EPSON SG-615P

Crystal oscillator
SOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-615 series
Product number (Please refer to P1)
Q33 6 1 5 x x x x x x x 0 0
• High-density mounting-type SMD.
• A general-purpose SMD with heat-resisting cylindrical AT-cut crystal unit
and allowing almost the same soldering temperature as SMD IC.
• Cylindrical AT crystal unit builtin, thus assuring high reliability.
• Low current consumption by output enable function(OE) or standby
function(ST).
Actual size
Specifications (characteristics)
Item
Output frequency range
Power source
voltage
Temperature
range
f0
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
SG-615P
tw/t
Output voltage
VOH
VOL
CL
N
VIH
VIL
Output load
condition (fan out)
Output enable/disable input voltage
Output rise time
tTLH
Output fall time
tTHL
Oscillation start up time
tOSC
Aging
Shock resistance
26.0001 MHz to 66.6667 MHz
4 ms Max.
Remarks
SG-615PH
-0.3 V to +7.0 V
5.0 V±0.5 V
-55 °C to +125 °C
-20 °C to +70 °C (-40 °C to +85 °C)
B: ±50 x 10-6
C: ±100 x 10-6
23 mA Max.
35 mA Max.
12 mA Max.
28 mA Max.
20 mA Max.
40 % to 60 %
—
40 % to 60 %
45 % to 55 %
—
VDD -0.4 V Min.
2.4 V Min.
VDD -0.4 V Min.
0.4 V Max.
50 pF Max.
—
50 pF Max.
10 TTL Max.
5 TTL Max.
—
2.0 V Min.
3.5 V Min.
2.0 V Min.
0.8 V Max.
1.5 V Max.
0.8 V Max.
—
7 ns Max.
8 ns Max.
5 ns Max.
—
7 ns Max.
—
8 ns Max.
—
5 ns Max.
∆f/f0
Iop
IOE
Duty
SG-615PTJ
1.0250 MHz to 26.0000 MHz
VDD-GND
VDD
TSTG
TOPR
Frequency stability
Current consumption
Output disable current
10 ms Max.
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
B type is possible up to 55 MHz
No load condition
OE=GND
CMOS load: 1/2VDD
TTL load: 1.4 V
IOH = -400 µA (P,PTJ) /-4 mA (PH)
IOL = 16 mA (P) /8mA (PTJ) /4 mA (PH)
_15 pF
CL<
IIH=1 µA Max.(OE=VDD)
IIL=-100 µA Min.(OE=GND) , PTJ : IIL=-500 µA Min.(OE=GND)
CMOS load: 20 %→80 % VDD
TTL load: 0.4 V→2.4 V
CMOS load: 80 %→20 % VDD
TTL load: 2.4 V→0.4 V
Time at 4.5 V to be 0 s
fa
±5 x 10-6/year Max.
Ta= +25 °C, VDD = 5 V, first year
S.R.
±20 x 10-6 Max.
Three drops on a hard board from 750 mm
or excitation test with 29400 m/s2 x 0.3 ms x
1/2sine wave in 3 directions
• Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
• External by-pass capacitor is recommended.
External dimensions
Recommended soldering pattern (Unit: mm)
8.65
9.8 Max.
SG-615P C
20.0000M
E 9352A
4.06
#3
4.7 Max.
#4
(Unit: mm)
NO.
Pin terminal
1
2
3
4
OE or ST
GND
OUT
VDD
1.3
3.0
Note:
Specifications
Symbol
0.51
5.08
Note.
OE Pin (P, PTJ, PH, PTW, PHW, PCW, PCN)
OE pin - "H" or "open" : Specified frequency output.
OE pin - "L" : Output is high impedance.
43
0.25 Min.
8.8
0.25
#1
#2
14.0 Max.
7.62
ST pin (STW, SHW, SCW)
ST pin - "H" or "open" : Specified frequency output.
ST pin - "L" : Output is low level (weak pull - down), oscillation stops.
5.08
Crystal oscillator
Specifications (characteristics)
Item
Symbol
Output frequency range
fO
Max. supply voltage
VDD-GND
Power source
Operating voltage
VDD
voltage
Storage temperature
TSTG
Temperature
Operating temperature
TOPR
range
Frequency stability
∆f/f0
Current consumption
Output disable current
Standby current
Duty
Output voltage
Output enable
disable input voltage
Output rise time
Output fall time
Oscillation start up time
Aging
IOP
IOE
IST
tw/t
VOH
VOL
CL
VIH
VIL
tTLH
tTHL
tOSC
fa
Shock resistance
S.R.
Output load condition (fan out)
Specifications
SG-615PCG
SG-615SCG
SG-615PCN
26.0001 MHz to 66.6667 MHz
1.5000 MHz to 26.0000 MHz
-0.5 V to +7.0 V
2.7 V to 3.6 V
3.0 V to 3.6 V
-55 °C to +125 °C
-40 °C to +85 °C
B : ±50 x 10-6 C : ±100 x 10-6
M : ±100 x 10-6
12 mA Max.
