
2.7 V
5.5
7
2.3 V
25°C
Full
4
2.3 V
25°C
V+
nA
1
–10
10
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
VIO = 1.65 V to 1.95 V
Full
0.65
× VIO
VIO
V
Input logic low
VIL
VIO = 1.65 V to 1.95 V
Full
0
0.35
× VIO
V
Input leakage current
(1)
(2)
6
IIH, IIL
VIN = VIO or 0
25°C
Full
2.7 V
–1
–10
0.05
1
10
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at VIO or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
Electrical Characteristics for 2.5-V Supply (continued)
V+ = 2.3 V to 2.7 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Dynamic
25°C
2.5 V
1
Full
2.3 to
2.7 V
1
25°C
2.5 V
1
Full
2.3 to
2.7 V
1
25°C
2.3 V
1
Full
2.3 to
2.7 V
1
CL = 1 nF
See Figure 22
25°C
2.5 V
4
pC
VNC or VNO = 1.6 V or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
3.5
pF
CNC(ON),
CNO(ON)
VNC or VNO = 1.6 V or GND,
Switch ON,
See Figure 16
25°C
2.5 V
10.5
pF
CCOM(ON)
VCOM = 1.6 V or GND,
Switch ON,
See Figure 16
25°C
2.5 V
10.5
pF
VI = V+ or GND,
See Figure 16
25°C
2.5 V
2
pF
See Figure 19
25°C
2.3 V
800
MHz
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Break-before-make time
tBBM
VNC = VNO = 0.6 V,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Charge injection
QC
VGEN = 0,
RGEN = 0,
NC, NO
OFF capacitance
CNC(OFF),
CNO(OFF)
NC, NO
ON capacitance
COM ON capacitance
Digital input capacitance
CI
7
11
13
2.5
4.5
5.5
4
ns
ns
8
10
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
OFF isolation
OISO
RL = 50 Ω,
f = 200 MHz,
Switch OFF,
See Figure 20
25°C
2.3 V
–40
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 200 MHz,
Switch ON,
See Figure 21
25°C
2.3 V
–39
dB
Supply
Positive supply current
I+
VI = V+ or GND,
Switch ON or OFF
Logic supply current
IIO
VI = VIO or GND,
Switch ON or OFF
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25°C
Full
25°C
Full
2.7 V
2.7 V
–10
1
–350
–5
–200
10
350
1
5
200
nA
nA
7
TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
TYPICAL CHARACTERISTICS
70
80
60
70
60
50
TA = -40°C
rON (W)
rON (W)
40
30
TA = 25°C
TA = -40°C
50
40
TA = 25°C
30
20
20
TA = 85°C
10
TA = 85°C
10
0
0
0
0.5
1
1.5
0.5
0
2
1
1.5
Figure 1. ron vs VI (NC, NO, or COM) (V+ = 2.3 V)
18
16
4
85°C NC ON
14
3
85°C NC OFF
2
1
TA = 85°C
12
ICC (nA)
Leakage (nA)
3
Figure 2. ron vs VI (NC, NO, or COM) (V+ = 2.7 V)
5
25°C NC ON
0
10
8
6
TA = -40°C
4
TA = 25°C
2
-1
-40°C NC ON
-2
-0.5
0
0.5
1
25°C NC OFF
1.5
2
2.5
3
0
3.5
-2
-0.5
4
0
0.5
1
Figure 3. Analog Switch Leakage Current vs VI (NC, NO,
or COM) (V+ = 3.6 V)
3
3.5
9
1.8 V NC1–COM1
NC2–COM2
NO1–COM1
NO2–COM2
4
2.5
2
Figure 4. I+ Supply Current vs V+
8
6
1.5
Voltage (V)
Voltage (V)
ton
8
7
2
6
ton/toff (ns)
Charge Injection
2.5
VIN (V)
VIN (V)
0
3V
-2
NC1–COM1
NC2–COM2
NO1–COM1
NO2–COM2
-4
-6
5
4
toff
3
2
1
-8
0
-10
0
0.5
1
1.5
2
2.5
3
2.3
2.5
2.7
2.9
3.1
VCC (V)
Voltage (V)
Figure 5. Charge Injection vs VCOM
8
2
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Figure 6. ton/toff vs V+
3.3
3.5
4
TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
TYPICAL CHARACTERISTICS (continued)
9
0
ton
8
-1
7
-2
Gain (dB)
ton/toff (ns)
6
5
4
toff
3
-3
-4
-5
2
-6
1
-7
0
-60
-8
-40
-20
0
20
40
60
80
100
0
1
Temperature (°C)
100
1000
10000
Figure 8. Bandwidth (V+ = 2.5 V)
0
0
-20
-20
-40
-40
Gain (dB)
Gain (dB)
Figure 7. ton/toff vs Temperature (V+ = 2.3 V)
-60
-60
-80
-80
-100
-100
-120
-120
0
1
10
1000
100
0
10000
1
10
1000
100
10000
Frequency (MHz)
Frequency (MHz)
Figure 9. OFF Isolation vs Frequency (V+ = 2.5 V)
Figure 10. Crosstalk vs Frequency (V+ = 2.5 V)
1.6
1.6
1.4
1.4
1.2
1.2
Rise
1
Fall
0.8
Rise
1
VOUT (V)
VOUT (V)
10
Frequency (MHz)
0.6
0.4
Fall
0.8
0.6
0.4
0.2
0.2
0
0
-0.2
-0.5
-0.2
-0.5
0
0.5
1
1.5
2
VIN (V)
0
0.5
1
1.5
2
VIN (V)
Figure 11. Threshold Voltage (VIO = 1.8 V, V+ = 2.7 V)
Figure 12. Threshold Voltage (VIO = 1.8 V, V+ = 3.6 V)
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TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
