3.3 V Laser Diode Driver F0530602B 02.08.08 ♦ Features F0530602B 3.3V Operation • Up to 1.3 Gb/s high speed operation • 3.3 V single power supply • Up to 35 mA p-p modulation current • Up to 35 mA bias current • Maximum bias current preset control Laser Diode Driver ♦ Applications • Laser diode driver of an optical transmitter circuit for SDH (STM4) / SONET (OC-12) ♦ Functional Description The F0530601B is a high performance GaAs integrated laser diode driver for use in an optical transmitter circuit up to 1.3 Gb/s NRZ data rate. The F0530601B typically specifies rise time and fall time of 300 psec (20 % - 80 %,25 Ω load). It features a low power 3.3 V supply operation, 1 to 35 mA presettable bias current and up to 35 mA modulation current. F0530602B 3.3 V Laser Diode Driver ♦ Absolute Maximum Ratings Ta=25 °C, unless specified Parameter Symbol Value Units Supply Voltage VDD , VSS - 0.2 to 4.0 V Supply Current Ickt 150 mA Modulation Current Iout 70 mA Bias Current Ioutbi 70 mA Input Voltage Vin VSS to VDD+0.5 V Junction Operating Temperature Storage Temperature Tj Tstg 0 to +140 °C -55 to +150 °C ♦ Recommended Operating Conditions Ta=25 °C , VDD=0 V, VSS=-3.3 V, unless specified Value Parameter Symbol Units Min. Typ. Max. Supply Voltage VDD- VSS 3.135 3.3 3.465 V Output Voltage Vout VDD -1.6 VDD -1.0 VDD V Input Voltage Vreg Vreg VSS +1.86 OPEN VSS +2.12 V Tj 0 25 125 °C Junction Operating Temperature F0530602B 3.3 V Laser Diode Driver ♦ Electrical Characteristics Ta=25 °C, VDD-VSS=3.135 ~ 3.465V, unless specified Value Parameter Symbol Supply Current Ickt Input Voltage (for TD,TDB) VIH Test Conditions IMOD, IBIAS are excluded Differential Input VIL Units Min. Typ. Max. - 35 50 mA VDD-1.17 VDD-0.8 VDD-0.73 V VDD-1.95 VDD-1.8 VDD-1.45 V IIH VIH=VDD-0.7V -100 - 100 µA IIL VIL=VDD-1.9V -100 - 100 µA Input Resistance Ri DC, VDD=VSS=GND 1 1.3 - kΩ Input Bias Voltage VIB VDD-VSS=3.3V VDD-1.17 VDD-1.3 VDD-1.43 V Input Current Modulation Current Bias Current Input Voltage for Disable IMMAX VDIS=OPEN 35 - - mA IMMIN VDIS=OPEN - - 5 mA IMDIS VDIS=VDD-0.2V - - 0.5 mA IBMAX VDIS=OPEN 35 - - mA IBMIN VDIS=OPEN - - 5 mA IBDIS VDIS=VDD-0.2V - - 0.5 mA VDISIH Disable Operation VDD-2 - VDD V VDISIL Enable Operation VSS OPEN VSS+0.2 V - 10 - Ω Resistance for Bias Monitor RBM Monitor Voltage of Mark Ratio VMRK Differential Output - 0.9 - V Rise time tr RL=25Ω, 20%-80% - 300 - ps Fall time tf RL=25Ω, 20%-80% - 300 - ps F0530602B 3.3 V Laser Diode Driver ♦ Block Diagram MRKOUT TDb Bias Circuit TD + OUT + Input Buffer TDB MRKOUTB - Output Buffer Mod. Circuit - OUTTB OUTBIAS VM TDBb BMP Bias Circuit Into