FMS2029 Pre-Production Datasheet v3.0 DC–20 GHZ MMIC SPST ABSORPTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Low insertion loss: 2.2 dB at 20 GHz High isolation: 50 dB at 20 GHz Absorptive input and output in off-state Excellent low control voltage performance Available in die form RFout RFin GENERAL DESCRIPTION: The FMS2029 is a low loss high isolation broadband single-pole-single-throw Gallium Arsenide switch, designed on the FL05 0.5µm switch process from Filtronic. It offers absorptive properties from both ports (50 Ohms terminations). This process technology offers leading-edge performance optimised for switch applications. The FMS2029 is developed for the broadband communications, instrumentation and electronic warfare markets. V1 V2 TYPICAL APPLICATIONS: • • • • Broadband communications Test Instrumentation Fibre Optics Electronic warfare (ECM, ESM) ELECTRICAL SPECIFICATIONS (SMALL-SIGNAL UNLESS OTHERWISE STATED): PARAMETER CONDITIONS MIN TYP MAX UNITS Insertion Loss DC 5 GHz 10 GHz 15 GHz 20 GHz -1 -1.35 -1.65 -2 -2.55 -0.85 -1 -1.4 -1.7 -2.3 – – – – – dB dB dB dB dB Isolation DC-20 GHz – -60 -45 dB Input Return Loss (ON state) DC-20 GHz – -20 -17 dB Output Return Loss (ON state) DC-20 GHz – -20 -17 dB Input Return Loss (OFF state) DC-20 GHz – -12 -10 dB Output Return Loss (OFF state) DC-20 GHz – -12 -10 dB P1dB 2 GHz 10 GHz 20 GHz 24.5 23.5 20.5 26.7 25.2 22.5 – – – dBm dBm dBm Switching speed 10% to 90% RF 90% to 10% RF 50% DC to 90% RF 50% DC to 10% RF – – – – 17 42 27 53 – – – – ns ns ns ns Note 1: TAMBIENT = 25°C, Vctrl = 0V/-5V Note 2 : Specifications based on on-wafer measurements 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2029 Pre-Production Datasheet v3.0 TRUTH TABLE: ABSOLUTE MAXIMUM RATINGS: PARAMETER SYMBOL ABSOLUTE MAXIMUM Max Input Power Pin Operating Temp Storage Temp CONTROL LINE RF PATH +27dBm V1 V2 RFIN-RFO -40°C to +85°C -5V 0V On (Low Loss) Toper 0V -5V Off (Isolation) Tstor -55°C to +150°C Note: -5V ± 0.2V; 0V ± 0.2V Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PAD LAYOUT: PAD NAME DESCRIPTION PIN COORDINATES (µm) RFIN RFIN 141,587 RFO RFOUT 1789,587 V1 V1 901,161 V2 V2 1101,161 Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening DIE SIZE (µm) DIE THICKNESS (µm) MIN. BOND PAD PITCH (µm) MIN. BOND PAD OPENING (µm x µm ) 1910 x 1110 100 150 116 x 116 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2029 Pre-Production Datasheet v3.0 TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS: Note: Measurement Conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25° C unless otherwise stated Isolation (S21 OFF) 0.00 0.00 -0.50 -20.00 S21 (dB) S21 (dB) Insertion Loss (S21 ON) -1.00 -1.50 -2.00 -40.00 -60.00 -80.00 -100.00 -2.50 -120.00 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 Frequency (GHz) Input Return Loss (S11 ON) 12 14 16 18 20 14 16 18 20 18 20 Output Return Loss (S22 ON) 0.00 0.00 -5.00 -5.00 -10.00 -10.00 S11 (dB) S11 (dB) 10 Frequency (GHz) -15.00 -15.00 -20.00 -20.00 -25.00 -25.00 -30.00 -30.00 0 2 4 6 8 10 12 14 16 18 0 20 2 4 6 8 10 12 Frequency (GHz) Frequency (GHz) IN and OUT Absorptive Return Loss (S11 OFF / S22 OFF) P1dB 0.00 28.00 -5.00 24.00 P1dB (dBm) S11 (dB) -10.00 -15.00 -20.00 -25.00 20.00 16.00 12.00 8.00 -30.00 4.00 -35.00 0.00 0 2 4 6 8 10 12 14 16 18 20 2 4 6 Frequency (GHz) 8 10 12 14 16 Frequency (GHz) 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2029 Pre-Production Datasheet v3.0 TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS OVER TEMPERATURE: Note: Measurement Conditions VCTRL= -5V (low) & 0V (high) TAMBIENT = 25°C TCOLD = -40°C THOT = +85°C Insertion Loss (S21 ON) Isolation (S21 OFF) 0.00 0.00 -20.00 S21 (dB) S21 (dB) -0.50 -1.00 -1.50 -2.00 -40.00 -60.00 -80.00 -100.00 -120.00 -2.50 0 2 4 6 8 10 12 14 16 18 0 20 2 4 6 8 Input Return Loss (S11 ON) 12 14 16 18 20 14 16 18 20 Output Return Loss (S22 ON) 0.00 0.00 -5.00 -5.00 -10.00 -10.00 S22 (dB) S11 (dB) 10 Frequency (GHz) Frequency (GHz) -15.00 -15.00 -20.00 -20.00 -25.00 -25.00 -30.00 -30.00 0 2 4 6 8 10 12 14 16 18 0 20 2 4 6 8 10 12 Frequency (GHz) Frequency (GHz) Absorptive Output Return Loss (S22 OFF) P1dB 0.00 28.00 -5.00 24.00 P1dB (dBm) S22 (dB) -10.00 -15.00 -20.00 -25.00 20.00 16.00 12.00 8.00 -30.00 4.00 0.00 -35.00 0 2 4 6 8 10 12 14 16 18 2 20 4 6 8 10 12 14 16 18 20 Frequency (GHz) Frequency (GHz) 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMS2029 Pre-Production Datasheet v3.0 PREFERRED ASSEMBLY INSTRUCTIONS: HANDLING PRECAUTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (250-500 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD1686 and MIL-HDBK-263. The back of the die is metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for one hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. Eutectic die attach is not recommended. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire be used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER DESCRIPTION FMS2029-000-WP Die in Waffle-pack (Gel-pak available on request) Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com