FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm(typ.) ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Symbol Rating Unit Drain-Source Voltage Item VDS 15 V Gate-Soutce Voltage VGS -5 V Total Power Dissipation PT 6.9 W Storage Temperature Tstg -55 to +150 ℃ Channel Temperature TCH 175 ℃ Recommended Operating Condition (Case Temperature Tc=25℃) Item DC Input Voltage Channel Temperature Symbol Condition Unit VDS ≤ 10 V Tch ≤ 145 ℃ Forward Gate Current Igsf ≤ 4.8 mA Reverse Gate Current Igsr ≥-0.5 mA Gate Resistance Rg 400 Ω ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) Item Test Conditions Symbol Drain Current VDS=5V, VGS=0V Min. Limit Typ. Max. Unit Transconductance gm VDS=5V, IDS=200mA - 150 - mA mS Pinch-off Voltage Vp VDS=5V, IDS=15mA -1.0 -2.0 -3.5 V - - V IDSS - 300 450 Gate-Source Breakdown Voltage VGSO IGS=-15uA -5 Output Power at 1dB G.C.P. P1dB 28.5 29.5 - dBm Power Gain at 1dB G.C.P. G1dB VDS=10V, f=2.0GHz, IDS=0.6IDSS(Typ.) 12.0 13.0 - dB Rth Channel to Case - 15 18 Thermal Resistance ℃/W G.C.P.:Gain Compression Point CASE STYLE: ZM Note 1: Product supplied to this specification are 100% DC performance tested. Note 2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot. Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested. ESD Class Ⅱ 500～ 1999 V Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kΩ) Edition 1.1 May 2003 1 FLU10ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Total Power Dissipation [W] 7 6 5 4 3 2 1 0 0 50 100 150 200 Case Temperature [℃ ] OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER f = 2.0GHz, VDS = 10V, IDS = 0.6IDSS 100 34 80 Output Power [dBm] 30 28 Pout 26 60 24 22 40 20 P.A.E. 18 20 16 14 0 2 4 6 8 10 12 14 16 18 20 Input Power [dBm] 2 Power Added Efficiency [%] 32 FLU10ZM L-Band Medium & High Power GaAs FET ■ S-PARAMETER +50 j 10 Ω 25 Ω 50 Ω +10j 1.0 +2 50j 3.0 2.0GHz 100 Ω 0 2.0G H z ∞ 3.0 ±180° 15 2.0G H z -250 j 1.0 0.4 -25j 0° Scale for |S 21| 1.0 -10j 3.0 9 -100 j 0.6 -90° S 11 -50j Scale for |S 12| +25 j +90° +1 00j S 12 S 21 S 22 VDS = 10V, IDS = 180mA Freq [GHz 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 S11 MAG 0.88 0.78 0.75 0.72 0.71 0.69 0.73 0.76 0.79 0.80 ANG -82.82 -128.10 -153.80 -174.63 165.70 145.11 126.72 112.29 100.63 93.48 S21 MAG 9.02 5.90 4.31 3.45 2.85 2.41 2.05 1.74 1.48 1.25 S12 ANG 126.68 96.81 76.65 60.18 43.48 27.24 11.34 -3.63 -17.87 -30.30 3 MAG 0.05 0.06 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 ANG 48.61 27.98 19.62 13.94 8.34 4.74 -1.38 -7.63 -13.21 -16.94 S22 MAG 0.37 0.30 0.27 0.25 0.22 0.20 0.19 0.22 0.27 0.34 ANG -52.39 -78.22 -91.11 -101.36 -114.34 -128.63 -153.74 179.95 161.06 146.70 FLU10ZM L-Band Medium & High Power GaAs FET OUTPUT POWER & DRAIN CURRENT vs. INPUT POWER with a wide band tuning condition. @ VDS = 10V, IDS = 150mA, VGS = -0.9V Pin-Pout, Ids & P.A.E. @f=1.8GHz Pin-Pout, Ids & P.A.E. @f=2.0GHz 25 220 20 180 15 140 10 100 4 6 75 50 25 0 8 10 12 14 16 18 20 22 24 26 Pout Ids[mA] P.A.E. 30 260 75 25 220 20 180 15 140 25 10 100 0 4 Input Power [dBm] 6 50 Power Added Efficiency[%] 260 Output Power [dBm] 30 300 35 Power Added Efficiency[%] Pout Ids[mA] P.A.E. Drain Current [mA] 300 Drain Current [mA] Output Power [dBm] 35 8 10 12 14 16 18 20 22 24 26 Input Power [dBm] OUTPUT POWER vs. FREQUENCY Pin-Pout, Ids & P.A.E. @f=2.2GHz 300 220 20 180 15 140 10 100 4 6 75 50 25 0 Output P ow er [dB m] 25 Pin=25dBm Pin=20dBm P1dB 260 Power Added Efficiency[%] Pout Ids[mA] P.A.E. 30 35 Drain Current [mA] Output Power [dBm] 35 30 Pin=15dBm 25 Pin=10dBm 20 Pin=5dBm 15 8 10 12 14 16 18 20 22 24 26 1.7 1.9 2.1 Frequency[GHz] Input Power [dBm] 4 2.3 FLU10ZM L-Band Medium & High Power GaAs FET @ VDS = 10V, IDS = 150mA, VGS = -0.9V W-CDMA 2-CARRIER IMD(ACLR) IMD vs OUTPUT POWER(2-tone) *fo=2.1325GHz *f1=2.1475GHz -30 -35 -25 1.8GHz 2.0GHz 2.2GHz -40 IM3-L IM3-U IM5-L IM5-U -30 ACLR(IMD) [dBc] Intermodulation Distortion [dBc] -25 IM3 -45 -50 -55 IM5 -60 -35 -40 -45 -50 -55 -65 -60 -70 15 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 17 18 *fo=2.1325GHz 21 22 *fo=2.1325GHz 15 14 -5MHz +5MHz -10MHz +10MHz 13 CCDF,Gain [dB] ACLR [dBc] -35 20 -40 -45 -50 12 11 10 9 8 0.01% Peak 7 -55 Gain 6 -60 15 16 17 18 19 20 21 22 23 24 25 26 5 12 Output Power[dBm] 17 22 Output Power [dBm] Note : *All signals are W-CDMA modulated at 3GPP3.4.12-00 BS-1 64ch non clipping. All data was obtained using the board tuned for wide band tuning (1.8 GHz to 2.3 GHz). 5 23 24 25 W-CDMA SINGLE CARRIER CCDF AND GAIN -25 -30 19 2-tone total Output Power [dBm] Output Power(2-tone) [dBm] @∆f=+5MHz W-CDMA SINGLE CARRIER ACLR 16 FLU10ZM L-Band Medium & High Power GaAs FET ■ Recommended Bias Circuit and Internal Block Diagram (wide band tuning condition) <Board information> εr=3.5, t=0.8 Unit : mm * Board was tuned for wide band performance with data shown on pages 4 and 5. 6 FLU10ZM L-Band Medium & High Power GaAs FET ■ Package Outline 7 FLU10ZM L-Band Medium & High Power GaAs FET For further information please contact : FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. . FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0202M200 8