FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm (Typ.) •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three stage amplifier, internally matched, for standard communications band in 17.5 to 20.0GHz frequency range. This product is well suited for point-to-point radio applications. Device photo Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Strage Temperature Stmbol VDD VGG Pin Tstg Condition RECOMMENDED OPERATING CONDITIONS Item Symbol Condition Drain-Source Voltage VDD Input Power Pin Operating Backside Temperature Top * : FMM5822X/001 Recommended Drain-Source Voltage VDD≦8V This Product should be hermetically packaged. Rating 10 -3 25 -55 to +125 Unit V V dBm ℃ Recommended ≦7* 15 -40 to +85 Unit V dBm ℃ ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25℃) Limits Unit Min. Typ. Max. Frequency Range f VDD=6.0V 17.5 20 GHz Output Power at 1dB G.C.P. P1dB IDD(DC)=850mA typ. 30.5 32.5 dBm Power Gain at 1dB G.C.P. G1dB Zs=Zl=50ohm 19 21 25 dB Power Added Efficiency at 1dB G.C.P. Nadd 30 % Third Order Intermodulation IM3* *df=10MHz,Po=20.5dBm -38 -41 dBc Drain Current at 1dB G.C.P. Iddrf 1000 1500 mA (S.C.L.) Input Return Loss at Pin=-20dBm RLin -8 dB Output Return Loss at Pin=-20dBm RLout -12 dB Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1) G.C.P. : Gain Compression Point S.C.L. : Single Carrier Level Item Symbol Test Conditions ESD Class 0 Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 2.1 November 2004 1 ~ 199V FMM5822X K-Band Power Amplifier MMIC Output Power vs. Frequency Output Power, Drain Current vs. Input Power VDD=6V, IDD(DC)=850mA VDD=6V, IDD(DC)=850mA 34 Pin = 12dBm 31 P1dB 29 Pin = 8dBm 27 Pin = 4dBm Pin = 0dBm 1400 30 1300 28 1200 Pout 26 1100 24 1000 Drain Current 22 900 19 20 800 17 18 21 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 VDD=6V, IDD(DC)=850mA 35 30 Pin = 12dBm 25 P1dB 20 15 Pin = 8dBm 10 Pin = 4dBm 5 Pin = 0dBm 17 17.5 18 18.5 19 19.5 -2 0 2 4 6 8 10 Input Power [dBm] Power Added Efficiency vs. Frequency 0 16.5 700 -4 Frequency [GHz] Power Added Efficiency [%] 17.5GHz 18.5GHz 20GHz 32 25 23 1500 20 20.5 21 Frequency [GHz] 2 12 14 16 Drain Current [mA] 33 Output Power [dBm] Output Power [dBm] 35 FMM5822X K-Band Power Amplifier MMIC IMD vs. Output Power IMD vs. Frequency VDD=6V, IDD(DC)=850mA VDD=6V, IDD(DC)=850mA, Pout=20dBm S.C.L. -15 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -30 -35 -40 IM3 -45 -50 IM5 -55 17.5GHz 18.5GHz 20GHz -20 -25 -30 -35 -40 IM3 -45 -50 -55 -60 IM5 -60 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 21.5 14 Frequency [GHz] 16 18 20 22 24 26 28 2-tone Total Output Power [dBm] 3 30 32 FMM5822X K-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Voltage Output Power, Drain Current vs. Input Power by Drain Voltage IDD(DC)=850mA, f=18.5GHz