Crystal oscillator FULL-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR SG-51 series SG-531 series HALF-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR Product number (please refer to page 1) Q3 2 5 1 0 x x x x x x x 0 0 Q3 2 5 3 1 x x x x x x x 0 0 • • • • SG-51 Pin compatible with full-size metal can. (SG-51 series) Pin compatible with half-size metal can. (SG-531 series) Cylindrical AT-cut crystal unit builtin, thus assuring high reliability. Use of CMOS IC enables reduction of current consumption. SG-531 Actual size Specifications (characteristics) Symbol Item Output frequency range Power source voltage Temperature range Max. supply voltage VDD-GND Operating voltage VDD Storage temperature TSTG Operating temperature TOPR Frequency stability ∆f/f0 Current consumption Output disable current CMOS level Duty TTL level Iop IOE CMOS TTL Output enable/disable input voltage CMOS level TTL level CMOS level TTL level Output rise time Output fall time tw/t VOH Output load condition (fan out) Oscillation start up time Aging Shock resistance SG-51PTJ/531PTJ 1.0250 MHz to 26.0000 MHz f0 Output voltage Specifications SG-51P/531P VOL CL N VIH VIL Remarks SG-51PH/531PH Refer to page 31. "Frequency range" 26.0001 MHz to 66.6667 MHz -0.3 V to +7.0 V 5.0 V±0.5 V -0.5 V to +7.0 V -55 °C to +125 °C -20 °C to +70 °C (-40 °C to +85 °C) B: ± 50 x 10-6 C: ±100 x 10-6 23 mA Max. 35 mA Max. 12 mA Max. 28 mA Max. 20 mA Max. 40 % to 60 % — 40 % to 60 % 45 % to 55 % — VDD-0.4 V Min. 2.4 V Min. VDD -0.4 V Min. 0.4 V Max. 50 pF Max. — 50 pF Max. 10 TTL Max. 5 TTL Max. — 2.0 V Min. 3.5 V Min. 2.0 V Min. 0.8 V Max. 1.5 V Max. 0.8 V Max. IIL= -100 µA Min. (OE=GND), PTJ: IIL = -500 µA Min. (OE=GND) — 5 ns Max. — 5 ns Max. CMOS load: 20 %→80 % VDD TTL load: 0.4 V→2.4 V CMOS load: 80 %→20 % VDD TTL load: 2.4 V→0.4 V tTLH 8 ns Max. tTHL 8 ns Max. tOSC 4 ms Max. Stored as bare product after unpacking Refer to page 31. "Frequency range" B type is possible up to 55.0 MHz No load condition OE=GND 1/2 VDD level 1.4 V level IOH = -400 µA (P,PTJ) /-4 mA (PH) IOL = 16 mA (P) / 8 mA (PTJ) / 4mA (PH) CL≤15 pF IIH=1 µA Max. (OE=VDD) 7 ns Max. — 7 ns Max. — More than for 1 ms until VDD =0 V→4.5 V Time at 4.5 V to be 0 s Ta=+25 °C, VDD =5 V,first year 10 ms Max. fa ±5 x 10-6/year Max. S.R. ±20 x 10-6 Max. Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition. • External by-pass capacitor is recommended. External dimensions (Unit: mm) SG-51 series SG-531 series 19.8 Max. 13.7 Max. NO. Pin terminal 6.36 E SG51P 9353B 16.0000MHz C #1 #7 1 7 8 14 #8 OE GND OUT VDD #5 SG531PTJC 60.0000M E 9353B 6.6 #8 #14 7.62 2.54 Min. 15.24 Note. OE Pin (P, PTJ, PH, PTW, PHW, PCW) OE pin - "H" or "open" : Specified frequency output. OE pin - "L" : Output is high impedance. 45 90° to 105° Pin terminal 1 4 5 8 OE or ST GND OUT VDD 7.62 #4 0.2 Min. 5.3 Max. 0.25 0.51 0.51 2.54 Min. 0.2 Min. 5.3 Max. #1 NO. 7.62 ST pin (STW, SHW, SCW) ST pin - "H" or "open" : Specified frequency output. ST pin - "L" : Output is low level (weak pull - down), oscillation stops. 