FMM5118X 20-32GHz Doubler MMIC FEATURES • Integrated Monolithic Doubler • High Harmonic Rejection • Single Supply Voltage • High Reliability DESCRIPTION The FMM5118X is a doubler, consisting of an X2 multiplier followed by a buffer amplifier for applications with an output frequency of 20 to 32 GHz. This doubler is uniquely suited for point-to-point radios, local multi-point distribution systems (LMDS) and satellite communications, as it offers a high dynamic range over a large bandwidth. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Symbol VDD1,2 Rating 8 Unit V Input Power Pin 10 dBm Storage Temperature Tstg -65 to +175 °C DC Supply Voltage RECOMMENDED OPERATING CONDITIONS Item DC Supply Voltage Input Drive Power Operating Backside Temperature Symbol Pin Min. 3.0 0.0 Tbs -45 VDD1,2 Recommend Typ. - Unit 3.0 Max. 6.0 5.0 V dBm 25 110 °C Note 1: This product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Conditions Min. Limits Typ. Max. 16 Unit Input Frequency Range Output Frequency Range fin 10 fout 20 - 32 GHz Output Power Pout 14 18 20 dBm Conversion Gain Gc 11 14 17 dB Conversion Gain Flatness ∆G - 2.5 - dB - 15 - dB - 25 - dB VDD1,2=5V, Pin=3dBm GHz Input Return Loss Fundamental Rejection RLin RJ1st 3rd Harmonic Rejection RJ3rd - 30 - dB DC Current Consumption IDC - 100 150 mA RF Current Consumption IRF - 140 200 mA Note 1: The electrical characteristics are measured on a sample basis at 10pcs./wafer. Criteria: (accept/reject)=(0/1) Edition 1.2 May 2003 1 FMM5118X 20-32GHz Doubler MMIC VDD-Output Power Dependency OUTPUT POWER vs. FREQUENCY 30 25 VDD1,2=5V, Pin=3dBm Fundamental (fo) 2nd Harmonic (2 x fo) 19 18 15 17 Output Power (dBm) Output Power (dBm) 3rd Harmonic (3 x fo) 20 10 5 0 -5 -10 -15 16 15 14 Pin=3dBm 13 12 -20 Pout@VDD1,2=6V Pout@VDD1,2=5V Pout@VDD1,2=4V 11 -25 9 10 11 12 13 14 15 16 17 9 10 Input Frequency (GHz) 13 14 15 16 17 RF CURRENT vs. FREQUENCY Pin= VDD1,2=5V, Pin=3dBm 0dBm 1dBm 2dBm 3dBm 4dBm 5dBm 20 160 RF Current (IRF) (mA) Output Power (2 x fo) (dBm) 12 Input Frequency (GHz) OUTPUT POWER vs. FREQUENCY VDD1,2=5V 11 15 150 140 130 10 120 5 9 10 11 12 13 14 15 16 17 9 Input Frequency (GHz) 10 11 12 13 14 15 Input Frequency (GHz) 2 16 17 FMM5118X 20-32GHz Doubler MMIC SMALL SIGNAL RETURN LOSS vs. FREQUENCY 0 S22 VDD1,2=5V, Pin=-10dBm Input/Output Return Loss (dB) –5 –10 S11 –15 –20 –25 5 10 15 20 25 30 35 40 Frequency (GHz) Block Diagram VGG=0V (GND) fo IN X2 VDD1=5V VDD2=5V 3 2 x fo OUT FMM5118X 20-32GHz Doubler MMIC Bonding Diagram VGG=GND 2 x fo OUT fo IN 0.15µF C=220pF VDD=5V 4 FMM5118X 20-32GHz Doubler MMIC Notes: 5 FMM5118X 20-32GHz Doubler MMIC CHIP OUTLINE Unit: µm 2030 Chip Size: 2.14mm x 2.03mm Chip Thickness: 110µm (Typ.) Pad Dimensions: 1. fo IN: 80 x 160µm 2. VGG: 100 x 100µm 3. 2x fo OUT: 80 x 160µm 4. VDD1: 100 x 100µm 5. VDD2: 80 x 80µm 1760 VGG 675 2x fo OUT 440 fo IN 180 170 0 VDD1 0 170 185 VDD2 730 880 2005 2140 For further information please contact: CAUTION FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0502M200 6