Circuit Control Circuit Bias Circuit Vreg Disable VB ♦ Die Pad Description TD Data Input (pos.) TDB Data Input (neg.) TDb Input Bias (pos.) TDBb Input Bias (neg.) OUT Modulation Current Output (pos.) OUTB Modulation Current Output (neg.) OUTBIAS Bias current Output VM Modulation Current Control VB Bias Current control Disable Current Shutdown Control Vreg Reference Voltage BMP Bias Current Monitor (pos.) BMN Bias Current Monitor (neg.) MRKOUT Mark ratio Monitor (pos.) MRKOUTB Mark ratio Monitor (neg.) BMN F0530602B 3.3 V Laser Diode Driver ♦ Die Pad Assignments 21 19 18 17 16 15 14 13 22 12 23 11 24 10 1 Symbol No. 20 2 3 4 5 6 Center Coordinates (µm) No. 7 Symbol 8 9 Center Coordinates (µm) 1 BMN (80,80) 15 ALMINB 2 BMP (240,80) 16 Vreg (880,810) 3 OUTBIAS (400,80) 17 VSS (720,810) 4 OUT (560,80) 18 TD (560,810) 5 VSSmod (720,80) 19 TD (bias) (400,810) 6 OUTB (880,80) 20 TDB (240,810) 7 VDD TEMP (1040,80) 21 TDB (bias) (80,810) 8 VSS TEMP (1200,80) 22 TD (80,625) 9 VM (1360,80) 23 VDD (80,445) 10 VB (1360,265) 24 VSSbias 11 MARKOUTB (1360,445) 12 MARKOUT (1360,625) 13 Disable (1360,810) O (0,0) 14 ALMIN (1200,810) A (1440,890) (1040,810) (180,265) F0530602B 3.3 V Laser Diode Driver ♦ Test Circuits OUT OUTB TD OUTBIAS VM DC Source/ Monitor Unit TDB DUT VB TDb TDBb VSS Probing System VSSmod VSSbias DC Source/ Monitor Unit F0530602B 3.3 V Laser Diode Driver ♦ Typical DC Characteristics (1) Switching Characteristics (a) Modulation Current Switching IO (mA) VM=-2.2V Output Current Iout (mA) 80.00 VM=-2.3V VM=-2.4V 8.000 /div VM=-2.5V VM=-2.6V VM=-2.7V VM=-2.8V .0000 -1.800 VTD .1000/div (v) -.8000 Input Voltage VIN1 (V) (VSS=-3.3V, TDB=-1.3V, VB=-2.6V) (b) Output Current Switching IO (mA) VB=-2.2V VB=-2.3V Output Current Iout (mA) 80.00 VB=-2.4V 8.000 /div VB=-2.5V VB=-2.6V VB=-2.7V VB=-3.3V .0000 -1.800 VTD .1000/div (v) Input Voltage VIN1 (V) (VSS=-3.3V, TDB=-1.3V, VM=-2.5V) -.8000 F0530602B 3.3 V Laser Diode Driver (2) Modulation Current Control Modulation Current IM(mA) IO (mA) 80.00 8.000 /div .0000 -3.500 .1500/div (v) -2.000 Control Voltage VM(V) (VSS=-3.3V, TD=-1.0V, TDB=-1.6V, OUTBIAS,VB: open) (3) Bias Current Control IO (mA) Bias Current IB (mA) 80.00 8.000 /div .0000 -3.500 .1500/div (v) Control Voltage VB (V) (VSS=-3.3V, TD, TDB,VM : open, OUT : open) -2.000 F0530602B 3.3 V Laser Diode Driver (4) The Dependence of Modulation Current on the ambient temperature 80 VM=-2.2V 70 VM=-2.3V 60 VM=-2.4V IM (mA) 50 VM=-2.5V 40 30 VM=-2.6V 20 VM=-2.7V 10 0 -40 -20 0 20 40 60 80 100 Ambient Temperature (°C) (VSS=-3.3V, TD=-1.0V, TDB=-1.6V, VB, OUTBIAS: open) Electron Device Department