200 mW EPITAXIAL PLANAR DIODES FMBB914 Data Sheet Mechanical Dimensions Description .110 .060 Pin 3 3 Pin 2 NC .037 .115 .037 1 2 Pin 1 .016 1 3 2 .043 .016 .004 Features n PLANAR PROCESS n INDUSTRY STANDARD SOT-23 PACKAGE n 200 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 FMBB914 Units FMBB914 80 80 Volts Volts Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO ............................................. 100 ............................................... mAmps Non-Repetitive Peak Forward Surge Current...IFSM ............................................. 4.0 ............................................... Power Dissipation...PD ......................................... Operating Temperature Range...TJ ......................................... -25 to 85 .......................................... °C Storage Temperature Range...TSTRG ......................................... -55 to 125 .......................................... °C ............................................. 1.2 ............................................... Volts ............................................. 0.1 ............................................... µAmps Maximum Frequency...f ............................................. 100 ............................................... MHz Maximum Diode Capacitance...CD ............................................. 3.5 ............................................... pF Maximum Reverse Recovery Time...tRR ............................................. 4.0 ............................................... ns 200 .......................................... Amps mW Electrical Characteristics Maximum Forward Voltage...VF @ IF = 100 mA Maximum DC Reverse Current...IR @ VR = 70V .01 uF PVV = 100ns Device Under TTest est 50 Ohms RG = 50 Ohms Page 10-22 Trr IF 5K Ohms Output IR 0.1 IR