FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm (Typ.) • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 4.16 W Total Power Dissipation PT Tc = 25°C Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch +175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with gate resistence of 400Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Conditions Min. Limits Typ. Max. Unit Drain Current IDSS VDS = 5V, VGS=0V - 300 450 mA Transconductance gm VDS = 5V, IDS=200mA - 150 - mS Pinch-Off Voltage Vp VDS = 5V, IDS=15mA -1.0 -2.0 -3.5 V IGS = -15µA -5 - - V 28.5 29.5 - dBm 13.5 14.5 - dB - 47 - % - 25 36 °C/W Gate-Source Breakdown Voltage VGSO Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Power Added Efficiency ηadd VDS = 10V f=2.0 GHz IDS=0.6IDSS Thermal Resistance Rth Channel to Case Case Style: XM G.C.P.: Gain Compression Point Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested. Edition 1.2 July 1999 1 FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Drain Current (mA) 4 3 2 1 VGS =0V 300 -0.5V 200 -1.0V 100 -1.5V -2.0V 50 100 150 0 200 2 4 6 OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.6IDSS f = 2.0 GHz 30 50 28 Pout 26 40 24 30 22 20 ηadd 10 20 8 8 10 Drain-Source Voltage (V) Case Temperature (°C) 10 12 14 16 Input Power (dBm) 2 18 ηadd (%) 0 Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High Power GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 0.5 GHz 1 +j250 +j10 4 0 25 50Ω 100 180° 250 8 6 4 2 SCALE FOR |S21| 3 0.5 GHz -j250 1 3 -j25 SCALE FOR |S12| 2 2 1 0.5 GHz -j100 3 1 4 3 0° 5 5 -j10 2 0.5 GHz 5 5 .05 0.1 -90° -j50 S11 S-PARAMETERS VDS = 10V, IDS = 180mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG S22 100 1.000 -17.7 11.904 167.3 .005 78.4 .535 -9.1 MAG ANG 500 .922 -76.7 9.080 123.4 .020 43.2 .511 -46.1 1000 .864 -118.5 5.928 88.3 .026 14.5 .536 -74.7 1500 .841 -140.9 4.153 64.2 .028 4.8 .594 -94.0 2000 .825 -154.9 3.121 45.1 .028 -3.7 .654 -108.7 2500 .809 -164.9 2.498 28.4 .028 -12.0 .709 -120.9 3000 .783 -173.1 2.097 13.1 .028 -16.9 .755 -131.4 3500 .746 179.4 1.833 -1.9 .031 -20.5 .794 -140.9 4000 .692 172.0 1.655 -17.3 .034 -28.4 .830 -149.5 4500 .615 164.1 1.529 -33.6 .037 -36.3 .861 -157.3 5000 .507 156.6 1.429 -51.3 .042 -48.5 .886 -164.5 Download S-Parameters, click here 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic Package 2.865 (0.112) 0.5 (0.020) 3.8±0.15 (0.150) 2.265 (0.089) 3.35 (0.132) 2.0±0.15 4.2±0.1 (0.165) 3 0.5 (0.020) 45° 4.4±0.15 (0.173) 1 4.0±0.15 (0.159) 0.7 (0.028) 2 3.13±0.15 0.7 (0.028) 1. Gate 2. Source 3. Drain 0.15±0.05 (0.006) 1.7±0.2 (0.067) 6.3 (0.248) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4