P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram · Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure Pin No. 1 2, 4 3 Function Input/Gate Ground Output/Drain 1 2 3 ♦Ordering Information ♦Applications · Wireless communication system · Cellular, PCS, PHS, W-CDMA, WLAN Part No Description Number of devices Container P0120009P GaAs Power FET 2.11-2.17GHz Application Circuit 1000 7” Reel Anti-static Bag KP029J ♦Description 1 ♦Absolute Maximum Ratings (@Tc=25°C) P0120009P is a high performance GaAs MESFET housed in a low-cost SOT-89 package. Our originally developed "pulse-doped" channel structure has realized low distortion, which leads to high IP3. The channel structure also achieved an extremely low noise figure. The details about pulse-doped FET channel are described in our products catalog. Utilization of AuSn die attach has realized a low and stable thermal resistance. The lead frame is plated with Sn-Bi to make the device Pb-free. SEI’s long history of manufacturing has cultivated high device reliability. The estimated MTTF of the FET is longer than 15years at Tj of 150°C. You can see the details in Reliability and Quality Assurance. Parameter Symbol Value Units Drain-Source Voltage Vds 10 V Gate-Source Voltage Vgs -4 V Drain Current Ids Idss --RF Input Power (*) Pin 23 dBm (continuous) Power Dissipation Pt 5.43 W (**) Junction Temperature Tj 150 °C Storage Temperature Tstg - 40 to +150 °C Tc: Case Temperature. Operating the device beyond any of these values may cause permanent damage. (*) Measured at 2.1GHz with our test fixture matched to IP3. (**) Recommended Tj under operation is below 125°C. ♦Electrical Specifications (@Tc=25°C) Parameter DC Max. Vds=3V, Vg=0V --- --- 1400 mA gm Vds=8V, Ids=400mA 450 --- --- mS Vp Vds=8V, Ids=50mA - 3.0 --- - 1.7 V |Vgs0| Igso= - 50µA 3.0 --- --- V Rth f Channel-Case --- --- 22 2.7 °C/W GHz 33 --- dBm 11 --- dB --- 48 --- dBm --- 57 --- % Test Conditions Saturated Drain Current Idss Transconductance Pinchoff Voltage Gate-Source Breakdown Voltage RF Min. Values Typ. Symbol Thermal Resistance Frequency Output Power @ 1dB Gain Compression P1dB Small Signal Gain G Output IP3 IP3 Power Added Efficiency η add Vds=8V Ids=400mA f=2.1GHz Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -1- Units P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC ♦Typical Characteristics Power Derating Curve Transfer Curve Total Power Dissipation (W) 6 1500 Drain Current (mA) 5 4 3 2 1 00 50 100 150 Case Temperature (°C) Vgs=0V 1000 -1.0V 500 -1.5V -2.0V 0 200 -0.5V 0 2 4 6 8 Vds (V) ♦Load-pull Characteristics (Typical Data) Tc=25°C, Vds=8V, Ids=400mA, Common Source, Zo=50Ω (Calibrated to device leads) 90 3.0 4.0 5.0 1.2GHz S12 2.4GHz 4.0 5.0 3.0 2.0 Scale for |S12| 0 0 -180 1.2GHz 1.2GHz S21 2.0 10.0 1.0 0.8 0.6 0.4 0.2 0.2 2.4GHz S22 10.0 0. 4 S11 45 2.4GHz 5 13 0 4.0 1.2GHz 2.0 0.6 0.8 1.0 6.0 2.4GHz 0.02 0.04 0 0.06 -4. 0 - 5 .0 -1.0 .0 -2 -1 35 -3 .0 -0.8 -90 - 0. 6 5 -4 .4 -0 Scale for |S21| -10.0 -0.2 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -2- P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC 90 3.0 2.4GHz 10.0 3.0 4.0 5.0 2.0 1.0 0.8 0.6 0.4 10.0 0. 4 0.2 0.2 45 4.0 5.0 S22 0 5 13 2.4GHz S11 1.2GHz 6.0 2.0 0.6 0.8 1.0 Tc=25°C, Vds=8V, Ids=350mA, Common Source, Zo=50Ω (Calibrated to device leads) Scale for |S12| 4.0 1.2GHz 2.0 S21 0 0 -180 1.2GHz 1.2GHz S12 2.4GHz 2.4GHz 0.02 0.04 0.06 0 -10.0 -0.2 0 - 2. -1 35 -3 .0 6 Scale for |S21| - 4. 0 -5.0 -1.0 -0.8 - 0. 