FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=26%(Typ.) ・Broad Band: 14.0～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM1414-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) Item Symbol Rating Unit 15 V Drain-Source Voltage VDS Gate-Source Voltage VGS -5 V Total Power Dissipation PT 75 W Storage Temperature Tstg -65 to +175 Channel Temperature Tch 175 C o C o RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Item Symbol DC Input Voltage VDS Forward Gate Current IGF Reverse Gate Current IGR Condition Unit Limit ≦10 V RG=50Ω ≦48 mA RG=50Ω ≧-6.6 mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Test Conditions VDS=5V , VGS=0V Min. - Limit Typ. 7.2 Max. 10.0 6700 - Unit A Drain Current IDSS Transconductance gm VDS=5V , IDS=3600mA - Pinch-off Voltage Vp VDS=5V , IDS=300mA -0.5 -1.5 -3.0 Gate-Source Breakdown Voltage VGSO IGS=-340µA -5.0 - - V Output Power at 1dB G.C.P. P1dB 41.5 42.0 - dBm Power Gain at 1dB G.C.P. G1dB 5.0 6.0 - dB mA Idsr Drain Current Power-added Efficiency ηadd Gain Flatness ∆G VDS=10V f=14.0 - 14.5 GHz IDS=0.6IDSS(typ) Zs=ZL=50Ω 3rd Order Intermodulation Distortion IM3 f=14.5 GHz Δf=10MHz,2-Tone Test Pout=30.0dBm(S.C.L.) Thermal Resistance Rth Channel to Case Channel Temperature Rise CASE STYLE: IB ESD Class III ∆ Tch V - 4200 5000 - 26 - % - - 1.2 dB dBc -42.0 -45.0 - - 1.8 2.0 - - 80 C /W o oC 10V x Idsr X Rth G.C.P.:Gain Compression Point , S.C.L.:Single Carrier Level 2000V~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.4 May 2004 mS 1 FLM1414-15F X,Ku-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER , EFFICIENCY vs. INPUT POWER 100 45 90 60 40 20 80 40 70 60 35 50 40 30 30 20 0 10 0 50 100 150 200 25 Case Temperature [ oC] 0 20 25 30 35 40 Input Power Level [dBm] OUTPUT POWER vs. FREQUENCY IMD vs OUTPUT POWER VDS=10V, IDS=0.65IDSS VDS=10V, IDS=0.65IDSS 40 35 30 25 13.9 f1=14.50GHz, f2=14.51GHz -36 14.0 14.1 14.2 14.3 14.4 14.5 14.6 Intermodulation Distortion [dBc] Output Power [dBm] 45 -38 -40 -42 IM 3 -44 -46 -48 -50 -52 IM 5 -54 -56 -58 -60 frequency [GHz] Pin=23dBm Pin = 27dBm Pin=31dBm Pin=33dBm Psat P1dB 24 25 26 27 28 29 30 31 32 Output Power (S.C.L.) [dBm] S.C.L :Single Carrier Level 2 33 34 Efficiency [%] Output Power Level [dBm] Total Power Dissipation [W] 80 FLM1414-15F X,Ku-Band Internally Matched FET ■ S-PARAMETER +90° +50j +25j 14.25 10 Ω +100j 25 +1 0j 14.5 +250 j 14G H z ± 180° 3 ∞ 14G H z -25 0j -10j -25j 1 Scale for |S 21| 14.5 0.4 14.25 -100j -50 j 0° Scale for |S 12| 0 14GH z 0.6 -90° S 11 S 22 VDS=10V, IDS=4355mA Freq [GHz] 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 S11 MAG ANG 0.883 78.074 0.842 6.384 0.805 -68.624 0.729 -155.313 0.553 118.032 0.301 14.254 0.193 -169.602 0.330 57.246 0.373 -69.708 0.400 -173.403 0.529 119.056 S21 MAG ANG 0.679 -162.875 0.812 115.730 1.046 32.823 1.503 -65.968 1.922 -168.885 2.153 84.943 2.182 -30.677 1.987 -141.198 1.440 104.525 0.733 2.596 0.486 -75.751 3 S12 MAG ANG 0.023 158.196 0.029 77.861 0.040 -0.870 0.064 -91.628 0.092 170.080 0.108 68.684 0.114 -35.708 0.113 -134.062 0.082 126.406 0.045 48.953 0.034 -13.903 S22 MAG ANG 0.757 36.902 0.708 -38.816 0.612 -118.143 0.455 143.005 0.308 23.310 0.285 -105.214 0.308 146.159 0.243 62.332 0.118 45.259 0.247 10.815 0.293 -37.756 S 12 S 21 FLM1414-15F X,Ku-Band Internally Matched FET CASE STYLE: IB PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM1414-15F X,Ku-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 5