FPD6836P70 Datasheet v3.0 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT ` FEATURES: • • • • • • PACKAGE: 22 dBm Output Power (P1dB) 15 dB Power Gain (G1dB) at 5.8 GHz 0.8 dB Noise Figure at 5.8 GHz 32 dBm Output IP3 at 5.8 GHz 45% Power-Added Efficiency at 5.8 GHz Useable Gain to 18 GHz GENERAL DESCRIPTION: The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low noise, high frequency applications. TYPICAL APPLICATIONS: • • • • Gain blocks and medium power stages WiMax (2-11GHz) WLAN 802.11a (5.8GHz) Point-to-Point Radio (to 18GHz) ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS Power at 1dB Gain Compression P1dB VDS = 5 V; IDS = 55mA Small Signal Gain SSG VDS = 5 V; IDS = 55mA Power-Added Efficiency PAE VDS = 5 V; IDS = 55mA MIN 14 TYP MAX UNITS 22 dBm 16 dB 45 % POUT = P1dB Maximum Stable Gain (S21/S12) MSG VDS = 5 V; IDS = 55mA f = 12 GHz 15 f = 18 GHz 12 Noise Figure NF VDS = 5 V; IDS = 55mA, 0.8 dB Output Third-Order Intercept Point IP3 VDS = 5V; IDS = 55mA 32 dBm POUT = 10 dBm SCL Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 90 105 135 mA Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 215 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 140 mS Gate-Source Leakage Current IGSO VGS = -5 V 1 10 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 0.2 mA 0.7 1.0 1.3 V Gate-Source Breakdown Voltage |VBDGS| IGS = 0.36mA 12 14 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 0.36 mA 14.5 16 V Thermal Resistance RθJC 275 °C/W Note: TAMBIENT = 22°C; RF specification measured at f = 5.8 GHz using CW signal (except as noted) 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD6836P70 Datasheet v3.0 1 ABSOLUTE MAXIMUM RATING : PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM Drain-Source Voltage VDS -3V < VGS < +0V 8V Gate-Source Voltage VGS 0V < VDS < +8V -3V Drain-Source Current IDS For VDS < 2V IDSS Gate Current IG Forward or reverse current 10mA RF Input Power PIN Under any acceptable bias state 16dBm Channel Operating Temperature TCH Under any acceptable bias state 175°C Storage Temperature TSTG Non-Operating Storage -40°C to 150°C PTOT See De-Rating Note below 550mW 2 or more Max. Limits 80% 2 Total Power Dissipation 3 Simultaneous Combination of Limits Notes: 1 TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 550mW - (1/ RθJC) x TPACK where TPACK= source tab lead temperature above 22°C Example: For a 65°C carrier temperature: PTOT = 550mW – (3.6 x (65 – 22)) = 323mW BIASING GUIDELINES: • • • Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD6836P70. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B bias of 25-33% IDSS offers an optimised solution for NF and OIP3. 