5 -90 Ids=400mA Freq(GHz) S11 M ag -4 .4 -0 S11Ang S21 M ag S21 Ang S12 M ag S12 Ang S22 M ag S22 Ang 1.2 0.807 176.1 4.225 66.1 0.042 31.9 0.380 176.7 1.4 0.812 167.5 3.630 58.4 0.045 30.5 0.387 173.2 1.6 0.815 159.8 3.179 51.2 0.048 29.2 0.394 170.0 1.8 0.819 152.8 2.826 44.3 0.050 27.5 0.399 166.9 2.0 0.822 146.1 2.545 37.4 0.053 25.1 0.403 163.4 2.2 0.823 139.6 2.316 30.7 0.056 22.6 0.406 159.8 2.4 0.827 133.4 2.124 24.0 0.060 19.5 0.408 155.7 S11Ang S21 M ag S21 Ang S12 M ag S12 Ang S22 M ag S22 Ang Ids=350mA Freq(GHz) S11 M ag 1.2 0.808 176.0 4.203 66.2 0.044 31.0 0.400 175.6 1.4 0.812 167.2 3.612 58.5 0.047 29.6 0.407 171.8 1.6 0.818 159.5 3.162 51.4 0.049 28.3 0.414 168.6 1.8 0.821 152.5 2.811 44.4 0.052 26.5 0.417 165.3 2.0 0.823 145.8 2.533 37.6 0.055 24.0 0.422 161.6 2.2 0.824 139.2 2.303 30.9 0.058 21.4 0.423 157.9 2.4 0.828 133.0 2.113 24.2 0.061 18.2 0.427 153.3 [Note] You can download the S-parameter list from our web site: www.sei.co.jp/GaAsIC/ Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -3- P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC Ids=400mA Ids=350mA 80 80 60 60 IP3 40 0 ηadd -20 IM3 -40 IM3/Pout -60 Pout Gain 20 Pout (dBm) Gain (dB) IM3 (dBm) IP3 (dBm) IM3/Pout (dBc) ηadd (%) Pout (dBm) Gain (dB) IM3 (dBm) IP3 (dBm) IM3/Pout (dBc) ηadd (%) Pout Gain 20 0 ηadd -20 IM3 -40 IM3/Pout -60 -80 -100 IP3 40 -80 -15 -10 -5 0 5 10 15 20 -100 25 -15 -10 -5 0 5 10 15 20 Pin (dBm) Pin (dBm) Device: P0120009P Frequency: f1=2.1GHz f2=2.101GHz Bias: Vds=8V, Ids=400mA Source Matching: Mag 0.74 Ang -156.6° Load Matching: Mag 0.554 Ang –171.5° Device: P0120009P Frequency: f1=2.1GHz f2=2.101GHz Bias: Vds=8V, Ids=350mA Source Matching: Mag 0.74 Ang –156.6° Load Matching: Mag 0.49 Ang –172.9° [Note] Pout and η add are measured by one signal. The data for the figures above were measured with the load impedance matched to IP3. Id=400mA Id=350mA Pin (dBm) Pout (dBm) Gain (dB) IM3 (dBm) IM3/Pout (dBc) IP3 (dBm) Id (mA) ηadd (%) -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 2.8 7.8 12.7 17.7 22.9 27.7 31.7 12.8 12.8 12.7 12.7 12.9 12.7 11.7 -72.9 -68.6 -57.7 -42.7 -25.1 2.7 17.7 -75.7 -76.3 -70.3 -60.3 -48.0 -25.0 -14.0 40.6 45.7 47.8 47.8 46.6 39.3 35.2 401.3 397.0 387.4 370.0 343.7 323.3 367.9 0.1 0.2 0.6 1.9 6.7 21.3 46.9 Pin (dBm) Pout (dBm) Gain (dB) IM3 (dBm) IM3/Pout (dBc) IP3 (dBm) Id (mA) ηadd (%) -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 2.2 7.5 12.5 17.5 22.7 27.5 31.6 12.2 12.5 12.5 12.5 12.7 12.5 11.6 -72.1 -67.7 -57.6 -42.7 -23.9 3.4 20.9 -74.3 -75.2 -70.0 -60.2 -46.7 -24.2 -10.7 39.4 45.2 47.1 47.3 45.8 38.5 33.2 346.7 342.5 333.5 317.3 298.0 289.5 352.1 0.1 0.2 0.6 2.1 7.5 23.1 47.3 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -4- 25 P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC Tc= 25°C, Vds=8V, Ids=400mA, Pin=5d Bm [Pout-Lstate] f = 2.1GHz [IP3-Lstate] Γ pout : 0.54∠ 169.9 Source : 0.81∠ -155.1 Pout max : 17.65dBm f1 = 2.1GHz f2 = 2.101GHz Γ IP 3 : 0.55∠ -171.5 Source : 0.74∠ -156.6 IP3 max : 50.7d Bm +j50 +j50 +j25 +j25 +j100 +j100 16.4 17.65 25Ω 25Ω 50Ω 100Ω 50.7 50Ω 100Ω 45.7 -j100 -j25 -j25 -j100 -j50 -j50 Tc= 25°C, Vds=8V, Ids=350mA, Pin=5d Bm [Pout-Lstate] f = 2.1GHz [IP3-Lstate] Γ pout : 0.54∠ 169.9 Source : 0.81∠ -155.1 Pout max : 17.7d Bm f1 = 2.1GHz f2 = 2.101GHz Γ IP 3 : 0.49∠ -172.9 Source : 0.74∠ -156.6 IP3 max : 50.55d Bm +j50 +j50 +j25 +j25 +j100 +j100 17.7 16.45 25Ω 50Ω 25Ω 50.55 100Ω 50Ω 100Ω 45.55 -j100 -j25 -j100 -j25 -j50 -j50 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -5- P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC ♦NF Characteristics 2.0 1.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0.4 0.2 10.0 0 -0.2 1.34 -0 1.84 .4 -2 -1.0 -0.8 -0. 