EUDYNA FHX13LG

FHX13LG, FHX14LG
Super Low Noise HEMT
FEATURES
• Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13)
• High Associated Gain: 13.0dB (Typ.)@f=12GHz
• Lg ≤ 0.15µm, Wg = 200µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available
DESCRIPTION
TM
The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT )
intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz
frequency range. The devices are packaged in cost effective, low parasitic, hermetically
sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or
other low noise applications.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and
consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
3.5
V
Gate-Source Voltage
VGS
-3.0
V
Pt*
180
mW
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Total Power Dissipation
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
IDSS
gm
Vp
VGSO
Noise Figure
FHX13LG
Associated Gain
Associated Gain
NF
FHX14LG
Thermal Resistance
VDS = 2V, VGS =0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
Min.
10
35
-0.1
IGS = -10µA
-3.0
NF
Gas
Noise Figure
Condition
Gas
Rth
VDS = 2V,
IDS = 10mA,
f = 12GHz
Channel to Case
AVAILABLE CASE STYLES: LG
Note: RF parameters for LG devices are measured on a sample basis as follows:
1200
1201
3201
10001
Lot qty.
or
to
to
or
Edition 1.1
July 1999
less
3200
10000
over
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
1
Limit
Typ. Max.
30
60
50
-0.7
-1.5
-
Unit
mA
mS
V
-
0.45
0.50
V
dB
11.0
13.0
-
dB
-
0.55
0.60
dB
11.0
13.0
-
dB
-
300
400
°C/W
FHX13LG, FHX14LG
Super Low Noise HEMT
Total Power Dissipation (mW)
POWER DERATING CURVE
200
150
LG
100
50
0
0
50
100
150
200
Ambient Temperature (°C)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Drain Current (mA)
40
VGS =0V
30
-0.2V
20
10
-0.4V
0
-0.6V
-0.8V
3
1
2
Drain-Source Voltage (V)
2
4
FHX13LG, FHX14LG
Super Low Noise HEMT
NF & Gas vs. IDS
FHX13LG
3.0
Gas
2
10
1
5
Noise Figure (dB)
15
3
2.5
Associated Gain (dB)
Noise Figure (dB)
VDS=2V
IDS=10mA
14
f=12GHz
VDS=2V
Gas
13
2.0
12
1.5
11
1.0
10
NF
9
0.5
NF
0
4
6
8 10 12
10
20
30
Frequency (GHz)
Drain Current (mA)
NF & Gas vs. TEMPERATURE
FHX13LG
OUTPUT POWER vs. INPUT POWER
FHX13LG
25 f=12GHz
1.5
15
Gas
1.0
10
0.5
5
NF
0
100
200
300
Output Power (dBm)
f=12GHz
VDS=2V
IDS=10mA
Associated Gain (dB)
Noise Figure (dB)
0
20
400
15
VDS=2V
IDS=10mA
10
5
-10
-5
0
5
Input Power (dBm)
Ambient Temperature (°K)
3
10
Associated Gain (dB)
NF & Gas vs. FREQUENCY
FHX13LG
FHX13LG, FHX14LG
Super Low Noise HEMT
TYPICAL NOISE FIGURE CIRCLE
FHX13LG
+j50
+j100
+j25
1.5
+j10
0
+j250
1.0
Γopt
10
2.5
3.0
2.0
25
50
f = 12 GHz
VDS = 2V
IDS = 10mA
100
-j10
Γopt = 0.61∠150°
Rn/50 = 0.04
NFmin = 0.45dB
-j250
-j25
-j100
-j50
Ga(max) & |S21|2 vs. FREQUENCY
20
VDS = 2V
IDS = 10mA
Gain (dB)
15
Ga(max)
10
|S21|2
5
0
4
6
8 10 12
20
Frequency (GHz)
NOISE PARAMETERS
FHX13LG
VDS=2V, IDS=10mA
Freq.