90° to 105° 0.25 Crystal oscillator Specifications (characteristics) Item Symbol Specifications Frequency stability ∆f/f0 Current consumption Output disable current Standby current Duty Output rise time Output fall time Oscillation start up time Aging IOP IOE IST tw/t VOH VOL CL VIH VIL tTLH tTHL tOSC fa SG-531PCG SG-531SCG 1.5000 MHz to 26.0000 MHz -0.5 V to +7.0 V 2.7 V to 3.6 V -55 °C to +125 °C -40 °C to +85 °C B : ±50 x 10-6 C : ±100 x 10-6 M : ±100 x 10-6 12 mA Max. 10 mA Max. — — 50 µA Max. 45 % to 55 % VDD -0.4 V Min. 0.4 V Max. 25 pF 70 % VDD Min. 20 % VDD Max. 4.0 ns Max. 4.0 ns Max. 12 ms Max. ±5 x 10-6 / year Max. Shock resistance S.R. ±20 x 10-6 Max. Output frequency range fO Max. supply voltage VDD-GND Power source Operating voltage VDD voltage Storage temperature TSTG Temperature Operating temperature TOPR range Output voltage Output load condition (fan out) Output enable disable input voltage Remarks Refer to page 31. "Frequency range" Stored as bare product after unpacking Refer to page 31. "Frequency range" -20 °C to +70 °C -40 °C to +85 °C No load condition OE=GND (PCG) ST=GND (SCG) 50 % VDD, CL = 25 pF IOH = -8 mA IOL = 8 mA OE, ST OE, ST 20 % to 80 % VDD, CL ≤ 25 pF 80 % to 20 % VDD CL ≤ 25 pF Time at minimum operating voltage to be 0 s Ta=+25 °C, VDD =3.3 V, First year Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions Specifications (characteristics) Item Symbol Output frequency range fO Max. supply voltage Power source VDD-GND Operating voltage voltage VDD Storage temperature TSTG Temperature Operating temperature TOPR range Frequency stability Current consumption Output disable current Standby current ∆f/f0 IOP IOE IST Duty tw/t Output voltage VOH VOL Output load condition (fan out) CL Output enable disable input voltage VIH VIL Output rise time tTLH Output fall time tTHL Oscillation start up time Aging tOSC fa Shock resistance S.R. Specifications SG-531PTW/STW SG-531PHW/SHW 55.0001 MHz to 135.0000 MHz -0.5 V to +7.0 V 5.0 V ± 0.5 V -55 °C to +100 °C -20 °C to +70 °C B : ±50 x 10-6 C : ±100 x 10-6 — 45 mA Max. 30 mA Max. 50 µA Max. 40 % to 60 % — 45 % to 55 % — — 40 % to 60 % — 45 % to 55% — — VDD -0.4 V Min. 0.4 V Max. 15 pF — 5 TTL + 15 pF — 25 pF — — 15 pF — 25 pF — 50 pF — — 2.0 V Min. 0.8 V Max. 2.0 ns Max. — 4.0 ns Max. — — 3.0 ns Max. — — — 4.0 ns Max. 2.0 ns Max. — 4.0 ns Max. — — 3.0 ns Max. — — — 4.0 ns Max. 10 ms Max. ±5 x 10-6 /year Max. ±20 x 10-6 Max. SG-531PCW/SCW 26.0001 MHz to 135.0000 MHz Remarks Refer to page 31. "Frequency range" 3.3 V ± 0.3 V -40 °C to +85 °C M : ±100 x 10-6 28 mA Max. 16 mA Max. — — 40 % to 60 % — 45 % to 55% — — — 15 pF — — 30 pF 0.7 VDD Min. 0.2 VDD Max. — — — 3.0 ns Max. 4.0 ns Max. — — — 3.0 ns Max. 4.0 ns Max. Stored as bare product after unpacking Refer to page 31. "Frequency range" -20 °C to +70 °C -40 °C to +80 °C No load condition OE=GND(P∗W) ST=GND(S∗W) TTL load : 1.4 V, CL = Max. TTL load : 1.4 V, 5TTL + 15 pF, fo ≤ 66.6667 MHz CMOS load : 50% VDD, CL = Max. CMOS load : 50% VDD, CL = 25 pF, fo ≤ 66.6667 MHz CMOS load : 50% VDD, CL = 25 pF, fo ≤ 40.0 MHz IOH= -16 mA (∗TW/∗HW)/-8 mA(∗CW) IOL= 16 mA (∗TW/∗HW)/8 mA(∗CW) fo ≤ 135 MHz fo ≤ 90 MHz fo ≤ 66.6667 MHz fo ≤ 135 MHz fo ≤ 125 MHz fo ≤ 66.6667MHz fo ≤ 40.0 MHz OE,ST OE,ST TTL load: 0.8 V→2.0 V, CL = Max. TTL load: 0.4 V→2.4 V, CL = Max. CMOS load: 20 %→80 % VDD, CL= 25 pF CMOS load: 20 %→80 % VDD, CL= 15 pF CMOS load: 20 %→80 % VDD, CL= Max. TTL load: 2.0 V→0.8 V, CL = Max. TTL load: 2.4 V→0.4 V, CL = Max. CMOS load: 80 %→20 % VDD, CL= 25 pF CMOS load: 80 %→20 % VDD, CL= 15 pF CMOS load: 80 %→20 % VDD, CL= Max. Time at minimum operating voltage to be 0 s Ta=+25 °C, VDD =5.0 V / 3.3 V, First year Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions 46