6 -2 -1.0 -0.8 -0.6 .0 .0 .4 .0 -2 -1.0 -0.8 -0.6 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0.4 0.2 0 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0.4 0 0.2 -3 .0 -0 1.86 -3 .0 -4.0 -5.0 .4 1.36 10.0 -3 .0 -0.2 -4.0 -5.0 -10.0 -0 1.93 -10.0 1.43 10.0 -4.0 -5.0 0.2 -0.2 3.0 4.0 5.0 10.0 0.2 10.0 0.8 0.6 1.0 0.8 2.0 2.0 0.6 1.0 3.0 4.0 5.0 -10.0 0. 4 3.0 4.0 5.0 0.2 0.8 Ids=300mA 0. 4 0.6 Ids=350mA 0. 4 Ids=400mA [Note] The data for Smith charts were measured at frequency of 2GHz and Tc of 25°C. NFmin (dB) 0.23 0.34 0.57 0.71 0.95 0.95 1.10 1.24 1.43 Γopt M ag Ang(deg) 0.34 -64.4 0.28 -6.2 0.26 48.8 0.35 92.7 0.41 128.6 0.51 153.6 0.55 -178.1 0.58 -152.3 0.61 -124.6 Freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 NFmin (dB) 0.22 0.33 0.52 0.67 0.96 0.90 1.04 1.17 1.36 Γopt M ag Ang(deg) 0.33 -73.8 0.25 -11.0 0.21 46.0 0.33 89.9 0.36 129.2 0.48 153.1 0.52 -179.2 0.57 -153.2 0.58 -124.8 Rn/50 0.08 0.11 0.14 0.13 0.10 0.06 0.04 0.08 0.20 Vds=8V Rn/50 0.06 0.10 0.12 0.12 0.10 0.06 0.04 0.07 0.18 Ids=400mA Associated Gain(dB) 21.8 19.4 17.7 16.6 15.6 14.9 14.1 13.4 12.9 Ids=350mA Associated Gain(dB) 21.3 19.2 17.4 16.4 15.3 14.7 13.9 13.3 12.7 Vds=8V Freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 NFmin (dB) 0.15 0.26 0.48 0.62 0.84 0.84 0.95 1.08 1.34 Γopt M ag Ang(deg) 0.33 -77.9 0.26 -17.4 0.19 39.7 0.30 86.8 0.34 126.2 0.45 151.0 0.50 179.4 0.54 -154.0 0.55 -123.9 Rn/50 0.06 0.09 0.12 0.11 0.10 0.06 0.04 0.06 0.17 Ids=300mA Associated Gain(dB) 21.1 19.0 17.1 16.1 15.1 14.4 13.7 13.1 12.5 2.0 1.8 NF (dB) Vds=8V Freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.6 Ids=400mA 1.4 Ids=350mA 1.2 Ids=300mA 1.0 0.8 0.6 0.4 0.2 0.0 0 0.5 1.0 1.5 Frequency (GHz) 2.0 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -6- 2.5 P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC ♦Application Circuit : 2110-2170MHz C4 R2 Z4 RF in (Rs=50Ω) C1 Z1 RF out (RL=50Ω) C7 C2 Z2 C3 Z5 Z6 D.U.T Z3 L2 L3 L1 C6 R1 C5 Vd Vg KP029J C1 RF in C7 C2 C3 R1 L1 C4 RF out L2 R2 C6 L3 C5 Vg (-0.7~-2V) Vd (+8V) Ref. Des. R1 R2 C1 C2 C3 C4 C5 C6 C7 L1 L2 L3 Value 82Ω 820Ω 3pF 1pF 0.5pF 4pF 1µF 1µF 2pF 22nH 22nH 4.7nH Part Number SUSUMU RR0816 series MURATA GRM18 series TOKO LL1608 series 20 S21 S-parameters (dB) 10 0 S11 S22 -10 S12 -20 Ref. Designator Z1 Z2 Z3 Z4 Z5 Z6 Electrical length @ 2.1GHz (deg) 31.76 4.08 13.61 8.62 6.38 4.54 All microstrip lines have a line impedance of 50Ω . -30 1.9 2.0 2.1 Frequency (GHz) 2.2 2.3 Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -7- P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC [Typical Performance] KP029J Application Circuit Vds=8V, Ids=400mA, Tc=25°C Frequency characteristics were measured with Pout at 17dBm. Pout, Gain, IP3, Ids vs Pin IP3 45 -45 400 35 Ids 30 350 25 20 Ids (mA) Pout (dBm) Gain (dB) IP3 (dBm) 40 300 Pout -2 0 2 4 6 8 -50 -55 IM3 -60 IM5 -65 Gain 15 10 -4 IM3, IM5 vs Pout -40 450 IM3 (dBc) IM5 (dBc) 50 -70 10 250 12 14 Pin (dBm) IP3 (dBm) 46 44 IP3 vs Fre quency 48 IP3 vs Fre quency Ids=400mA Vds=6V 2120 46 45 44 38 2140 2160 43 2100 2180 Fre quency (MHz) Gain vs Fre quency 13.3 Vds=7V 13.2 Vds=8V 13.1 Vds=6V Ids=360mA Ids=320mA 2120 2140 2160 2180 Fre quency (MHz) 13.3 Gain vs Fre quency Ids=400mA 13.2 Gain (dB) Gain (dB) 22 47 Vds=7V 40 13.4 20 Vds=8V 42 36 2100 18 Pout (dBm) IP3 (dBm) 48 16 13.0 Ids=320mA Ids=360mA 13.1 13.0 12.9 12.9 12.8 12.7 2100 2120 2140 2160 12.8 2100 2180 Fre quency (MHz) 2120 2140 2160 2180 Fre quency (MHz) Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -8- P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC +8V ♦Caution: Power Supply Sequence For safe