Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current VCES 6500 6300 5800 V IF 400 A IFRM 800 A I2t 87 k A2s Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 10,2 kV Teilentladungs Aussetzspannung partial discharge extinction voltage RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287) VISOL 5,1 kV Charakteristische Werte / Characteristic values Durchlaßspannung forward voltage Sperrstrom reverse current Rückstromspitze peak reverse recovery current IF = 400A, Tvj = 25°C VF VR = 6300V, Tvj = 25°C IR VR = 6500V, Tvj = 125°C max. 3,0 3,8 4,6 V 3,9 4,7 V - 0,15 - mA - 15 - mA - 540 - A - 660 - A - 360 - µC - 700 - µC - 440 - mJ - 1050 - mJ IF = 400A, - diF/dt = 1400A/µs VR = 3600V, Tvj = 25°C IRM IF = 400A, - diF/dt = 1400A/µs VR = 3600V, Tvj = 25°C Qr VR = 3600V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy typ. IF = 400A, Tvj = 125°C VR = 3600V, Tvj = 125°C Sperrverzögerungsladung recovered charge min. IF = 400A, - diF/dt = 1400A/µs VR = 3600V, Tvj = 25°C Erec VR = 3600V, Tvj = 125°C Modulinduktivität stray inductance module pro Zweig / per arm LsCE - 25 - nH Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip pro Zweig / per arm RCC´+EE´ - 0,37 - mΩ prepared by: Dr. Oliver Schilling date of publication: 2002-07-05 approved by: Dr. Schütze 2002-07-05 revision/Status: Series 1 1 DD 400 S65 K1 (final 1).xls Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand thermal resistance, junction to case Diode/Diode, DC RthJC - - 0,032 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per Module λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K RthCK - 0,008 - K/W Tvj, max - - 150 °C Tvj,op -40 - 125 °C Tstg -40 - 125 °C Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur Sperrschicht junction operation temperature Schaltvorgänge Diode(SOA) switching operation Diode(SOA) Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AlN Kriechstrecke creepage distance 56 mm Luftstrecke clearance 26 mm CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque >600 Schraube /screw M6 M 5 Nm Anschlüsse / terminals M8 M 8 - 10 Nm Gewicht weight G 1000 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 2 DD 400 S65 K1 (final 1).xls Technische Information / Technical Information DD 400 S 65 K1 Dioden-Module Diode-Modules Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 800 25°C 700 125°C 600 500 IF [A] 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 VF [V] Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) Pmax = 1200kW ; Tvj= 125°C 800 700 600 IR [A] 500 400 300 200 100 0 0 1000 2000 3000 4000 5000 6000 VR [V] (at auxiliary terminals) 3 DD 400 S65 K1 (final 1).xls Technische Information / Technical Information DD 400 S 65 K1 Dioden-Module Diode-Modules Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) ZthJC [K / W] 0,1 0,01 Zth:Diode 0,001 0,001 0,01 0,1 1 10 100 t [s] i 1 2 3 4 ri [K/kW] : Diode 14,40 8,00 1,92 7,68 τi [s] : Diode 0,030 0,10 0,30 1,0 4 DD 400 S65 K1 (final 1).xls Technische Information / Technical Information Dioden-Module Diode-Modules DD 400 S 65 K1 Äußere Abmessungen / extenal dimensions Anschlüsse / Terminals 1 -- 2 -- 3 -- 4,6 Anode / anode 5,7 Kathode / cathode 5 DD 400 S65 K1 (final 1).xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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