30 mA Max.
10 mA Max.
—
15 mA Max.
—
50 µA Max.
—
45 % to 55 %
VDD -0.4 V Min.
2.2 V Min.
0.4 V Max.
0.4 V Max.
25 pF
15 pF
70 % VDD Min.
70 % VDD Min.
20 % VDD Max.
30 % VDD Max.
4.0 ns Max.
7 ns
4.0 ns Max.
7 ns
12 ms Max.
10 mS Max.
±5 x 10-6 / year Max.
Remarks
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
-20 °C to +70 °C
-40 °C to +85 °C
No load condition
OE=GND (PCG/PCN)
ST=GND (SCG)
50 % VDD, CL = Max.
IOH = -8 mA
IOL = 8 mA
OE, ST
OE, ST
20 % to 80 % VDD, CL ≤ Max.
80 % to 20 % VDD CL ≤ Max.
Time at minimum operating voltage to be 0 s
Ta=+25 °C, VDD =3.3 V First year
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
±20 x 10-6 Max.
Specifications (characteristics)
Item
Symbol
Output frequency range
fO
Max. supply voltage
Power source
VDD-GND
Operating voltage
voltage
VDD
Storage temperature
TSTG
Temperature
Operating temperature
TOPR
range
Frequency stability
Current consumption
Output disable current
Standby current
∆f/f0
IOP
IOE
IST
Duty
tw/t
Output voltage
VOH
VOL
Output load condition (fan out)
CL
Output enable disable input voltage
VIH
VIL
Output rise time
tTLH
Output fall time
tTHL
Oscillation start up time
Aging
tOSC
fa
Shock resistance
S.R.
Specifications
SG-615PTW/STW
SG-615PHW/SHW
55.0001 MHz to 135.0000 MHz
-0.5 V to +7.0 V
5.0 V ± 0.5 V
-55 °C to +100 °C
-20 °C to +70 °C
B : ±50 x 10-6 C : ±100 x 10-6
—
45 mA Max.
30 mA Max.
50 µA Max.
40 % to 60 %
—
45 % to 55 %
—
—
40 % to 60 %
—
45 % to 55%
—
—
VDD -0.4 V Min.
0.4 V Max.
15 pF
—
5 TTL + 15 pF
—
25 pF
—
—
15 pF
—
25 pF
—
50 pF
—
—
2.0 V Min.
0.8 V Max.
2.0 ns Max.
—
4.0 ns Max.
—
—
3.0 ns Max.
—
—
—
4.0ns Max.
2.0 ns Max.
—
4.0 ns Max.
—
—
3.0 ns Max.
—
—
—
4.0ns Max.
10 ms Max.
±5 x 10-6 /year Max.
±20 x 10-6 Max.
SG-615PCW/SCW
26.0001 MHz to 135.0000 MHz
3.3 V ± 0.3 V
-40 °C to +85 °C
M : ±100 x 10-6
28 mA Max.
16 mA Max.
—
—
40 % to 60 %
—
45 % to 55%
—
—
—
15 pF
—
—
30 pF
0.7 VDD Min.
0.2 VDD Max.
—
—
—
3.0 ns Max.
4.0ns Max.
—
—
—
3.0 ns Max.
4.0ns Max.
Remarks
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
-20 °C to +70 °C
-40 °C to +80 °C
No load condition
OE=GND(P∗W)
ST=GND(S∗W)
TTL load : 1.4 V, CL = Max.
TTL load : 1.4 V, 5TTL + 15 pF, fo ≤ 66.6667 MHz
CMOS load : 50% VDD, CL = Max.
CMOS load : 50% VDD, CL = 25 pF, fo ≤ 66.6667 MHz
CMOS load : 50% VDD, CL = 25 pF, fo ≤ 40.0 MHz
IOH= -16 mA (∗TW/∗HW)/-8 mA(∗CW)
IOL= 16 mA (∗TW/∗HW)/8 mA(∗CW)
fo ≤ 135 MHz
fo ≤ 90 MHz
fo ≤ 66.6667 MHz
fo ≤ 135 MHz
fo ≤ 125 MHz
fo ≤ 66.6667MHz
fo ≤ 40.0 MHz
OE,ST
OE,ST
TTL load: 0.8 V→2.0 V, CL = Max.
TTL load: 0.4 V→2.4 V, CL = Max.
CMOS load: 20 %→80 % VDD, CL= 25 pF
CMOS load: 20 %→80 % VDD, CL= 15 pF
CMOS load: 20 %→80 % VDD, CL= Max.
TTL load: 2.0 V→0.8 V, CL = Max.
TTL load: 2.4 V→0.4 V, CL = Max.
CMOS load: 80 %→20 % VDD, CL= 25 pF
CMOS load: 80 %→20 % VDD, CL= 15 pF
CMOS load: 80 %→20 % VDD, CL= Max.
Time at minimum operating voltage to be 0 s
Ta=+25 °C, VDD =5.0 V / 3.3 V, First year
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
44