operation, electric power should be supplied in following sequence. First, the negative voltage should be applied on the gate, and the voltage should be more negative than the pinch-off voltage when you turn on the power supply. Then, drain bias can be applied. Finally, you can turn on the RF signal. When turning off the power supply, the sequence should be (1)RF signal (2)Drain (3)Gate. R1 Q1a R3 Vds Q1b R4 Gate Vo ltage 0V Drain Vo ltage 0V On P0110009P P0120009P R2 Off Bias Voltage R5 Bias Voltage On More Than 1mS Application Circuit Vgs GND GND Off Vds Ids Q1 R1 R2 R3 R4 R5 More Than 1mS ♦Bias Circuit [Passive Biasing] If you use a fixed bias circuit, you sometimes need to control the gate bias to get the same Ids, since the devices have some margin of pinch-off voltage (Vp) variation depending on the wafer lots. If you employ a fixed Vgs biasing for your system, you should closely monitor the drain current, particularly when new wafer lots are introduced. -5V +7.9V 400mA UM T1N (Rohm) 20Ω 1/10W 2.4kΩ 1/10W 0.15Ω RL series (SUSUM U) 1kΩ 1/10W 1.3kΩ 1/10W If you used Ids other than 400mA, you can calculate the resistance values as follows: R4 set to be 1kΩ I2:Ic of Q1b I1: Ic of Q1a Vbe1: Vbe of Q1a Vbe2: Vbe of Q1b [Active Biasing] We recommend using an active bias circuit, which can eliminate the influence of Vp variation. An example of an active bias circuit called “current mirror ” is shown below. Here, two PNP transistors having the minimum variation of Ibe characteristics are used. These transistors adjust Vgs by changing Vds automatically. It will realize the constant current characteristics, regardless of the temperature. The circuit should be connected directly in line with where the voltage supplies would be normally connected with the application circuit. Of course a matching circuit is required, but it is not shown in this figure. R1=(+8V-Vds+Vbe2-Vbe1)/I1=(+8V-Vds)/I1 R2=(Vds-Vbe2)/I1 R3=(+8V-Vds)/(Ids+I2) R5=|-5V-Vgs|/I2 ♦Attention to Heat Radiation In the layout design of the printed circuit board (PCB) on which the power FETs are attached, the heat radiation to minimize the device junction temperature should be taken into account, since it significantly affects the MTTF and RF performance. In any environment, the junction temperature should be lower than the absolute maximum rating during the device operation and it is recommended that the thermal design has enough margin. [Note] In the measurements of RF performance (Pout vs Pin, etc) using the application circuit described before, the active bias circuit herein was not utilized. The application circuits were biased directly from two power supplies. Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -9- P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) The junction temperature can be calculated by the following formula. [Using Heat Sink] If you cannot get the junction temperature lower than the absolute maximum rating only with the plated thru holes, then you need to employ the heat sink. Attaching the heat sink directly under pin 4 of the device improves the thermal resistance between junction and ambient. Tjmax=(Vds*Ids-Pout)(Rth+Rboard+Rhs)+Ta Pout: Output power Rth: Thermal resistance between channel and case Rboard: Thermal resistance of PCB Rhs: Thermal resistance of heat sink Ta: Ambient temperature Tjmax: Maximum junction temperature φ 3 Plated Thru Hole for 2.5 M achine Screws 4-R0.3 Generally, there are two ways of heat radiation. One is the plated thru hole and the other is the heat sink. Key points will be illustrated in each case below. Note that no measure against oscillation