European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 VWK Apr. 1997 IGBT-Module FF 600 R 16 KF4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom DC-collector current repetitive peak collector current Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung total power dissipation gate-emitter peak voltage Dauergleichstrom Periodischer Spitzenstrom DC forward current repetitive peak forw. current Isolations-Prüfspannung insulation test voltage VCES 1600 V Ptot VGE 3900 W ± 20 V tp=1 ms IC ICRM 600 A 1200 A tp=1ms IF IFRM 600 A 1200 A tC=25°C, Transistor /transistor RMS, f=50 Hz, t= 1 min. VISOL Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazität Kollektor-Emitter Reststrom input capacity collector-emitter cut-off current Gate-Emitter Reststrom gate leakage current Emitter-Gate Reststrom Einschaltzeit (induktive Last) gate leakage current turn-on time (inductive load) Speicherzeit (induktive Last) Fallzeit (induktive Last) 3,4 kV min. iC=600A, vGE=15V, t vj=25°C iC=600A, vGE=15V, t vj=125°C iC=40mA, vCE=vGE, tvj=25°C fO=1MHz,tvj=25°C,vCE=25V, v GE=0V vCE=1600V, v GE=0V, t vj=25°C vCE=1600V, v GE=0V, t vj=125°C vCE=0V, v GE=20V, t vj=25°C fall time (inductive load) - 3,5 3,9 V 4,6 5,5 5 V 6,5 V Cies iCES - 90 4 40 - nF - mA - mA iGES - - 400 nA - - 400 nA - 0,8 1 - µs - µs vGE(TO) iEGS ton iC=600A,vCE=900V,v L=±15V vL=±15V, R G=3,3Ω, tvj=25°C ts vL=±15V, R G=3,3Ω, tvj=125°C iC=600A,vCE=900V,v L=±15V tf iC=600A,vCE=900V,v L=±15V Eon vL=±15V, R G=3,3Ω, tvj=25°C vL=±15V, R G=3,3Ω, tvj=125°C max. 4,5 vCE=0V, v EG=20V, t vj=25°C iC=600A,vCE=900V,v L=±15V vL=±15V, R G=3,3Ω, tvj=25°C vL=±15V, R G=3,3Ω, tvj=125°C storage time (inductive load) vCE sat typ. - 1,1 - µs - 1,3 - µs - 0,25 0,3 - µs - µs - 240 - mWs - 140 - mWs - 2,4 2,2 Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverlustenergie pro Puls Abschaltverlustenergie pro Puls turn-on energy loss per pulse RG=3,3Ω, tvj=125°C, LS=70nH iC=600A,vCE=900V,v L=±15V turn-off energy loss per pulse RG=3,3Ω, tvj=125°C, LS=70nH Inversdiode / Inverse diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung iF=600A, vGE=0V, t vj=25°C iF=600A, vGE=0V, t vj=125°C iF=600A, -diF/dt=3kA/µs vRM=900V, v EG=10V, t vj=25°C vRM=900V, v EG=10V, t vj=125°C iF=600A, -diF/dt=3kA/µs recovered charge vRM=900V, v EG=10V, t vj=25°C vRM=900V, v EG=10V, t vj=125°C Eoff vF IRM Qr 2,8 V - V - 230 - A - 320 - A - 50 110 - µAs - µAs Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Transistor, DC, pro Modul / per module Transistor, DC, pro Zweig / per arm RthJC Diode /diode, DC, pro Modul / per module Diode /diode, DC, pro Zweig / per arm Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzul. Sperrschichttemperatur Betriebstemperatur max. junction temperature operating temperature Lagertemperatur storage temperature pro Module / per Module pro Zweig / per arm Innere Isolation 0,04 °C/W 0,08 °C/W RthCK tvj max tc op tstg Mechanische Eigenschaften / Mechanical properties internal insulation Anzugsdrehmoment f. mech. Befestigung / mounting torque Anzugsdrehmoment f. elektr. Anschlüsse / terminal connection torque terminals M6 / tolerance ±10% terminals M4 / tolerance +5/-10% M1 M2 terminals M8 Gewicht weight G Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection tfg = 10 µs VCC = 1000 V vL = ±15V vCEM = 1300 V RGF = R GR = 3,3 Ω iCMK1 ≈ 6000 A tvj = 125°C iCMK2 ≈ 4500 A Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions v CEM = VCES - 20nH x |di c/dt| 0,016 °C/W 0,032 °C/W 0,008 °C/W 0,016 °C/W 150 °C -40...+125 °C -40...+125 °C Al2O3 3 Nm 2 Nm 8...10 Nm ca. 1500 g FF 600 R 16 KF4 1000 1200 iC [A] iC [A] 1000 800 VGE = 20 V 15 V 800 600 12 V 600 10 V 400 9V 400 8V 200 200 0 1 2 3 4 5 0 1 vCE [V] FF 600 R 16 KF4 / 1 Bild / Fig. 1 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) / Collector-emitter-voltage in saturation region (typical) VGE = 15 V t vj = 25°C t vj = 125°C 1200 3 4 5 vCE [V] Bild / Fig. 2 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) / Collector-emitter-voltage in saturation region (typical) tvj = 125°C 1400 tvj = 125 °C 25 °C iC [A] 2 FF 600 R 16 KF4 / 2 iC1200 [A] 1000 1000 800 800 600 600 400 400 200 200 0 5 6 7 8 FF 600 R 16 KF4 / 3 Bild / Fig. 3 Übertragungscharakteristik (typisch) / Transfer characteristic (typical) VCE = 20 V 9 10 11 vGE [V] 12 0 0 500 1000 FF 600 R 16 KF4 / 4 Bild / Fig. 4 Rückwärts-Arbeitsbereich / Reverse biased safe operating area tvj = 125 °C vLF = vLR = 15 V RG = 3,3 Ω 1500 vCE [V] 2000 FF 600 R 16 KF4 -1 10 Diode 7 1200 iF [A] Z(th)JC [°C/W] 1000 IGBT 3 800 2 -2 10 600 7 5 400 4 3 200 2 -3 10 10-3 2 3 4 5 7 10-2 2 3 4 5 7 10 -1 2 FF 600 R 16 KF4 / 5 Bild / Fig. 5 Transienter innerer Wärmewiderstand (DC) / Transient thermal impedance (DC) 3 4 5 7 100 2 t [s] 3 4 5 7 101 0 0 0,5 1 1,5 2 FF 600 R 16 KF4 / 6 Bild / Fig. 6 Durchlaßkennlinie der Inversdiode (typisch) / Forward characteristic of the inverse diode (typical) tvj = 25°C tvj = 125°C 2,5 3 vF [V] 3,5 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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