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD6836P70 Datasheet v3.0 TYPICAL FREQUENCY RESPONSE FPD6836P70 Bias VD = 5V, ID = 50mA FPD6836P70 Biased @ VD = 5V ID = 55mA 5 30 4.5 S21 4 3.5 20 Mag S21 & 3 15 2.5 2 10 1.5 1 5 0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Frequency (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) NOTE: Tuned Noise figure variation against frequency is shown above. The devices were biased nominally at VDS = 5V, IDS = 50mA. The test devices were tuned for minimum noise figure using tuners at the device input and output ports. TYPICAL RF PERFORMANCE Drain Efficiency and PAE Power Transfer Characteristics VDS = 5V, IDS = 55mA at f = 5.8GHz 70.0% 70.0% 4.00 23.0 Eff. 60.0% Comp Point 2.00 17.0 1.50 15.0 1.00 13.0 PAE (%) 2.50 19.0 50.0% 50.0% 40.0% 40.0% 30.0% 30.0% 20.0% 20.0% 10.0% 10.0% 0.50 11.0 0.00 9.0 -0.50 -3 -1 1 3 5 7 9 11 0.0% 13 0.0% -3 Input Power (dBm) -1 1 3 5 7 9 11 13 Input Power (dBm) Typical Intermodulation Performance VDS = 5V, IDS = 55mA at f = 5.8GHz -38.00 12 3rds (dBc) Output Power (dBm) 10 -43.00 8 -48.00 6 -53.00 3rd Order IM Products (dBc) Pout (dBm) NOTE: Typical Power, Efficiency and Intermodulation is shown above. The devices were biased nominally at VDS = 5V, IDS = 55mA at a test frequency of 5.8 GHz. The test devices were Tuned using slide tuners at the input and the output ports of the device. 4 2 -58.00 -10.3 -9.3 -8.3 -7.4 -6.3 -5.3 -4.4 -3.4 -2.4 Inpur Power (dBm) 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com Drain Efficiency (%) 3.00 Gain Compression (dB) Output Power (dBm) PAE 60.0% 3.50 Pout (dBm) 21.0 Noise Figure MSG 25 MSG FPD6836P70 Datasheet v3.0 TEMPERATURE RESPONSE: FPD6836P70 Inte rmodulation Variation ove r Te mpe rature VDS = 5.0V IDS = 55mA at f = 5.8GHz FPD6836P70 Gain & Powe r Variation ove r Te mpe rature VDS = 5.0V IDS = 55mA at f = 5.8GHz Intermodulation Products (dBc) 22.00 19.00 21.00 SSG (dB) 19.00 18.00 17.00 17.00 16.00 16.00 15.00 P1dB (dBm) 20.00 18.00 14.00 15.00 SSG P1dB 13.00 12.00 14.00 -40 -20 0 20 40 60 -30.00 IM3 -35.00 -40.00 -45.00 -50.00 -40 80 -20 0 20 40 60 80 Temperature (C) Temperature (C) NOTE: Typical power, gain and Inter-modulation variation over temperature is shown above. The devices were biased nominally at VDS = 5V, IDS = 55mA at a test frequency of 5.8 GHz on eval board. The eval board is tuned for minimum noise and maximum gain. The 1dB compression point is lower than the typical number due to the change in matching. NOISE PARAMETERS: Bias 5V, 50mA Freq (GHz) 0.90 1.80 2.40 2.60 2.80 3.20 4.00 5.00 5.50 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 Mag 0.747 0.623 0.795 0.640 0.670 0.617 0.542 0.465 0.431 0.366 0.262 0.188 0.135 0.162 0.183 0.270 0.343 0.431 0.573 Angle 15.70 24.95 37.45 47.15 47.90 51.20 68.70 85.00 