is adopted in the figures. In the design of circuit and layout, you should take stabilizing into account if necessary. φ 5 Soldermask Keepout 2 φ 0.4 Plated Thru Holes 0.6 2.95 Heatsink 1.9×2.85 (4-R0.3) [Using Thru Hole] □Multiple plated thru holes are required directly below the device. □The PCB is screwed on the mounting plate or the heat sink to lower the thermal resistance of the PCB. □Lay out a large ground pad area with multiple plated thru holes around pin 4 of the device. □The required matching and feedback circuit described in the application circuit examples should be connected to the device, although it is not shown in the figure below. Grand Plane Grand Plane Package Outline φ 3 Plated Thru Hole for 2.5 M achine Screws φ 5 Soldermask Keepout [Note] □Ground/thermal vias are critical for the proper device performance. Drills of the recommended diameters should be used in the fabrication of vias. □Add as much copper a s possible to inner and outer layers near the part to ensure optimal thermal performance. □Mounting screws can be added near the part to fasten the board to heat sink. Ensure that the ground/thermal via region contacts the heat sink. □Do not put solder mask on the backside of the PCB in the region where the board contacts the heat sink. □RF trace width depends upon the PCB material and construction. □Use 1 oz. Copper minimum. φ 3 Plated Thru Hole for 2.5 M achine Screws φ 5 Soldermask Keepout φ 0.3 Plated Thru Holes Package Outline SUMITOMO ELECTRIC φ 0.4 Plated Thru Holes Grand Plane φ 5 Soldermask Keepout φ 3 Plated Thru Hole for 2.5 M achine Screws Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -10- P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) [Note] The reflow profile is different from the one for Sn-Pb plating. If you use a soldering iron to attach the devices, please beware of the followings. (1) The tip of the iron should be grounded. Or you should use an iron that is electrostatic discharge proof. (2) The temperature of the iron tip should be lower than 240°C and the soldering should be completed within 10 seconds. ♦Package Drawing 4.5 ± 0.1 1.6+0.15 -0.2 1.1 ± 0.3 4.0 ± 0.25 2.5 ± 0.1 0.1 ± 0.05 φ 1.6 ± 0.3 0.42 ± 0.06 0.47 ± 0.06 1 ♦Attention to ESD 0.4+0.03 -0.02 1.5 ± 0.1 0.42 ± 0.06 Generally, GaAs devices are very sensitive to electrostatic discharge (ESD). To reduce the ESD damage, please pay attention to the followings. The devices should be stored with the electrodes short-circuited by conductive materials. The workstation and tools should be grounded for safe dissipation of the static charges in the environment. The workpeople are to wear anti-static clothing and wrist straps. For safety reasons, resistance of 10MΩ or so should exist between workpeople and ground. 3 2 1.5 ± 0.08 1.5 ± 0.08 ♦Laser Marking 1.65MAX ♦Attention to Moisture B 1 2 3 (0.65) The moisture sensitivity level (MSL) of P0120009P is 3, which means that the “floor life” is 168 hours below 30°C with relative humidity (Rh) of 60%. The devices are usually shipped in moisture-resistant alumina-laminated packages. After breaking the packages, they are to be stored under normal temperature and humidity (5-35°C, 45-75%), with no corrosive gases or dust in the environment. Assemble the devices within 168 hours after breaking the package, or you have to bake them at 85°C for 24 hours before assembling. A: 0.67+0 -0.1 B: 0.45 A 1.3+0.1 -0 * * P 1,2,3: Lot No. * * P: Product Type ♦Reliability and Environmental Issues ♦Convection Reflow Profile (Recommended) Temperature ((°C) °C) 300 The detailed reliability information can be seen in Reliability and Quality Assurance, which you can download from our web site. SEI’s Yokohama Works, where the devices are manufactured, has been accredited ISO-14001 since 1999. We control the toxic materials in our products in accordance with PRTR regulation. 