ETL MMUN2211RLT1

Bias Resistor Transistor
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RL34
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor.The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
∗ Simplifies Circuit Design
∗ Reduces Board Space
∗ Reduces Component Count
∗ The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
∗ Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
NPN SILICON
BIAS RESISTOR
TRANSISTOR
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
PIN1
base
(Input)
R1
PIN3
Collector
(output)
3
R2
1
PIN2
Emitter
(Ground)
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T A = 25°C (1)
Derate above 25°C
Symbol
VCBO
V CEO
IC
PD
Value
50
50
100
200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Symbol
R θJA
TJ , Tstg
Value
625
–65 to +150
260
10
Unit
°C/W
°C
°C
Sec
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
TL
DEVICE MARKING AND RESISTOR VALUES
MMUN2211RLT1
Marking
R1 (K)
R2 (K)
A8A
10
10
MMUN2212RLT1
A8B
22
MMUN2213RLT1
A8C
47
MMUN2214RLT1
A8D
10
MMUN2215RLT1 (2)
A8E
10
MMUN2216RLT1 (2)
A8F
4.7
MMUN2230RLT1 (2)
A8G
1
MMUN2231RLT1 (2)
A8H
2.2
MMUN2232RLT1 (2)
A8J
4.7
MMUN2233RLT1 (2)
A8K
4.7
MMUN2234RLT1 (2)
A8L
22
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
22
47
47
8 8
Device
1
2.2
4.7
47
47
Q2–1/8
MMUN2211RLT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
I CBO
I CEO
I EBO
50
50
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
nAdc
nAdc
mAdc
35
60
80
80
160
160
3.0
8.0
15
80
80
-
60
100
140
140
350
350
5.0
15
30
200
150
-
0.25
4.9
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
-
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB=50V, I E = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
MMUN2211RLT1
(VEB = 6.0 V, IC = 0)
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
Collector-Base Breakdown Voltage (IC=10mA, IE=0)
Collector-Emitter Breakdown Voltage(3)(IC=2.0mA, IB=0)
ON CHARACTERISTICS
V(BR)CBO
V(BR)CEO
Vdc
Vdc
(3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA)
(IC = 10 mA, IB = 5 mA) MMUN2230RLT1 MMUN2231RLT1
(IC = 10 mA, IB = 1 mA) MMUN2215RLT1 MMUN2216RLT1
MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1
Output Voltage (on)
(VCC=5.0V,VB=2.5V, RL=1.0kΩ)
MMUN2211RLT1
MMUN2212RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
(VCC =5.0V,VB=3.5V, RL= 1.0kΩ)
MMUN2213RLT1
Output Voltage(off)(VCC=5.0V,VB=0.5V, RL=1.0kΩ)
(VCC=5.0V,VB=0.050V, RL=1.0kΩ)
MMUN2230RLT1
(VCC=5.0V,VB=0.25V, RL=1.0kΩ)
MMUN2215RLT1
MMUN2216RLT1
MMUN2233RLT1
hFE
VCE(sat)
VOL
VOH
Vdc
Vdc
Vdc
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Q2–2/8
MMUN2211RLT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
Input Resistor
Symbol
Min
Typ
Max
Unit
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
0.8
0.17
—
0.8
0.055
0.38
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1.0
0.21
—
1.0
0.1
0.47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
1.2
0.25
—
1.2
0.185
0.56
kΩ
(3)
MMUN2211RLT1
R1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
Resistor Ratio MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1 R1/R2
MMUN2214RLT1
MMUN2215RLT1 MMUN2216RLT1
MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Q2–3/8
MMUN2211RLT1 SERIES
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
P D , POWER DISSIPATION (MILLIWATTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211RLT1
250
200
150
100
R
50
θJA
= 625°C/W
0
–50
0
50
10
1
I C /I B =10
T A = –25°C
25°C
75°C
0.1
0.01
0.001
150
0
20
1000
80
4
V
CE
= 10 V
f = 1 MHz
T A =75°C
25°C
–25°C
100
10
l E= 0 V
T A = 25°C
3
2
1
0
1
10
100
0
100
20
30
40
50
10
25°C
V in , INPUT VOLTAGE (VOLTS)
75°C
T A = –25°C
10
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
I C , COLLECTOR CURRENT (mA)
60
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
C ob , CAPACITANCE (pF)
h FE , DC CURRENT GAIN (NORMALIZED)
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
40
1
0.1
0.01
V O= 5 V
0.001
V O = 0.2 V
T A = –25°C
25°C
75°C
1
0.1
0
1
2
3
4
5
6
7
V in , INPUT VOLTAGE (VOLTS)
Figure 5. V CE(sat) versus I C
8
9
10
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 6. V CE(sta) versus I C
Q2–4/8
MMUN2211RLT1 SERIES
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212RLT1
1
I C /I B =10
T A = –25°C
25°C
75°C
0.1
0.01
0.001
0
20
40
60
V
= 10 V
25°C
–25°C
100
10
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
Figure 8. DC Current Gain
100
3
I C , COLLECTOR CURRENT (mA)
f = 1 MHz
l E= 0 V
T A = 25°C
2
1
0
10
20
30
40
75°C
25°C
T A = –25°C
10
1
0.1
0.01
V O= 5 V
0.001
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
0
CE
T A =75°C
80
4
C ob , CAPACITANCE (pF)
1000
V O = 0.2 V
T A = –25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Q2–5/8
MMUN2211RLT1 SERIES
10
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2213RLT1
T A = –25°C
I C /I B =10
25°C
75°C
1
0.1
0.01
0
20
40
60
V
CE
= 10 V
T A =75°C
25°C
–25°C
100
10
80
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) versus I C
Figure 13. DC Current Gain
1
100
0.8
I C , COLLECTOR CURRENT (mA)
f = 1 MHz
l E= 0 V
T A = 25°C
0.6
0.4
0.2
0
25°C
75°C
T A = –25°C
10
1
0.1
0.01
V O= 5 V
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
1000
V O= 2 V
T A=–25°C
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
Q2–6/8
MMUN2211RLT1 SERIES
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214RLT1
1
T A = –25°C
I C /I B =10
25°C
0.1
75°C
0.01
0.001
0
20
40
60
80
V
CE
T A =75°C
= 10V
250
25°C
200
–25°C
150
100
50
0
1
2
4
6
8
10
15
20
40
50
60
70
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
Figure 18. DC Current Gain
80
90 100
100
3.5
f = 1 MHz
l E= 0 V
3
T A= 25°C
I C , COLLECTOR CURRENT (mA)
4
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15
20
25
30
35
40
45
75°C
25°C
T A = –25°C
10
V O= 5 V
1
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
300
T A = –25°C
V O = 0.2 V
25°C
75°C
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
Q2–7/8
MMUN2211RLT1 SERIES
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM µP OR
OTHERLOGIC
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
V CC
OUT
IN
LOAD
Figure 23. Open Collector Inverter: Inverts
the Input Signal
Figure 24. Inexpensive, Unregulated Current
Source
Q2–8/8