3MBI150UC-120 IGBT Module U-Series Features 1200V / 150A 3 in one-package Applications · High speed switching · Voltage drive · Inverter for Motor drive · AC and DC Servo drive amplifier · Low inductance module structure · With shunt resistors · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 -IC -IC pulse PC Tj Tstg Viso Conditions Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C 1 device AC:1min. Rating 1200 ±20 200 150 400 300 150 300 735 +150 -40 to +125 2500 3.5 Unit V V A W °C VAC N·m *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip*3 Shunt resistance Symbols ICES IGES VGE(th) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (chip) t rr R lead R shunt Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=150mA VGE=15V, IC=150A Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=150A VGE=±15V RG=2.2 Ω Tj=25°C Tj=125°C IF=150A IF=150A Without shunt resistance Resistance of R1 to R6 *4 VGE=0V Characteristics Min. Typ. – – – – 4.5 6.5 – 1.75 – 2.00 – 17 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 1.60 – 1.70 – – – 5.1 – 2.4 Max. 1.0 200 8.5 2.10 – – 1.20 0.60 – 1.00 0.30 1.90 – 0.35 – – Unit Characteristics Min. Typ. – – – – – 0.05 Max. 0.17 0.28 – mA nA V V nF µs V µs mΩ *3: Biggest internal terminal resistance among arm. *4 R1 to R2 is shown in equivalent circuit (p5) Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound. Unit °C/W °C/W °C/W IGBT Module 3MBI150UC-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Tj= 125°C / chip 400 400 VGE=20V 15V 12V VGE=20V 15V 200 Collector current : Ic [A] Collector current : Ic [A] 12V 300 300 10V 100 200 10V 100 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 2 Collector current vs. Collector-Emitter voltage (typ.) 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip 400 Collector - Emitter voltage : VCE [ V ] 10 T j=25°C 300 Collector current : Ic [A] 3 Collector-Emitter voltage : VCE [V] T j=125°C 200 100 8 6 4 Ic=300A Ic=150A Ic= 75A 2 0 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 10 15 20 25 600 800 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1M Hz, Tj= 25°C Vcc=600V, Ic=150A, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies 10.0 Cres 1.0 Coes VGE VCE 0 0.1 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 200 400 Gate charge : Qg [ nC ] IGBT Module 3MBI150UC-120 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 25°C Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj=125°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 10 0 50 100 150 200 250 0 300 Collector current : Ic [ A ] 150 200 250 Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C Vcc=600V, VGE=±15V, Rg=2.2Ω 30 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 100 ton toff 1000 tr 100 300 Collector current : Ic [ A ] 10000 tf Eoff(125°C) Eon(125°C) 25 20 Eoff(25°C) Eon(25°C) 15 10 Err(125°C) Err(25°C) 5 10 0 0.1 1.0 10.0 100.0 1000.0 0 100 200 300 Collector current : Ic [ A ] Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj <= 125°C 125 400 Eon 100 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 50 75 50 Eoff 25 300 200 100 Err 0 0 0.1 1.0 10.0 Gate resistance : Rg [ Ω ] 100.0 1000.0 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] 3MBI150UC-120 IGBT Module Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=600V, VGE=+-15V, Rg=22 ohm 1000 400 T j=25°C 300 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 350 250 T j=125°C 200 150 100 trr (125°C) Irr (125°C) Irr (25°C) trr (25°C) 100 50 10 0 0 1 2 3 4 Forward on voltage : VF [ V ] 1.000 Thermal resistanse : Rth(j-c) [ °C/W ] FWD IGBT 0.100 0.010 0.010 0.100 Pulse width : Pw [ sec ] 100 200 Forward current : IF [ A ] Transient thermal resistance (max.) 0.001 0.001 0 1.000 300 IGBT Module 3MBI150UC-120 Outline Drawings, mm M635 ( ) shows reference dimension. Equivalent Circuit Schematic 19,20,21 35 38 R1 34 39 29 32 33 R3 28 U 4,5,6 1,2,3 37 R2 36 7,8,9 31 R4 30 26 27 V 10,11,12 13,14,15 23 R5 22 W 16,17,18 25 R6 24