260 ± 5°C 5sec max 200 ♦ Lead and Fluoride Time above 230°C < 45 sec 100 To realize Pb-free products, Sn-Bi is used for the lead frame plating. Any fluoride that has been determined by the Montreal agreement is not used in the products. Preheat:160°C 90 sec 0 0 60 SUMITOMO ELECTRIC 120 180 240 Time (sec) Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -11- P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC ♦Caution (3) In case you abandon the products, you should obey the related laws and regulations. GaAs FET chips are used in P0120009P. For safety reasons, you should attend to the following matters: (1) Do not put the products in your mouse. (2) Do not make the products into gases or powders, by burning, breaking or chemical treatments. ♦Technical Inquiries are Welcome SEI welcomes technical questions from any customers. The e-mail is [email protected]. You can also contact our regional offices as below. ♦Worldwide Contacts [Europe] [U.S.A.] Sumitomo Electric Europe Ltd. Sumitomo Electric U.S.A., Inc. 220 Centennial Park, Centennial Avenue, 3235 Kifer Road, Suite 150 Elstree, Herts. WD6 3SL U.K. Santa Clara, CA 95051-0815 USA Tel : +44-(0)20-8953-3369, Fax : +44-(0)20-8207-5950 Tel : +1-408-737-8517 URL : http://www.sumielectric.com Fax : +1-408-734-8881 [Asia/Pacific] Sumitomo Electric Industries, Ltd. Photo-Electron Device Division, Electron Devices Department 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa, 244-8588 Japan Tel : +81-(0)45-853-7263, Fax : +81-(0)45-853-1291 URL: http://www.sei.co.jp/GaAsIC/ E-mail: [email protected] Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -12- P0120009P Technical Note 2W GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC ♦The information in this document is subject to change without notice. Please refer for the most up-to-date information before you start design using SEI’s devices. ♦Any part of this document may not be reproduced or copied. ♦SEI does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of SEI’s products described in this documents. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of SEI or others. ♦Descriptions of circuits and other related information in this document are for illustrative purpose in the examples of the device operation and application. SEI does not assume any responsibility for any losses incurred by customers or third parties arising from the use of the circuits and other related information in this document. ♦SEI’s semi-conductor device products are designed and manufactured for use in the standard communication equipment. Customers that wish to use these products in applications not intended by SEI must contact SEI’ sales representatives in advance. ♦Generally, it is impossible to eliminate completely the defects in semi-conductor products, while SEI has been continually improving the quality and reliability of the products. SEI does not assume any responsibility for any losses incurred by customers or third parties by or arising from the use of SEI’s semi-conductor products. Customers are to incorporate sufficient safety measures in the design such as redundancy, fire-containment and anti-failure features. Specifications and information are subject to change without notice. 2003-11 Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : [email protected] Web Site: www.sei.co.jp/GaAsIC/ -13-