PARAMETER MEASUREMENT INFORMATION
V+
VNO NO
COM
+
VCOM
Channel ON
r on +
VI
ICOM
IN
VCOM * VNO
W
I COM
VI = VIH or VIL
+
GND
Figure 13. ON-State Resistance (ron)
V+
VNO NO
COM
+
VCOM
+
VI
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
+
GND
Figure 14. OFF-State Leakage Current (ICOM(OFF), INC(OFF), ICOM(PWROFF), INC(PWROFF))
V+
VNO NO
COM
+
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 15. ON-State Leakage Current (ICOM(ON), INC(ON))
10
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TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V+
VNO
NO
Capacitance
Meter
VBIAS = 1.3 V, 1.6 V, or GND and
VI = VIO or GND
COM
COM
VI
IN
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
VBIAS
GND
Figure 16. Capacitance (CI, CCOM(OFF), CCOM(ON), CNC(OFF), CNC(ON))
V+
NO
VCOM
VI
Logic
Input(1)
VNO
TEST
RL
CL
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
COM
CL(2)
IN
GND
RL
VIO
Logic
Input
(VI)
50%
50%
0
tON
Switch
Output
(VNO)
(1)
(2)
VCOM
tOFF
90%
90%
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
Figure 17. Turn-On (tON) and Turn-Off Time (tOFF)
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11
TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V+
Logic
Input
(VI)
VNC or VNO
NC or NO
VCOM
VIO
50%
0
COM
NC or NO
CL(2)
VI
IN
(2)
90%
90%
tBBM
Logic
Input(1)
(1)
Switch
Output
(VCOM)
RL
VNC or VNO = V+/2
RL = 50 Ω
CL = 35 pF
GND
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
Figure 18. Break-Before-Make Time (tBBM)
V+
Network Analyzer
50 W
VNO
NO
Channel ON: NO to COM
COM
VCOM
VI = VIH or VIL
Source
Signal
Network Analyzer Setup
50 W
VI
+
IN
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
Figure 19. Bandwidth (BW)
12
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DC Bias = 350 mV
TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V+
Network Analyzer
Channel OFF: NO to COM
50 W
VNO NO
VI = VIO or GND
COM
Source
Signal
VCOM
50 W
Network Analyzer Setup
VI
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
IN
+
GND
DC Bias = 350 mV
Figure 20. OFF Isolation (OISO)
V+
Network Analyzer
50 W
VNO1
Source
Signal
VNO2
NO1
NO2
COM2
50 W
VI
Channel ON: NO to COM
COM1
50 W
Network Analyzer Setup
Source Power = 0 dBm
(632 mV P-P at 50-W load)
IN
+
GND
DC Bias = 350 mV
Figure 21. Crosstalk (XTALK)
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13
TS3DS26227
HIGH-BANDWIDTH DUAL-SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
www.ti.com
SCDS234 – SEPTEMBER 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V+
RGEN
VGEN
Logic
Input
(VI)
VIH
OFF
ON
OFF V
IL
NO
COM
+
VCOM
∆VCOM
VCOM
CL(1)
VI
VGEN = 0 to V+
IN
Logic
Input(2)
(1)
(2)
RGEN = 0
CL = 1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
GND
CL includes probe and jig capacitance.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
Figure 22. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V+ P-P
VI = (VIO – V+/2) or −V+/2
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+/2
Audio Analyzer
NO
Source
Signal
COM
CL(1)
600 W
VI
IN
600 W
−V+/2
(1)
CL includes probe and jig capacitance.
Figure 23. Total Harmonic Distortion (THD)
14
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PACKAGE OPTION ADDENDUM
www.ti.com
5-Feb-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
TS3DS26227YZTR
ACTIVE
DSBGA
YZT
Pins Package Eco Plan (2)
Qty
12
3000 Green (RoHS &
no Sb/Br)
Lead/Ball Finish
SNAGCU
MSL Peak Temp (3)
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TS3DS26227YZTR
Package Package Pins
Type Drawing
SPQ
DSBGA
3000
YZT
12
Reel
Reel
Diameter Width
(mm) W1 (mm)
180.0
8.4
Pack Materials-Page 1
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
1.5
2.03
0.7
4.0
W
Pin1
(mm) Quadrant
8.0
Q2
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TS3DS26227YZTR
DSBGA
YZT
12
3000
220.0
220.0
34.0
Pack Materials-Page 2
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