APT30DF20HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 200V IF = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • + Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) ~ Benefits ~ • • • • • • - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IFSM Non-Repetitive Forward Surge Current Duty cycle = 50% 8.3ms Max ratings Unit 200 V TC = 25°C 45 TC = 80°C TJ = 45°C 30 A 320 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APT30DF20HJ – Rev 1 November, 2009 Absolute maximum ratings APT30DF20HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 30A IF = 60A Tj = 125°C IF = 30A Tj = 25°C VR = 200V Tj = 125°C Min Typ 1.1 1.4 0.9 Max 1.3 V 250 500 VR = 200V Unit 95 µA pF Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 30A VR = 133V di/dt = 200A/µs IF = 30A VR = 133V di/dt=1000A/µs Min Typ Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 33 150 3 6 Tj = 125°C Max Unit ns nC A 31 ns 355 nC 19 A Thermal and package characteristics Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com Typ Max 1.2 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g 2-4 APT30DF20HJ – Rev 1 November, 2009 Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt APT30DF20HJ Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge 60 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 60 50 40 30 TJ=125°C 20 TJ=25°C 10 0 0.0 0.3 0.5 0.8 1.0 1.3 TJ=125°C VR=133V 50 40 60 A 30 A 30 15 A 20 10 0 1.5 0 200 QRR vs. Current Rate Charge TJ=125°C VR=133V 60 A 375 30 A 15 A 250 125 0 0 200 400 600 400 600 800 -diF/dt (A/µs) 1000 1200 IRRM vs. Current Rate of Charge 500 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (nC) VF, Anode to Cathode Voltage (V) 20 TJ=125°C VR=133V 30 A 60 A 15 A 15 10 5 0 -diF/dt (A/µs) 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 500 400 300 200 100 0 1 10 100 1000 VR, Reverse Voltage (V) www.microsemi.com 3-4 APT30DF20HJ – Rev 1 November, 2009 C, Capacitance (pF) 600 APT30DF20HJ SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) 38.0 (1.496) 38.2 (1.504) ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 4-4 APT30DF20HJ – Rev 1 November, 2009 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.