91.10 101.15 122.10 153.60 -165.60 -126.80 -85.95 -68.40 -50.25 -43.95 -25.80 Rn/50 0.165 0.176 0.158 0.159 0.160 0.156 0.141 0.120 0.114 0.107 0.096 0.100 0.121 0.138 0.187 0.239 0.355 0.461 0.604 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD6836P70 Datasheet v3.0 REFERENCE DESIGN 5.15 TO 5.85 GHZ: FREQUENCY GHZ 5.5 FPD6836P70 5.5GHz Eval Board Biased @ 5V, 55mA 20 DB(|S(2,1)|) Gain dB 16 15 N.F. dB 1.0 10 DB(|S(1,1)|) DB(|S(2,2)|) 5 P1dB dBm 19.5 IP3 dBm 30 S11 dB -6 S22 dB -26 Vd V 5 Vg V -0.4 to -0.6 Id mA 55 dB 0 -5 -10 -15 -20 -25 -30 2 3 4 5 6 Frequency (GHz) 7 8 9 SCHEMATIC CAP ID=C2 C=33 pF MTEE ID=TL10 W1=45 mil W2=70 mil W3=45 mil 1 MLIN ID=TL2 W=70 mil L=420 mil 2 MTEE ID=TL9 W1=70 mil W2=40 mil W3=40 mil 1 3 MLIN ID=TL3 W=40 mil L=100 mil 2 2 MLIN ID=TL5 W=5 mil L=280 mil MRST UB2 ID=TL8 Ri=20 mil Ro=350 mil Theta=90 Deg MLIN ID=TL4 W=50 mil L=100 mil CAP ID=C1 C=33 pF MLIN ID=TL17 W=150 mil L=120 mil MTEE ID=TL21 W1=150 mil W2=45 mil W3=45 mil 1 1 3 SUBCKT ID=Q1 NET="FET" 1 MLEF ID=TL1 W=40 mil L=190 mil MLIN ID=TL6 W=45 mil L=30 mil MTEE ID=TL22 W1=150 mil W2=100 mil W3=220 mil CAP ID=C4 C=33 pF 2 2 3 PORT P=1 Z=50 Ohm RES ID=R1 R=20 Ohm MLIN ID=TL19 W=100 mil L=100 mil 3 MLEF ID=TL11 W=220 mil L=380 mil MLIN ID=TL16 W=5 mil L=310 mil CAP ID=C5 C=33 pF CAP ID=C7 C=1000000 pF PORT P=3 Z=50 Ohm MRSTUB2 ID=TL20 Ri=20 mil Ro=268 mil Theta=90 Deg MLIN ID=TL14 W=50 mil L=100 mil MLIN ID=TL15 W=50 mil L=50 mil DCVS ID=VD V=5 V DCVS ID=VG V=-0.5 V 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD6836P70 Datasheet v3.0 BOARD LAYOUT Q1 33pF 33pF Q1 20 Ohms P1 P2 33pF 33pF 0.01uF 0.01uF 1.0uF 1.0uF 6 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD6836P70 Datasheet v3.0 S-PARAMETERS BIASED @ 5V, 55mA: FREQ[GHz] 0.500 0.750 1.000 1.250 1.500 1.750 2.000 2.250 2.500 2.750 3.000 3.250 3.500 3.750 4.000 4.250 4.500 4.750 5.000 5.250 5.500 5.750 6.000 6.250 6.500 6.750 7.000 7.250 7.500 7.750 8.000 8.250 8.500 8.750 9.000 9.250 9.500 9.750 10.000 10.250 10.500 10.750 11.000 11.250 11.500 11.750 12.000 12.250 12.500 12.750 13.000 S11m 0.976 0.953 0.925 0.894 0.860 0.827 0.796 0.767 0.742 0.718 0.694 0.672 0.650 0.629 0.614 0.600 0.587 0.571 0.555 0.540 0.529 0.521 0.511 0.504 0.499 0.496 0.493 0.492 0.491 0.483 0.486 0.483 0.479 0.475 0.473 0.473 0.476 0.483 0.488 0.495 0.507 0.521 0.539 0.560 0.581 0.603 0.626 0.645 0.662 0.675 0.685 S11a -20.9 -31.4 -41.3 -51.2 -60.7 -69.7 -78.2 -86.3 -93.6 -100.5 -106.8 -112.6 -117.8 -122.6 -127.3 -132.1 -136.8 -142.0 -147.0 -152.4 -158.0 -163.8 -170.2 -176.6 177.0 170.4 163.9 157.5 151.2 145.5 140.4 135.3 130.8 126.5 122.5 118.4 114.1 109.1 103.4 97.7 91.7 85.7 79.8 74.3 69.2 64.8 60.8 57.1 53.7 50.5 47.6 S21m 11.395 11.087 10.729 10.279 9.807 