FLL1200IU-3 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W (Typ.) High PAE: 44%. Broad Frequency Range: 2400 to 2500 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it offers high gain, long term reliability and ease of use. APPLICATIONS • Solid State Base-Station Power Amplifier. • WLL Communication Systems. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 187.5 W Tc = 25°C Total Power Dissipation PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch +175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 156.0mA and -57.6mA respectively with gate resistance of 10Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Conditions Symbol Min. Limits Typ. Max. Unit Drain Current IDSS VDS = 5V, VGS = 0V - 48 - A Transconductance gm VDS = 5V, IDS = 28.8A - 24 - S Pinch-Off Voltage Vp VDS = 5V, IDS = 2.88A -1.0 -2.0 -3.5 V VGSO IGS = -2.88mA -5 - - V Output Power Pout 49.8 50.8 - dBm Linear Gain GL 10.0 11.0 - dB - 20 30 A Gate-Source Breakdown Voltage Drain Current IDSR VDS = 12V f = 2.5 GHz IDS = 5.0A Pin = 41.0dBm Power-Added Efficiency ηadd Note 1 - 44 - % Thermal Resistance Rth Channel to Case - 0.6 0.8 °C/W CASE STYLE: IU Note 1: The device shall be measured at a constant VGS condition. Edition 1.4 December 1999 1 FLL1200IU-3 L-Band High Power GaAs FET OUTPUT POWER & ηadd vs. INPUT POWER POWER DERATING CURVE 52 150 VDS = 12V IDS = 5.0A f = 2.5GHz Output Power (dBm) 48 100 50 Pout 46 50 44 40 ηadd 42 30 40 20 38 10 0 0 50 100 150 200 Ambient Temperature (°C) 26 28 30 32 34 36 Input Power (dBm) OUTPUT POWER vs. FREQUENCY 52 51 VDS = 12V IDS = 5A Pin=42dBm 49 41dBm 39dBm 47 45 35dBm 43 41 31dBm 39 37 27dBm 2.35 2.4 2.45 2.5 2.55 Frequency (GHz) 2 2.6 2.65 2.7 38 40 0 42 ηadd (%) 50 Output Power (dBm) Total Power Dissipation (mW) 200 FLL1200IU-3 L-Band High Power GaAs FET OUTPUT POWER vs. IMD -25 VDS = 12V IDS = 5.0A f = 2.5GHz ∆f = 1.0MHz 2-tone test IM3 -30 IMD (dBc) -35 IM5 -40 -45 -50 -55 -60 33 35 37 39 41 43 45 Total Output Power (dBm) FREQUENCY (MHZ) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000 S11 MAG ANG .924 .925 .916 .919 .916 .918 .915 .921 .916 .916 .907 .879 .797 .504 .142 .473 .639 .722 .784 .833 .851 .844 .802 .748 .702 .720 .778 .827 .859 .878 .887 167.9 166.5 165.4 164.3 162.7 161.3 159.2 156.9 153.5 149.8 144.4 136.3 122.7 98.3 -176.2 -169.7 177.2 167.8 159.2 148.2 134.5 117.7 94.3 62.0 17.6 -31.3 -71.5 -99.9 -119.2 -132.7 -143.2 S-PARAMETERS Download S-Parameters, click here VDS = 12V, IDS = 2.5A S21 S12 S22 MAG ANG MAG ANG MAG ANG .405 .420 .444 .476 .517 .573 .643 .732 .854 1.032 1.310 1.777 2.631 3.957 4.372 3.661 3.009 2.643 2.323 1.962 1.556 1.239 1.012 .847 .683 .511 .352 .236 .163 .115 .086 19.7 10.8 1.6 -9.2 -19.8 -31.5 -43.6 -56.3 -69.8 -83.6 -98.8 -116.9 -141.7 178.8 125.5 87.7 55.7 26.2 -4.8 -36.6 -65.9 -91.5 -115.7 -141.4 -169.5 162.6 137.6 118.5 103.8 92.2 82.7 .004 .005 .006 .006 .008 .008 .008 .009 .009 .011 .013 .015 .021 .032 .038 .037 .036 .037 .037 .035 .033 .029 .027 .024 .021 .018 .014 .012 .011 .010 .010 12.6 7.2 -4.6 -9.9 -13.2 -26.4 -34.9 -42.6 -57.7 -77.0 -92.5 -119.8 -156.8 151.7 85.2 40.0 2.3 -30.6 -66.6 -99.5 -129.0 -152.6 -175.5 163.0 139.1 119.7 99.4 89.2 76.1 70.3 69.7 .894 .883 .868 .853 .837 .819 .801 .780 .760 .734 .699 .642 .532 .369 .488 .564 .491 .308 .129 .348 .582 .730 .810 .857 .886 .905 .913 .920 .915 .919 .918 Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs. 3 166.2 165.0 163.6 162.3 161.3 160.2 158.8 157.4 155.9 153.8 151.1 147.0 142.7 154.6 175.8 165.5 151.9 143.7 -166.4 -122.7 -132.0 -142.8 -152.1 -159.7 -165.6 -171.0 -175.3 -178.5 177.2 173.7 170.8 FLL1200IU-3 L-Band High Power GaAs FET Case Style "IU" 23.9±0.25 (0.941) 3 0.1 (0.004) 17.4±0.15 (0.685) 6 15.5±0.15 (0.610) 2 8.0±0.15 (0.315) 1 2.0 MIN. 12-R0.5 2.0 (0.078) 5 4 1.9±0.15 (0.075) 2.0 MIN. 4-R1.3 10.0±0.2 (0.393) 30.4±0.25 (1.181) 2.4±0.15 (0.094) 4.5 Max. (0.177) 34.0±0.25 (1.339) 0.7±0.2 1, 2: 3: 4, 5: 6: Gate Source Drain Source Unit: mm (inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0299M200 4