(GHz)
2
4
6
8
10
12
14
16
18
Γopt
(MAG) (ANG)
0.96
0.92
0.86
0.79
0.71
0.61
0.50
0.38
0.24
29
57
83
107
129
150
168
-175
-161
4
NFmin
(dB)
Rn/50
0.33
0.34
0.35
0.37
0.40
0.45
0.53
0.63
0.83
0.22
0.20
0.15
0.11
0.07
0.04
0.04
0.06
0.10
FHX13LG, FHX14LG
Super Low Noise HEMT
S11
S22
+j50
S21
S12
+90°
+j100
+j25
20 GHz
20 GHz
5
+j250
+j10
5
15
25
15
50Ω
100
180°
250
1.0 GHz
-j10
8
1.0 GHz
6
4
1.0 GHz
1
SCALE FOR |S21|
10
-j250
10
5
0.06
0.08
-j100
5
10
0°
10
15
0.02
20 GHz
0.04
1.0 GHz
-j25
2
15
SCALE FOR |S12|
0
20 GHz
-90°
-j50
S-PARAMETERS
FHX13/14LG
VDS = 2V, IDS = 10mA
FREQUENCY
(MHZ)
MAG
S11
ANG
MAG
S21
ANG
MAG
S12
1000
0.988
-20.0
5.327
160.1
0.015
2000
0.956
-39.5
5.133
141.0
0.028
3000
0.908
-58.1
4.851
123.0
4000
0.862
-75.5
4.534
105.9
5000
0.811
-91.6
4.213
6000
0.763
-107.1
3.886
7000
0.727
-121.1
8000
0.701
-133.3
S22
ANG
MAG
ANG
75.7
0.574
-16.3
63.3
0.560
-32.1
0.039
50.1
0.539
-47.3
0.048
39.0
0.522
-62.0
89.7
0.053
29.3
0.502
-75.6
74.4
0.056
21.0
0.488
-89.6
3.582
60.0
0.057
13.2
0.487
-103.0
3.300
46.4
0.056
7.9
0.498
-114.9
9000
0.682
-144.1
3.078
33.8
0.055
3.5
0.515
-125.0
10000
0.659
-154.2
2.899
21.4
0.055
-0.0
0.531
-134.4
11000
0.636
-164.4
2.748
9.3
0.054
-2.6
0.544
-144.0
12000
0.618
-175.4
2.593
-3.3
0.054
-5.2
0.561
-155.1
13000
0.608
175.5
2.466
-14.8
0.054
-5.7
0.590
-164.0
14000
0.596
166.6
2.366
-26.6
0.055
-7.8
0.619
-172.4
15000
0.585
158.3
2.279
-38.3
0.056
-9.7
0.654
-179.7
16000
0.564
148.8
2.244
-50.7
0.058
-12.8
0.677
172.6
17000
0.543
138.2
2.217
-63.6
0.061
-17.6
0.701
163.4
18000
0.525
127.3
2.185
-77.1
0.063
-24.7
0.727
154.1
19000
0.506
116.2
2.143
-91.4
0.063
-33.1
0.748
143.6
20000
0.470
106.5
2.089
-105.4
0.061
-43.7
0.763
137.2
Download S-Parameters, click here
5
FHX13LG, FHX14LG
Super Low Noise HEMT
Case Style "LG"
Metal-Ceramic Hermetic Package
4.78±0.5
1.78±0.15 1.5±0.3
(0.07)
(0.059)
1.5±0.3
(0.059)
1.0
(0.039)
1.5±0.3
(0.059)
1
3
4.78±0.5
1.78±0.15 1.5±0.3
(0.07)
(0.059)
2
4
0.5
(0.02)
1.3 Max
(0.051)
1.
2.
3.
4.
Gate
Source
Drain
Source
0.1
(0.004)
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
TM
SuperHEMT
6
is a trademark of Fujitsu Limited.