9.315 8.842 8.385 7.951 7.554 7.180 6.833 6.521 6.232 6.002 5.788 5.605 5.418 5.249 5.096 4.967 4.850 4.729 4.606 4.498 4.377 4.261 4.135 4.007 3.876 3.784 3.679 3.588 3.509 3.448 3.415 3.397 3.376 3.339 3.312 3.279 3.229 3.166 3.091 3.021 2.945 2.877 2.804 2.738 2.666 2.604 S21a 161.5 153.2 145.1 137.3 130.0 123.1 116.7 110.6 104.9 99.5 94.5 89.6 85.1 80.9 76.7 72.7 68.5 64.2 60.3 56.3 52.3 48.1 43.7 39.5 35.3 31.0 26.8 22.5 18.4 14.8 11.2 7.5 4.1 0.9 -2.4 -5.6 -9.1 -13.2 -17.3 -21.4 -25.9 -30.4 -35.0 -39.4 -43.7 -47.8 -51.9 -56.0 -60.1 -64.2 -68.2 S12m 0.011 0.016 0.021 0.025 0.029 0.032 0.034 0.036 0.038 0.040 0.041 0.042 0.043 0.043 0.044 0.045 0.046 0.048 0.048 0.048 0.049 0.051 0.052 0.054 0.055 0.056 0.057 0.057 0.058 0.057 0.057 0.057 0.058 0.058 0.059 0.062 0.066 0.070 0.073 0.077 0.080 0.083 0.086 0.089 0.091 0.093 0.095 0.096 0.097 0.098 0.100 S12a 78.3 72.8 67.8 62.9 58.6 54.8 51.4 48.1 46.0 42.6 40.4 38.5 36.3 34.7 33.9 33.4 32.1 30.0 28.4 26.8 26.0 25.4 23.3 21.1 19.2 17.0 14.0 11.9 9.4 7.6 6.4 4.8 5.0 4.5 5.2 5.6 5.0 3.1 0.9 -1.5 -3.5 -6.7 -10.1 -12.3 -15.6 -18.5 -21.4 -24.2 -26.8 -29.7 -32.5 S22m 0.635 0.626 0.614 0.598 0.583 0.567 0.553 0.540 0.528 0.517 0.506 0.496 0.487 0.479 0.475 0.471 0.467 0.460 0.453 0.447 0.443 0.441 0.438 0.428 0.418 0.405 0.391 0.376 0.361 0.348 0.340 0.333 0.331 0.330 0.332 0.340 0.347 0.354 0.355 0.360 0.360 0.357 0.349 0.338 0.327 0.316 0.307 0.300 0.295 0.293 0.295 S22a -11.5 -17.0 -22.2 -26.9 -30.9 -34.6 -37.9 -40.8 -43.6 -46.2 -48.9 -51.2 -53.5 -55.5 -57.7 -59.5 -62.3 -64.6 -66.4 -68.2 -70.0 -72.6 -76.0 -78.8 -81.2 -84.3 -87.6 -90.7 -93.6 -96.1 -99.1 -101.7 -104.6 -107.2 -109.6 -112.7 -116.0 -120.7 -124.8 -129.3 -134.3 -139.9 -145.6 -151.3 -157.2 -163.3 -169.6 -176.1 177.6 171.3 165.3 7 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD6836P70 Datasheet v3.0 S-PARAMETERS BIASED AT 5V, 55mA CONTINUED: FREQ[GHz] 13.250 13.500 13.750 14.000 14.250 14.500 14.750 15.000 15.250 15.500 15.750 16.000 16.250 16.500 16.750 17.000 17.250 17.500 17.750 18.000 18.250 18.500 18.750 19.000 19.250 19.500 19.750 20.000 20.250 20.500 20.750 21.000 21.250 21.500 21.750 22.000 22.250 22.500 22.750 23.000 23.250 23.500 23.750 24.000 24.250 24.500 24.750 25.000 25.250 25.500 25.750 26.000 S11m 0.693 0.701 0.711 0.724 0.738 0.755 0.771 0.787 0.800 0.808 0.813 0.818 0.822 0.822 0.824 0.831 0.839 0.845 0.852 0.852 0.848 0.841 0.829 0.815 0.805 0.796 0.786 0.780 0.778 0.776 0.777 0.779 0.782 0.784 0.785 0.786 0.783 0.777 0.772 0.774 0.771 0.755 0.750 0.744 0.741 0.732 0.718 0.704 0.688 0.677 0.673 0.677 S11a 44.9 42.1 39.3 36.2 32.8 29.1 25.2 20.9 17.0 13.2 9.2 5.2 1.3 -2.4 -5.9 -9.6 -12.5 -15.3 -17.6 -19.5 -20.5 -20.9 -20.6 -20.5 -20.7 -21.6 -23.6 -26.8 -30.7 -35.6 -41.3 -46.8 -52.0 -56.4 -59.8 -62.1 -63.5 -65.4 -67.7 -70.1 -73.2 -76.1 -79.2 -81.7 -84.1 -86.5 -89.2 -90.9 -95.1 -99.6 -105.6 -111.1 S21m 2.545 2.488 2.434 2.392 2.347 2.307 2.262 2.225 2.184 2.144 2.110 2.067 2.024 1.973 1.915 1.855 1.788 1.721 1.663 1.603 1.553 1.508 1.473 1.440 1.415 1.398 1.389 1.382 1.375 1.369 1.356 1.333 1.309 1.279 1.241 1.195 1.162 1.124 1.098 1.073 1.054 1.043 1.028 1.025 1.027 1.031 1.047 1.061 1.074 1.080 1.086 1.065 S21a -72.1 -76.1 -79.9 -83.8 -87.7 -91.8 -95.7 -99.7 -103.8 -107.9 -112.2 -116.6 -121.1 -125.6 -130.0 -134.4 -138.4 -142.1 -145.7 -148.6 -151.4 -154.2 -156.6 -159.3 -161.9 -164.8 -167.6 -171.2 -175.1 -179.4 175.9 171.2 166.1 161.1 156.3 152.0 147.9 144.2 140.5 137.2 133.8 130.5 127.1 123.5 120.0 116.1 112.0 107.3 102.3 97.0 90.9 85.8 S12m 0.101 0.102 0.103 0.106 0.107 0.107 0.109 0.109 0.110 0.112 0.112 0.112 0.113 0.112 0.111 0.108 0.108 0.106 0.105 0.103 0.102 0.102 0.100 0.102 0.102 0.102 0.104 0.106 0.107 0.109 0.109 0.109 0.110 0.108 0.109 0.110 0.108 0.108 0.108 0.108 0.109 0.112 0.110 0.112 0.116 0.120 0.127 0.132 0.135 0.143 0.146 0.148 S12a -35.0 -37.8 -40.4 -43.3 -46.7 -48.9 -51.8 -55.1 -58.6 -61.9 -65.3 -68.4 -71.6 -75.7 -78.8 -83.5 -86.4 -88.7 -92.6 -94.2 -96.3 -98.6 -100.6 -103.0 -105.7 -107.4 -110.4 -113.5 -118.2 -121.5 -126.2 -130.7 -135.0 -140.3 -144.2 -148.4 -152.0 -155.3 -159.3 -162.4 -164.5 -169.1 -171.7 -175.2 -178.7 178.5 174.2 170.0 165.2 159.3 154.0 147.8 S22m 0.299 0.302 0.308 0.312 0.314 0.317 0.318 0.320 0.323 0.326 0.334 0.340 0.348 0.357 0.366 0.373 0.379 0.387 0.396 0.406 0.418 0.429 0.437 0.449 0.456 0.456 0.460 0.460 0.455 0.452 0.444 0.438 0.432 0.424 0.421 0.417 0.420 0.426 0.428 0.428 0.436 0.434 0.443 0.433 0.429 0.418 0.407 0.396 0.372 0.349 0.327 0.298 S22a 159.0 153.3 147.9 142.7 138.2 133.8 129.6 125.4 120.5 115.7 110.0 103.9 97.3 90.3 82.9 76.1 69.3 63.5 58.6 54.7 51.6 48.5 46.0 43.1 40.7 39.3 38.7 37.9 36.9 35.7 34.4 31.4 26.9 20.6 13.6 6.0 -1.5 -7.9 -12.7 -16.5 -19.5 -22.0 -25.3 -29.0 -33.5 -36.8 -41.2 -46.5 -50.7 -57.2 -64.2 -71.0 8 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPD6836P70 Datasheet v3.0 PACKAGE OUTLINE: (dimensions in millimeters – mm) PREFERRED ASSEMBLY INSTRUCTIONS: DISCLAIMERS: Available on request. This product is not designed for use in any space based or life sustaining/supporting equipment. HANDLING PRECAUTIONS: ORDERING INFORMATION: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114-B (Human Body Model) and Class 0 (0250V) per JESD22-A115-A (Machine Model). Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. PART NUMBER DESCRIPTION FPD6836P70 Packaged pHEMT APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request. 9 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com