FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Source Gate Source Gate Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Condition Rating Unit 15 -5 V V W Tstg 3.75 -65 to +175 °C Tch 175 °C Symbol VDS VGS Ptot Tc = 25°C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.4 and -0.2 mA respectively with gate resistance of 1000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 200 300 mA Transconductance gm VDS = 5V, IDS = 125mA - 100 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 10mA -1.0 -2.0 -3.5 V -5 - - V 26 27 - dBm 6 7 - dB - 32 - % - 20 40 °C/W Gate Source Breakdown Voltage VGSO Output Power at 1dB Gain Compression Point P1dB Power Gain at 1dB Gain Compression Point G1dB Power-added Efficiency ηadd Thermal Resistance Rth IGS = -10µA VDS = 10V IDS ≈ 0.6IDSS f = 14.5GHz Channel to Case Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.3 July 1999 1 FLK057XV GaAs FET & HEMT Chips Drain Current (mA) 4 3 2 VGS =0V 200 -0.5V 150 -1.0V 100 -1.5V 50 1 -2.0V 50 100 150 2 200 4 6 8 10 Case Temperature (°C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER P1dB & ηadd vs. VDS VDS=10V 27 IDS≈0.6IDSS f = 14.5GHz P1dB (dBm) 25 28 Pout 23 21 40 20 19 ηadd 10 12 14 16 18 20 22 f = 14.5GHz IDS≈0.6IDSS 27 P1dB 26 40 ηadd 25 30 24 20 8 Input Power (dBm) 9 10 Drain-Source Voltage (V) 2 ηadd (%) 0 Output Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE ηadd (%) Total Power Dissipation (W) POWER DERATING CURVE FLK057XV GaAs FET & HEMT Chips FREQUENCY (MHZ) 100 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 18500 19000 19500 20000 S11 MAG 1.000 .989 .965 .940 .919 .904 .893 .885 .879 .875 .872 .870 .869 .868 .867 .867 .867 .867 .867 .867 .868 .868 .869 .870 .870 .871 .872 .873 .874 .875 .876 .877 .879 .880 .881 .882 .883 .885 .886 .887 .888 ANG -6.4 -31.3 -58.9 -81.4 -99.1 -113.1 -124.1 -133.2 -140.7 -147.0 -152.5 -157.4 -161.7 -165.6 -169.1 -172.4 -175.4 -178.3 179.0 176.5 174.1 171.8 169.6 167.5 165.4 163.4 161.5 159.6 157.8 156.1 154.3 152.6 151.0 149.4 147.8 146.3 144.7 143.2 141.8 140.3 138.9 S-PARAMETERS VDS = 10V, IDS = 120mA S21 S12 MAG ANG MAG ANG MAG 6.959 6.696 6.033 5.262 4.551 3.952 3.462 3.062 2.735 2.464 2.236 2.043 1.877 1.733 1.607 1.496 1.398 1.309 1.230 1.158 1.092 1.032 .977 .927 .880 .836 .795 .758 .722 .689 .657 .628 .600 .574 .549 .525 .503 .482 .462 .442 .424 .500 .488 .460 .430 .406 .389 .380 .376 .377 .380 .386 .394 .404 .414 .426 .438 .451 .464 .477 .490 .504 .517 .531 .544 .557 .570 .583 .596 .609 .621 .633 .645 .656 .667 .678 .689 .699 .709 .719 .728 .737 175.9 159.7 141.7 126.6 114.2 103.9 95.1 87.2 80.2 73.7 67.7 62.0 56.6 51.4 46.4 41.5 36.8 32.1 27.6 23.2 18.9 14.6 10.5 6.4 2.3 -1.7 -5.6 -9.4 -13.2 -16.9 -20.6 -24.2 -27.8 -31.3 -34.8 -38.2 -41.5 -44.8 -48.1 -51.3 -54.4 .004 .020 .036 .046 .054 .058 .061 .063 .065 .065 .066 .066 .067 .067 .067 .067 .067 .066 .066 .066 .066 .065 .065 .064 .064 .064 .063 .063 .062 .061 .061 .060 .060 .059 .059 .058 .057 .057 .056 .055 .055 86.4 72.5 57.1 44.7 35.1 27.4 21.2 16.1 11.7 7.9 4.5 1.5 -1.4 -4.0 -6.4 -8.8 -11.0 -13.1 -15.1 -17.1 -19.0 -20.8 -22.6 -24.4 -26.1 -27.8 -29.4 -31.0 -32.6 -34.1 -35.6 -37.1 -38.6 -40.0 -41.5 -42.9 -44.2 -45.6 -46.9 -48.2 -49.5 S22 ANG -3.0 -14.6 -27.4 -37.7 -46.1 -53.2 -59.3 -65.0 -70.2 -75.2 -79.9 -84.5 -88.9 -93.1 -97.3 -101.3 -105.1 -108.9 -112.6 -116.1 -119.6 -123.0 -126.3 -129.5 -132.7 -135.8 -138.8 -141.8 -144.7 -147.6 -150.3 -153.1 -155.8 -158.4 -161.0 -163.5 -166.0 -168.4 -170.8 -173.2 -175.5 NOTE:* The data includes bonding wires. n: number of wires Gate Drain n=2 (0.2mm length, 25µm Dia Au wire) n=2 (0.2mm length, 25µm Dia Au wire) 3 Download S-Parameters, click here FLK057XV GaAs FET & HEMT Chips CHIP OUTLINE 50 (Unit: µm) 50 85 Source Source 50 Source Drain 410±30 Drain Gate Source electrodes are connected to the PHS by Via-Hole Die Thickness: 60±20µm Gate (Via-Hole) 50 430±30 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4