FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Gate Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Condition Rating Unit 15 -5 V V W Tstg 1.15 -65 to +175 °C Tch 175 °C Symbol VDS VGS Ptot Tc = 25°C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 1.34 and -0.05 mA respectively with gate resistance of 3000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions VDS = 5V, VGS = 0V Min. - Limit Typ. Max. 60 90 Unit mA Transconductance gm VDS = 5V, IDS = 40mA - 30 - mS Pinch-off Voltage Gate Source Breakdown Voltage Vp VGSO VDS = 5V, IDS = 3mA IGS = -3µA -1.0 -5 -2.0 - -3.5 - V V Output Power at 1dB G.C.P. P1dB 20.5 7.0 8.0 - dBm G1dB Power-added Efficiency ηadd VDS = 10V IDS ≈ 0.6 IDSS f = 14.5GHz 19.5 Power Gain at 1dB G.C.P. - 26 - % - 2.5 - dB - 7 - dB VDS = 10V IDS = 36mA f = 12GHz - 11 - dB Channel to Case - 65 130 °C/W Noise Figure NF Associated Gain Gas Maximum Availble Gain Thermal Resistance Ga(max) Rth VDS = 3V IDS = 20mA f = 12GHz Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) G.C.P.: Gain Compression Point The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.3 July 1999 dB 1 FLK017XP GaAs FET & HEMT Chips DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 2 Drain Current (mA) Total Power Dissipation (W) POWER DERATING CURVE 1 60 VGS =0V -0.5V 40 -1.0V 20 -1.5V -2.0V 50 100 150 200 P1dB (dBm) Pout 40 14 ηadd 4 6 8 10 12 20 ηadd (%) Output Power (dBm) 22 16 2 8 10 P1dB & ηadd vs. VDS OUTPUT POWER vs. INPUT POWER 12 6 Drain-Source Voltage (V) Case Temperature (°C) VDS=10V 20 IDS≈0.6IDSS f = 14.5GHz 18 4 f = 14.5GHz IDS≈0.6IDSS 21 P1dB 20 40 30 19 ηadd 20 18 8 14 9 10 Drain-Source Voltage (V) Input Power (dBm) 2 ηadd (%) 0 2 FLK017XP GaAs FET & HEMT Chips FREQUENCY (MHZ) 100 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 18500 19000 19500 20000 S11 MAG ANG 1.000 .998 .992 .982 .969 .953 .936 .918 .899 .881 .863 .846 .830 .816 .802 .791 .780 .771 .764 .757 .752 .747 .744 .741 .739 .738 .738 .738 .739 .740 .742 .744 .746 .749 .752 .755 .758 .761 .765 .768 .772 -1.9 -9.5 -18.9 -28.2 -37.4 -46.3 -55.0 -63.5 -71.6 -79.5 -87.1 -94.4 -101.5 -108.3 -114.8 -121.1 -127.1 -133.0 -138.6 -143.9 -149.1 -154.1 -158.9 -163.5 -168.0 -172.3 -176.4 179.6 175.8 172.1 168.5 165.1 161.8 158.5 155.5 152.5 149.6 146.8 144.1 141.4 138.9 S-PARAMETERS VDS = 10V, IDS = 40mA S21 S12 MAG ANG MAG ANG MAG ANG 2.832 2.824 2.799 2.758 2.703 2.638 2.564 2.485 2.401 2.316 2.231 2.147 2.064 1.985 1.908 1.834 1.764 1.697 1.634 1.574 1.516 1.462 1.410 1.361 1.314 1.269 1.227 1.186 1.147 1.110 1.074 1.039 1.006 .974 .943 .913 .885 .856 .829 .803 .777 .846 .845 .842 .838 .832 .825 .817 .809 .800 .792 .784 .776 .769 .762 .755 .749 .744 .739 .735 .731 .727 .724 .721 .718 .716 .713 .711 .710 .708 .707 .706 .705 .704 .704 .703 .703 .703 .703 .703 .704 .704 -0.6 -2.9 -5.7 -8.5 -11.2 -13.8 -16.4 -18.8 -21.2 -23.5 -25.8 -28.0 -30.1 -32.2 -34.3 -36.4 -38.4 -40.5 -42.5 -44.6 -46.7 -48.8 -51.0 -53.2 -55.4 -57.6 -59.8 -62.1 -64.5 -66.8 -69.2 -71.7 -74.2 -76.7 -79.2 -81.8 -84.5 -87.1 -89.8 -92.6 -95.3 178.4 171.9 163.9 156.0 148.3 140.7 133.4 126.2 119.4 112.7 106.3 100.1 94.1 88.3 82.7 77.2 72.0 66.8 61.8 57.0 52.2 47.6 43.0 38.6 34.2 29.9 25.7 21.6 17.5 13.5 9.5 5.6 1.7 -2.1 -5.9 -9.6 -13.3 -16.9 -20.5 -24.1 -27.7 .001 .007 .014 .021 .028 .034 .039 .044 .049 .053 .056 .059 .062 .064 .066 .067 .069 .070 .071 .072 .072 .073 .073 .073 .073 .073 .073 .073 .073 .073 .072 .072 .072 .071 .071 .071 .070 .070 .070 .070 .069 88.9 84.7 79.5 74.3 69.4 64.6 60.0 55.6 51.5 47.6 44.0 40.6 37.3 34.3 31.5 28.9 26.4 24.1 21.9 19.8 17.9 16.1 14.4 12.8 11.3 9.9 8.6 7.3 6.2 5.1 4.1 3.1 2.3 1.5 0.7 0.0 -0.6 -1.2 -1.7 -2.2 -2.7 S22 NOTE:* The data includes bonding wires. n: number of wires Gate n=1 (0.2mm length, 25µm Dia Au wire) Drain n=1 (0.2mm length, 25µm Dia Au wire) Source n=4 (0.3mm length, 25µm Dia Au wire) 3 Download S-Parameters, click here FLK017XP GaAs FET & HEMT Chips CHIP OUTLINE 40 50 (Unit: µm) Source Source 60 Gate 110 410±30 Drain 40 70 70 Source electrodes are electrically insulated from the bottom of the chip (PHS) 330±30 Die Thickness: 60±20µm For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4