IDD(DC)=850mA, f=17.5GHz 34 1400 32 30 1300 28 1200 26 1100 Pout 1300 28 1200 Pout 26 1100 24 1000 900 1000 22 900 22 800 20 800 Drain Current Drain Current 18 700 -4 -2 0 2 4 6 8 10 12 14 18 16 700 -4 -2 0 4 6 8 10 12 14 16 Input Power [dBm] Output Power, Drain Current vs. Input Power by Drain Voltage Output Power, Gain vs. Drain Voltage IDD(DC)=850mA 36 36 1600 4V 5V 6V 7V 8V a 34 1400 30 1300 28 1200 Pout 26 1100 P1dB [dBm] 32 32 26 31 20 800 700 25 6 8 10 12 14 23 G1dB Drain Current 4 24 29 900 2 25 P1dB 30 22 0 28 27 1000 18 29 33 24 -2 30 17.5GHz 18.5GHz 20GHz 35 1500 Drain Current [mA] 34 Output Power [dBm] 2 Input Power [dBm] IDD(DC)=850mA, f=20.0GHz -4 1400 30 24 20 1500 16 28 22 27 21 26 20 19 3 Input Power [dBm] 4 5 6 VDD [V] 4 7 8 9 G1dB [dB] Output Power [dBm] 32 1500 Output Power [dBm] 34 1600 4V 5V 6V 7V 8V a Drain Current [mA] 1600 4V 5V 6V 7V 8V 2 Drain Current [mA] 36 36 FMM5822X K-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Current Output Power, Drain Current vs. Input Power by Drain Current VDD=6V, f=18.5GHz VDD=6V, f=17.5GHz 650mA 850mA 1050mA 30 1700 30 1700 28 1500 28 1500 1300 22 900 700 20 -2 0 2 4 6 8 10 Input Power [dBm] 12 14 500 18 -2 0 2 4 6 8 10 12 14 16 Input Power [dBm] Output Power, Drain Current vs. Input Power by Drain Current Output Power, Gain vs. Drain Current VDD=6V, f=20.0GHz VDD=6V 34 2100 650mA 850mA 1050mA 36 35 1900 34 30 1700 28 1500 Pout 26 1300 24 1100 22 900 20 700 Drain Current 18 0 2 4 6 8 10 12 29 28 27 32 26 P1dB 31 25 30 24 29 23 G1dB 28 22 27 21 26 20 25 500 -2 30 17.5GHz 18.5GHz 20GHz 33 P1dB [dBm] 32 -4 500 -4 16 700 Drain Current 600 14 16 19 700 800 900 IDD(DC) [mA] Input Power [dBm] 5 1000 1100 G1dB [dB] -4 1300 900 22 18 Pout 26 1100 1100 Drain Current 1900 24 24 20 Drain Current [mA] Pout 26 Output Power [dBm] 32 Drain Current [mA] Output Power [dBm] 2100 650mA 850mA 1050mA 1900 32 Output Power [dBm] 34 2100 Drain Current [mA] 34 FMM5822X K-Band Power Amplifier MMIC IMD vs. Output Power by Drain Voltage IMD vs. Output Power by Drain Voltage IDD(DC)=850mA, f=18.5GHz IDD(DC)=850mA, f=17.5GHz -15 4V 5V 6V 7V 8V a -20 -25 -30 -35 -40 -45 IM3 -50 IM5 -55 -25 -30 -35 -40 IM3 -45 -50 IM5 -55 -60 -60 14 16 18 20 22 24 26 28 30 32 14 2-tone Total Output Power [dBm] IDD(DC)=850mA, f=20.0GHz -15 4V 5V 6V 7V 8V a -20 -25 -30 -35 -40 -45 IM3 -50 -55 IM5 -60 14 16 18 20 22 24 26 28 16 18 20 22 24 26 28 30 2-tone Total Output Power [dBm] IMD vs. Output Power by Drain Voltage Intermodulation Distortion [dBc] 4V 5V 6V 7V 8V a -20 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -15 30 32 2-tone Total Output Power [dBm] 6 32 34 FMM5822X K-Band Power Amplifier MMIC IMD vs. Output Power by Drain Current IMD vs. Output Power by Drain Current VDD=6V, f=18.5GHz VDD=6V, f=17.5GHz -15 -15 650mA 850mA 1050mA -25 -30 -35 -40 IM3 -45 IM5 -50 -55 -25 -30 -35 -40 IM3 -45 IM5 -50 -55 -60 -60 14 16 18 20 22 24 26 28 30 32 14 2-tone Total Output Power [dBm] VDD=6V, f=20.0GHz -15 650mA 850mA 1050mA -20 -25 -30 -35 -40 -45 IM3 IM5 -50 -55 -60 14 16 18 20 22 24 26 28 16 18 20 22 24 26 28 2-tone Total Output Power [dBm] IMD vs. Output Power by Drain Current Intermodulation Distortion [dBc] 650mA 850mA 1050mA -20 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -20 30 32 2-tone Total Output Power [dBm] 7 30 32 FMM5822X K-Band Power Amplifier MMIC Sxx [dB] ■S-PARAMETER 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 S21 S11 S22 0 5 10 15 20 25 30 Sxx [dB] Frequency [GHz] 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 S21 S11 S22 16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 Frequency [GHz] 8 FMM5822X K-Band Power Amplifier MMIC ■S-PARAMETER VDD=6V, IDD=850mA Frequency [GHz] 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 17.1 17.2 17.3 17.4 17.5 17.6 17.7 17.8 17.9 18.0 18.1 18.2 18.3 18.4 18.5 18.6 18.7 18.8 18.9 19.0 19.1 19.2 19.3 19.4 19.5 19.6 19.7 19.8 19.9 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 S11 MAG ANG 0.98 -27.0 0.97 -52.2 0.94 -73.4 0.93 -91.8 0.93 -108.1 0.93 -122.9 0.93 -137.6 0.87 -153.7 0.79 -163.6 0.75 -173.6 0.71 175.2 0.66 162.3 0.59 147.3 0.50 128.4 0.40 103.9 0.33 70.4 0.37 16.9 0.39 11.1 0.39 4.6 0.41 -1.2 0.42 -7.4 0.43 -12.8 0.45 -18.9 0.46 -24.9 0.48 -30.1 0.49 -36.5 0.51 -41.6 0.52 -47.4 0.53 -52.5 0.55 -57.9 0.55 -63.4 0.57 -68.9 0.57 -74.4 0.57 -79.3 0.58 -85.3 0.57 -89.9 0.57 -94.9 0.57 -100.3 0.56 -104.8 0.56 -110.0 0.54 -115.1 0.54 -120.1 0.52 -125.2 0.51 -130.1 0.49 -136.3 0.47 -141.0 0.46 -147.8 0.33 70.0 0.73 -36.9 0.85 -75.1 0.87 -94.6 0.87 -107.0 0.87 -115.5 0.87 -122.5 0.86 -127.7 0.86 -131.8 0.87 -135.6 S21 MAG ANG 0.10 43.4 0.36 -145.5 0.10 145.9 0.16 123.0 0.26 163.1 0.55 83.8 0.61 45.3 0.76 0.4 0.97 -38.0 1.22 -78.6 1.58 -117.2 2.16 -157.4 3.11 158.4 4.60 108.1 6.75 51.6 9.61 -11.8 12.43 -82.7 12.66 -89.6 13.01 -97.0 13.24 -104.4 13.56 -111.8 13.78 -119.8 14.07 -127.1 14.38 -135.3 14.50 -143.1 14.90 -151.0 14.96 -159.6 15.18 -167.5 15.31 -176.4 15.27 175.8 15.43 166.9 15.25 158.8 15.34 150.6 15.23 141.9 15.22 134.1 15.19 125.4 15.03 116.9 15.02 108.4 14.75 99.5 14.55 91.4 14.36 82.9 14.07 75.0 14.01 66.9 13.78 58.4 13.76 50.5 13.64 41.4 13.54 33.1 11.17 -70.5 4.27 174.8 0.84 90.0 0.11 45.9 0.02 88.6 0.02 91.1 0.02 57.6 0.02 36.7 0.02 0.2 0.02 -20.5 9 S12 MAG ANG 0.00 -106.0 0.00 -128.4 0.00 -87.5 0.00 -108.9 0.00 -111.3 0.00 -95.4 0.00 -81.8 0.00 -62.2 0.00 -80.7 0.00 -104.3 0.00 -131.4 0.00 173.8 0.00 -42.1 0.00 -25.2 0.00 -39.4 0.00 -40.1 0.01 -48.2 0.01 -47.9 0.01 -53.1 0.01 -53.3 0.01 -53.6 0.01 -59.5 0.01 -57.0 0.00 -70.9 0.01 -67.3 0.01 -72.1 