AGILENT HPND-4005

Beam Lead PIN Diode
Technical Data
HPND-4005
Features
• High Breakdown Voltage
120 V Typical
• Low Capacitance
0.017 pF Typical
GOLD LEADS
S1O2/Si3N4
PASSIVATION
CATHODE
130 (5.1)
110 (4.3)
110 (4.3)
80 (3.1)
130 (5.1)
110 (4.3)
• Low Resistance
4.7 Ω Typical
• Rugged Construction
4 Grams Minimum Lead Pull
• Nitride Passivated
760 (29.9)
640 (25.2)
.4 (10)
.3 (7)
GLASS
SILICON
320 (12.6)
220 (8.7)
280 (11.0)
180 (7.1)
Description
The HPND-4005 planar beam lead
PIN diode is constructed to offer
exceptional lead strength while
achieving excellent electrical
performance at high frequencies.
High beam strength offers users
superior assembly yield, while
extremely low capacitance allows
high isolation to be realized.
Nitride passivation and polyimide
coating provide reliable device
protection.
Applications
The HPND-4005 beam lead PIN
diode is designed for use in
stripline or microstrip circuits.
Applications include switching,
attenuating, phase shifting,
limiting, and modulating at
microwave frequencies. The
220 (8.7)
180 (7.1)
60 (2.4)
30 (1.2)
25 MIN (1.0)
DIMENSIONS IN µm (1/1000 inch)
Outline 21
Maximum Ratings
Operating Temperature ....................................................... -65°C to +175°C
Storage Temperature ........................................................... -65°C to +200°C
Power Dissipation at TCASE = 25°C ................................................. 250 mW
(Derate linearly to zero at 175°C.)
Minimum Lead Strength ................................... 4 grams pull on either lead
Diode Mounting Temperature ................................. 220°C for 10 sec. max.
extremely low capacitance of the
HPND-4005 makes it ideal for
circuits requiring high isolation in
a series diode configuration.
2
Electrical Specifications at TA = 25°C
Breakdown
Voltage
VBR (V)
Series
Resistance
RS (Ω)[2]
Part
Number
HPND-
Min.
Typ.
Typ.
Max.
4005
100
120
4.7
6.5
IR = 10 mA
Test
Conditions
Forward
Voltage
VF (V)
Reverse
Current
IR (nA)
Max.
Max.
Max.
Min.
Typ.
0.02
1.0
100
50
100
IF = 20 mA
VR = 30 V
Capacitance
CT (pF)[1,2]
Typ.
0.017
IF = 20 mA
IF = 100 MHz
VR = 10 V
f = 10 GHz
Minority Carrier
Lifetime
τ (ns)[2]
IF = 10 mA
IR = 6 mA
Notes:
1. Total capacitance calculated from measured isolation value in a series configuration.
2. Test performed on packaged samples.
Typical Parameters
1
0.1
0.01
0.25
0.50
0.75
1.00
1.25
VF – FORWARD VOLTAGE (V)
CAPACITANCE (PF)
0.06
0.04
0.02
10
20
REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance at
10 GHz vs. Reverse Bias.
10
1
0.01
30
30
20
1
INSERTION LOSS AT:
10 mA
20 mA
50 mA
10
0.1
1
10
100
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
0.08
0
100
IF – FORWARD BIAS CURRENT (mA)
Figure 1. Typical Forward
Conduction Characteristics.
0
ISOLATION AT:
–30V
–10V
1000
ISOLATION (dB)
RF RESISTANCE (OHMS)
IF – FORWARD CURRENT (mA)
10
40
1
10
FREQUENCY (GHz)
Figure 3. Typical Isolation and
Insertion Loss in the Series
Configuration (ZO = 50 Ω).
18
0
INSERTION LOSS (dB)
10,000
100
3
Bonding and Handling
Procedures for Beam
Lead Diodes
1. Storage
Under normal circumstances,
storage of beam lead diodes in
Agilent-supplied waffle/gel packs
is sufficient. In particularly dusty
or chemically hazardous environments, storage in an inert atmosphere desiccator is advised.
2. Handling
In order to avoid damage to beam
lead devices, particular care must
be exercised during inspection,
testing, and assembly. Although
the beam lead diode is designed to
have exceptional lead strength, its
small size and delicate nature
requires that special handling
techniques be observed so that
the devices will not be mechanically or electrically damaged. A
vacuum pickup is recommended
for picking up beam lead devices,
particularly larger ones, e.g.,
quads. Care must be exercised to
assure that the vacuum opening of
the needle is sufficiently small to
avoid passage of the device
through the opening. A #27 tip is
recommended for picking up
single beam lead devices. A 20X
magnification is needed for
precise positioning of the tip on
the device. Where a vacuum
pickup is not used, a sharpened
wooden Q-tip dipped in isopropyl
alcohol is very commonly used to
handle beam lead devices.
3. Cleaning
For organic contamination use a
warm rinse of trichloroethane, or
its locally approved equivalent,
followed by a cold rinse in acetone and methanol. Dry under
infrared heat lamp for 5–10
minutes on clean filter paper.
Freon degreaser, or its locally
approved equivalent, may replace
trichloroethane for light organic
contamination.
• Ultrasonic cleaning is not
recommended.
• Acid solvents should not be
used.
4. Bonding
Thermocompression: See
Application Note 979 “The Handling and Bonding of Beam Lead
Devices Made Easy”. This method
is good for hard substrates only.
Wobble: This method picks up
the device, places it on the
substrate and forms a thermocompression bond all in one
operation. This is described in the
latest version of MIL-STD-883,
Method 2017, and is intended for
hard substrates only.
Resistance Welding or
Parallel-GAP Welding: To make
welding on soft substrates easier,
a low pressure welding head is
recommended. Suitable equipment is available from HUGHES,
Industrial Products Division in
Carlsbad, CA.
Epoxy: With solvent free, low
resistivity epoxies (available from
ABLESTIK and improvements in
dispensing equipment, the quality
of epoxy bonds is sufficient for
many applications.
5. Lead Stress
In the process of bonding a beam
lead diode, a certain amount of
“bugging” occurs. The term
bugging refers to the chip lifting
away from the substrate during
the bonding process due to the
deformation of the beam by the
bonding tool. This effect is
beneficial as it provides stress
relief for the diode during thermal
cycling of the substrate. The
coefficient of expansion of some
substrate materials, specifically
soft substrates, is such that some
bugging is essential if the circuit is
to be operated over wide temperature extremes.
Thick metal clad ground planes
restrict the thermal expansion of
the dielectric substrates in the X-Y
axis. The expansion of the dielectric will then be mainly in the Z
axis, which does not affect the
beam lead device. An alternate
solution to the problem of dielectric ground plane expansion is to
heat the substrate to the maximum required operating temperature during the beam lead attachment. Thus, the substrate is at
maximum expansion when the
device is bonded. Subsequent
cooling of the substrate will cause
bugging, similar to bugging in
thermocompression bonding or
epoxy bonding. Other methods of
bugging are preforming the leads
during assembly or prestressing
the substrate.
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Data subject to change.
Copyright © 1999 Agilent Technologies
Obsoletes 5954-2226
5965-8877E (11/99)