FMA3014 Datasheet v3.0 12.7-16GHZ MMIC LIMITING AMPLIFIER FEATURES: • • • • • • • FUNCTIONAL SCHEMATIC: Self-Biased Single Supply 32dB Gain 17dBm Output pHEMT Technology Input Return Loss < -15dB Output Return Loss < -12dB VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3014 is a high performance 12.716GHz Gallium Arsenide monolithic amplifier. It is suitable for use in broadband communication and electronic warfare applications. The FMA3014 is ideally suited as a limiting amplifier where output power is invariant of input power. An example is the reduction of variability of mixer conversion loss to input LO drive level. TYPICAL APPLICATIONS: • • • • Electronic Warfare Broadband Communication Infrastructure Cellular Backhaul Point to Point Radio ELECTRICAL SPECIFICATIONS: PARAMETER CONDITIONS (VDD=4.5V, ID=100mA) MIN TYP MAX UNITS Small Signal Gain 12.7-16GHz 28 32 dB Input Return Loss 12.7-16GHz -8 -15 dB Output Return Loss 12.7-16GHz -8 -12 dB Output Power at 1dB 12.7-16GHz 13 15 dBm Saturated Output Power 12.7-16GHz 15 17 dBm Noise Figure 12.7-16GHz 6 7 dB Self-bias Current Small signal 100 130 mA compression point Note: TAMBIENT = +25°C, Z0 = 50Ω 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3014 Datasheet v3.0 ABSOLUTE MAXIMUM RATINGS: PARAMETER SYMBOL ABSOLUTE MAXIMUM Max Input Power Pin +20dBm Gate Voltage VG1 Not Required Drain Voltage VDD +6V Operating Temp Toper -40°C to +85°C Storage Temp Tstor -55°C to +150°C Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PAD LAYOUT: PAD REF PAD NAME DESCRIPTION PIN COORDINATES (µm) A I RF in (97,961) B B B 1st and 2nd stage drain (1206,1248) C D 3rd and 4th stage drain (2166,1248) D O RF out (2904,550) E E 4th stage bias adjust (2721,102) F F Ground for pad E (2467,102) G G 3rd stage bias adjust (1957,102) H H Ground for pad G (1703,102) I J 2nd stage bias adjust (1225,102) J K Ground for pad I (1061,102) K L 1st stage bias adjust (636,102) L M Ground for pad K (472,102) B A B C D L K J I H G F E Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening. Pads without identifiers are ground connections used in wafer testing. DIE SIZE (μm) DIE THICKNESS (μm) MIN. BOND PAD PITCH (μm) MIN. BOND PAD OPENING (μm x μm ) 3000 x 1348 100 164um 100 x 100 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: [email protected] Fax: +44 (0) 1325 306177 Website: www.filtronic.com FMA3014 Datasheet v3.0 TYPICAL PERFORMANCE FOR ON WAFER MEASUREMENTS: Note: Measurement Conditions ID= 110mA, VDD= 4.5V, TAMBIENT = 25°C Gain Input Return Loss 0 40 -5 Return Loss (dB) 35 Gain (dB) 30 25 20 -10 -15 -20 -25 15 -30 10 10 11 12 13 14 15 16 Frequency (GHz) 17 18 19 10 20 11 12 Output Return Loss 13 14 15 16 Frequency (GHz) 17 18 19 20 Reverse Isolation 0 -40 -45 -5 Isolation (dB) Return Loss (dB) -50 -10 -15 -20 -55 -60 -65 -70 -25 -75 -30 -80 10 11 12 13 14 15 16 Frequency (GHz) 17 18 19 20 10 11 12 13 14 15 16 Frequency (GHz) 17 18 19 20 TYPICAL MEASURED PERFORMANCE FOR 10 SITE ON WAFER POWER TRANSFER CHARACTERISTIC: 25 15 10 10 5 5 0 -30 -25 -20 -15 -25 -20 -15 -10 -5 -5 0 -30 Pout (dBm 15 20 Pout(dBm 20 25 -10 -10 Pin (dBm) Pin (dBm) Note: Measurement conditions: VDD = 4.5V Id=110mA (typ) Note: Measurement conditions: VDD = 6V Id=110mA (typ) 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3014 Datasheet v3.0 BIASING CIRCUIT SCHEMATIC: VDD C1 100pF C2 100nF RF input RF Output Assembly Diagram: C1 100pF Capacitor Note: Bond Wire length should be kept to a minimum BILL OF MATERIALS: LABEL COMPONENT Board All RF tracks should be 50Ω characteristic material C1 Capacitor, 100pF, chip capacitor C2 Capacitor, 100nF, 0402 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3014 Datasheet v3.0 Swp Max 16GHz 2. 0 0. 6 0. 8 A pair of bondwires in the ‘V’ formation shown in the figure above, should if kept reasonably short, yield a combined inter-connect inductance of below 0.25nH. The FMA3014 has excellent return losses (blue triangles) and these are modified by the addition of a 0.25nH bondwire inductance (pink squares) as shown in the figures below. 1.0 EFFECT OF BONDWIRES AND BOND COMPENSATION: 0. 3. 0 4 0 4. 5. 0 0. 2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10 .0 2. 0 .6 -2 .0 10.0 5.0 4.0 3.0 2.0 1.0 -0 .8 -1.0 0.2 0.8 -0 0.8 0. 4 0.6 Swp Min 12GHz S(2,2) matched 10.0 0.4 0 S(2,2) with bonds 5.0 0.2 -3 . 6 0. -4 .0 S(2,2) 4 . -0 RFOW 0 3. 0 4. 0 -5 . 0 1.0 -1 0. 0 2 -0 . Swp Max 16GHz -10.0 0 2 -0. -4 .0 -5. 0 S(1,1) 4 . -0 RFOW -5 .0 -2 -10 Swp Min 12GHz -1.0 -0.8 -0 .6 -3 .0 S(1,1) with bonds -15 S(1,1) matched -20 -25 0 -30 -5 -35 -10 -40 DB(|S(2,2)|) RFOW 12 DB(|S(2,2)|) with bonds 13 -15 DB(|S(2,2)|) matched 14 Frequency (GHz) 15 16 -20 -25 -30 -35 DB(|S(1,1)|) RFOW DB(|S(1,1)|) with bonds DB(|S(1,1)|) matched -40 12 13 14 Frequency (GHz) 15 16 Once bonded the return losses are still at a reasonable level. They can be improved with simple compensation networks. The figures also show the effect of this bondwire compensation network (brown diamonds). The networks are shown at the end of this section. Input Output Dimensions in mm. Material is 10 thou 4350 Er=3.38 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3014 Datasheet v3.0 PREFERRED ASSEMBLY INSTRUCTIONS: ORDERING INFORMATION: PART NUMBER GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. DESCRIPTION Die in Waffle-pack FMA3014 (Gel-pak available on request) The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290°C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260°C. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (250500V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters, noise data and large-signal models are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com