0.01 -84.9 0.01 -78.6 0.01 -80.5 0.01 -77.5 0.01 -83.1 0.01 -97.7 0.01 -97.8 0.01 -101.9 0.01 -112.6 0.01 -110.9 0.01 -114.1 0.01 -127.0 0.01 -121.8 0.00 -141.5 0.00 -148.2 0.01 -138.9 0.00 -158.6 0.00 -174.6 0.00 155.8 0.00 133.3 0.00 104.2 0.01 -1.2 0.01 -60.8 0.00 -81.5 0.00 49.0 0.01 -11.8 0.01 -41.2 0.01 -21.4 0.01 -1.4 0.02 -13.2 0.02 -30.0 S22 MAG ANG 0.99 -44.1 0.94 -80.3 0.92 -102.7 0.96 -121.7 0.98 -137.4 0.98 -150.8 0.97 -162.1 0.96 -172.0 0.95 177.9 0.93 167.5 0.90 156.2 0.86 142.7 0.79 125.8 0.66 103.2 0.45 72.4 0.20 25.0 0.13 -93.4 0.14 -104.1 0.15 -112.5 0.16 -119.7 0.17 -126.9 0.19 -132.7 0.20 -140.4 0.21 -146.6 0.21 -153.6 0.22 -159.3 0.22 -164.7 0.23 -170.8 0.23 -176.3 0.24 178.5 0.24 172.8 0.23 166.8 0.23 160.6 0.22 154.6 0.21 151.1 0.20 144.4 0.19 138.4 0.18 132.5 0.17 126.5 0.16 119.3 0.14 114.1 0.13 109.6 0.11 100.4 0.10 92.9 0.08 80.4 0.06 70.4 0.05 63.2 0.08 15.6 0.37 -24.4 0.61 -68.8 0.70 -95.2 0.73 -111.2 0.76 -122.1 0.78 -130.6 0.79 -137.9 0.81 -143.8 0.83 -149.6 FMM5822X K-Band Power Amplifier MMIC ΔTch vs. Drain Voltage (Reference) IDD(DC)=900mA 80 70 Δ Tch [℃ ] 60 50 40 30 20 10 0 4 5 6 7 8 9 VDD [V] MTTF [ hrs ] MTTF vs. Tch 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E+01 Ea=1.56eV 50 100 150 o Tch [ C ] 10 200 250 FMM5822X K-Band Power Amplifier MMIC ■ Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) 0 120 VGG1 VDD2 620 1155 VDD4 3075 3450 3570 2760 2640 2760 2555 2510 1380 R F - O U T RF-IN 1194 280 205 250 120 0 0 0 120 636 750 1155 3075 3450 3570 VDD5 V D D 1 (V G G 2 ) V D D 3 Chip Size : 3570 ±30um x 2760±30um Chip Thickness : 70±20um Bonding Pad Size : RF-Pad : 120um x 80um VGG-Pad : 80um x 80um VDD-Pad : 100um x 100um Ｎｏｔ ｅ: Gate voltage is required from either or both bonding pad( VGG1 or/and VGG2). 11 FMM5822X K-Band Power Amplifier MMIC ■ Assembly Diagrams Recommended assembly 1 uF 100pF 100pF 100pF 1 uF VDD VGG 50ohm Line 50ohm Line VDD 100pF 100pF 100pF 1 uF “Copper” is the recommended material for the package or carrier. 12 FMM5822X K-Band Power Amplifier MMIC ■DIE ATTACH 1) The die-attach station must have accurate temperature control and an inert forming gas should be used. 2) Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature : 300 to 310 deg.C Time : less than 15 seconds AuSn Preform Volume : per next Figure Volume of Au-Sn Perform (10 -3 /mm3) 2500 2000 FMM5822X 1500 1000 500 0 0 2 4 6 8 10 12 14 16 18 20 Area of Chip Bach Surface (mm^2) ■ WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 7400 (Manual Bonder) Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N ± 0.0196 N Stage Temperature : 215 deg.C ± 5 deg.C Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond 13 FMM5822X K-Band Power Amplifier MMIC For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 14