Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0␣ GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz • Low Noise Figure: 2.0 dB Typical NFO at 2.0␣ GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Low Cost Plastic Package Description Hewlett-Packard’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50␣ Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. 85 Plastic Package The AT-42085 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 4-169 5965-8913E AT-42085 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Absolute Maximum[1] 1.5 20 12 80 500 150 -65 to 150 Units V V V mA mW °C °C Thermal Resistance [2,4]: θjc = 130°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 7.7 mW/°C for TC > 85°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz dB 15.5 17.0 11.0 5.0 f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz dBm G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz fT Gain Bandwidth Product: VCE = 8 V, IC = 35 mA hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz |S21E|2 Insertion Power Gain; VCE = 8 V, IC = 35 mA P1 dB Note: 1. For this test, the emitter is grounded. 4-170 20.5 20.0 14.0 9.5 dB 2.0 3.5 13.5 9.5 dB GHz — µA µA pF 8.0 30 150 0.32 270 0.2 2.0 AT-42085 Typical Performance, TA = 25°C 24 2.0 GHz 12 2.0 GHz 20 4.0 GHz P1dB 16 6V 16 4V P1dB 12 12 0 10 20 30 40 G1dB 8 4 50 4.0 GHz 0 10 20 IC (mA) 30 40 IC (mA) Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 21 MSG 30 18 GAIN (dB) 25 20 MAG 15 |S21E|2 12 5 3 0 0 0.5 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. 4 9 6 0.1 GA 15 10 3 NFO 2 1 1.0 2.0 0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. 4-171 0 10 20 30 40 50 Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 24 35 G1dB 12 IC (mA) Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 40 10 V 6V 4V 14 10 50 NFO (dB) 0 16 G1 dB (dB) 4.0 GHz 4 GAIN (dB) 10 V 20 2.0 GHz 8 G1 dB (dB) |S21E|2 GAIN (dB) 16 24 P1 dB (dBm) 1.0 GHz P1 dB (dBm) 20 AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .72 -50 28.5 26.52 152 0.5 .66 -139 21.0 11.23 103 1.0 .65 -168 15.5 5.96 84 1.5 .65 175 12.2 4.06 71 2.0 .65 163 9.7 3.06 60 2.5 .66 157 8.0 2.51 55 3.0 .68 149 6.3 2.07 46 3.5 .68 141 5.1 1.79 38 4.0 .69 133 3.9 1.57 29 4.5 .69 125 3.0 1.41 21 5.0 .69 114 2.2 1.28 12 5.5 .71 103 1.4 1.17 3 6.0 .75 91 0.6 1.07 -6 dB -37.0 -29.2 -28.6 -27.0 -25.3 -24.0 -22.8 -21.4 -19.7 -18.5 -17.1 -15.9 -15.1 S12 Mag. .014 .035 .037 .045 .054 .063 .072 .085 .104 .119 .139 .161 .177 Ang. 73 36 39 46 51 60 65 64 64 63 58 55 49 Mag. .90 .53 .45 .43 .42 .42 .41 .43 .45 .46 .47 .44 .40 S22 dB -40.1 -32.8 -29.5 -26.4 -23.9 -22.5 -21.2 -19.8 -18.6 -17.2 -16.4 -15.3 -14.5 S12 Mag. .010 .023 .034 .048 .064 .075 .088 .102 .117 .138 .152 .171 .188 Ang. 66 52 61 68 66 68 69 67 65 60 56 50 46 Mag. .76 .38 .34 .32 .31 .31 .30 .31 .33 .35 .35 .34 .31 Ang. -16 -32 -33 -36 -41 -42 -48 -55 -61 -66 -71 -76 -85 AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .54 -90 33.1 45.38 137 0.5 .61 -163 22.6 13.45 95 1.0 .61 178 16.8 6.90 79 1.5 .62 167 13.4 4.67 68 2.0 .63 156 10.9 3.52 59 2.5 .64 152 9.2 2.89 54 3.0 .66 146 7.6 2.39 45 3.5 .67 139 6.3 2.07 37 4.0 .68 131 5.2 1.81 28 4.5 .68 123 4.2 1.62 19 5.0 .68 114 3.4 1.48 10 5.5 .71 103 2.5 1.34 1 6.0 .74 93 1.7 1.21 -8 A model for this device is available in the DEVICE MODELS section. AT-42085 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB 0.1 0.5 1.0 2.0 4.0 1.1 1.2 1.3 2.0 3.5 Γopt Mag .05 .06 .10 .24 .46 Ang 16 77 131 -179 -128 4-172 RN/50 0.13 0.13 0.12 0.11 0.25 S22 Ang. -26 -30 -28 -31 -36 -40 -48 -58 -67 -73 -79 -85 -96 85 Plastic Package Dimensions .020 .51 EMITTER 4 0.143 ± 0.015 3.63 ± 0.38 1 BASE COLLECTOR 2 EMITTER .060 ± .010 1.52 ± .25 3 420 45° in .xxx = ± 0.005 mm .xx = ± 0.13 .085 2.15 5° TYP. .07 0.43 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances .006 ± .002 .15 ± .05 .286 ± .030 7.36 ± .76 4-173