APT60DS04HJ ISOTOP® Schottky Diode Full Bridge Power Module VRRM = 45V IF = 60A @ Tc = 80°C Application • • • Switch mode power supplies rectifier Induction heating Welding equipment Features • • • • • • + ~ ~ - Ultra fast recovery times Soft recovery characteristics High current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) Benefits • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM IFAV IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Rectangular, d = 0.5 Non-Repetitive Forward Surge Current t = 10ms TC = 80°C TJ = 45°C Max ratings Unit 45 V 60 600 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APT60DS04HJ – Rev 0 November, 2009 Absolute maximum ratings APT60DS04HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions IR Reverse Current VR = 45V VF Forward Voltage IF = 60A Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ Max 30 250 0.58 0.48 Unit mA V Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Typ Max 0.8 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) Dimensions in Millimeters and (Inches) 38.0 (1.496) 38.2 (1.504) www.microsemi.com 2-3 APT60DS04HJ – Rev 0 November, 2009 30.1 (1.185) 30.3 (1.193) APT60DS04HJ Typical Performance Curve Forward Characteristic 120 100 IF (A) 80 TJ=125°C 60 40 TJ=25°C 20 0 0.0 0.2 0.4 0.6 0.8 1.0 VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 0.9 0.6 0.7 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APT60DS04HJ – Rev 0 November, 2009 ISOTOP® is a registered trademark of ST Microelectronics NV