EUDYNA FLM1314-18F

FLM1314-18F
X,Ku-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=42.5dBm(Typ.)
・High Gain: G1dB=6.0dB(Typ.)
・High PAE: ηadd=27%(Typ.)
・Broad Band: 13.75~14.5GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM1314-18F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VD S
V GS
PT
Tstg
Tch
Unit
V
V
W
o
C
o
C
Rating
15
-5
75
-65 to +150
175
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25o C)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Symbol
VD S
IGF
IGR
Condition
Unit
V
mA
mA
Limit
≦10
≦44.6
≧-9.6
RG=25 ohm
RG=25 ohm
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C)
Item
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Symbol
IDSS
gm
Vp
V GSO
P1dB
G1dB
Idsr
Nadd
∆G
3rd Order Intermodulation
Distortion
IM3
Thermal Resistance
Channel Temperature Rise
Rth
∆ Tch
Condition
V DS =5V , V GS=0V
V DS =5V , ID S=4.65A
V DS =5V , ID S=390mA
IGS=-390uA
V DS =10V
IDSDC=4.0A
f= 13.75 ~ 14.5 GHz
Zs=Z L=50 ohm
f=14.5 GHz
∆ f=10MHz，2-tone Test
Pout=36.0dBm (S.C.L.)
Channel to Case
10V x Idsr X Rth
CASE STYLE : IB
ESD
Class III
2000V ~
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kΩ)
Edition 1.1
May 2005
1
Min.
-0.5
-5.0
42.0
5.0
-
Limit
Typ.
9.3
6600
-1.5
42.5
6.0
5.0
27
-
Max.
14
-3.0
6.0
1.2
-25
-30
-
-
1.8
-
2.0
100
Unit
A
mS
V
V
dBm
dB
A
%
dB
dBc
o
C/W
o
C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
FLM1314-18F
X,Ku-Band Internally Matched FET
OUTPUT POWER , POWER ADDED EFFICIENCY
v.s. INPUT POWER
Freq=14.125GHz
Vds=10V IdsDC=4.0A
Output Power (dBm)
Total Power Dissipation [W]
80
60
40
20
0
0
50
100
150
200
44
100
43
90
42
41
80
70
Pout
40
60
39
50
38
40
PAE
37
36
30
20
35
10
34
0
28
Case Temperature [ o C]
30
32
34
36
Power Added Efficiency (%)
POWER DERATING CURVE
38
40
Input Power (dBm)
OUTPUT POWER vs. FREQUENCY
IMD vs OUTPUT POWER
Vds=10V, IdsDC=4.0A
Vds=10V, IdsDC=4.0A
f1=14.50GHz, f2=14.51GHz
Output Power [dBm]
42
40
P1dB
27dBm
38
31dBm
35dBm
38dBm
36
34
32
13.50
Intermodulation Distortion [dBc]
44
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
IM3
IM5
30
13.75
14.00
14.25
14.50
31
32
33
34
35
36
37
14.75
Output Power (S.C.L.) [dBm]
Frequency [GHz]
2
38
FLM1314-18F
X,Ku-Band Internally Matched FET
■ S-PARAMETERS
+90°
+50j
+100j
+25j
10Ω
13.75GHz
14.125
13.75GHz
14.125
+250j
Scale for |S 21|
14.5
∞
0
±180° 3
14.5
13.75GHz
14.5
2
0°
13.75GHz
14.5
14.125
-250j
-10j
14.125
-25j
-100j
-50j
S11
0.2
-90°
S22
Scale for | S 12|
+10j
S12
S21
VDS=10.0V , IDS=4.0A
FREQ.(GHz)
13.5
13.6
13.7
13.8
13.9
14.0
14.1
14.2
14.3
14.4
14.5
14.6
14.7
S11mag
0.462
0.394
0.328
0.255
0.189
0.130
0.099
0.115
0.158
0.209
0.254
0.308
0.360
S11ang
-154.1
-163.2
-173.9
172.6
156.0
129.2
85.1
38.8
8.7
-13.0
-30.8
-48.6
-66.5
S21mag
1.909
1.976
2.026
2.059
2.093
2.105
2.111
2.105
2.095
2.090
2.089
2.061
2.028
S21ang
51.8
30.0
7.7
-14.9
-37.5
-59.9
-82.7
-105.5
-128.4
-151.2
-174.2
161.8
137.5
3
S12mag
0.099
0.103
0.107
0.109
0.112
0.114
0.114
0.115
0.115
0.115
0.114
0.112
0.110
S12ang
41.8
21.9
1.5
-18.8
-39.3
-59.9
-80.4
-100.7
-121.2
-142.0
-162.8
176.1
154.2
S22mag
0.402
0.420
0.434
0.443
0.452
0.455
0.449
0.439
0.418
0.392
0.362
0.320
0.274
S22ang
115.1
101.9
89.3
77.7
67.7
58.0
50.5
44.0
38.0
34.0
29.6
29.6
31.7
FLM1314-18F
X,Ku-Band Internally Matched FET
■ Package Out Line
Case Style : IB
Unit : mm
PIN ASSIGNMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
4
FLM1314-18F
X,Ku-Band Internally Matched FET
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Eudyna Devices Compound Semiconductor Products contain gallium
arsenide (GaAs) which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
・
Do not put these products into the mouth.
・
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts
are dangerous to the human body if inhaled, ingested, or swallowed.
・
Observe government laws and company regulations when discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong
Tel: +852-2377-0227
Fax: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
Tel +81-55-275-4411
Fax +81-55-275-9461
Sales Division
1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan
Tel +81-45-853-8156
Fax +81-45-853-8170
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