6MBP50TEA060 600V / 50A 6 in one-package Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Collector-Emitter voltage *1 Collector current Inverter DC 1ms Duty=76.1% *2 Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5) Symbol Rating Min. Max. VDC VDC(surge) V SC VCES IC ICP -IC PC V CC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 - 450 500 400 600 50 100 50 144 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W V V mA V mA °C °C °C °C V N·m Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W *2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/1.263/(50 x 2.6) x 100=76.1% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.87=144W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 10±1sec. 6MBP50TEA060 IGBT-IPM Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Inverter Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition) Symbol ICES VCE(sat) VF ton toff trr PAV Condition Min. Typ. Max. Unit VCE=600V Vin terminal open. Ic=50A Terminal Chip -Ic=50A Terminal Chip VDC=300V,Tj=125°C 1.2 IC=50A Fig.1, Fig.6 VDC=300V, IC=50A Fig.1, Fig.6 Internal wiring inductance=50nH 30 Main circuit wiring inductace=54nH 2.0 1.6 - 1.0 2.5 2.6 3.6 0.3 - mA V V µs mJ Control circuit Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Item Symbol Iccp ICCN Vin(th) Input zener voltage Alarm signal hold time VZ tALM Current limit resistor RALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Alarm terminal Min. Typ. Max. 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Unit mA mA V V V ms ms ms ohm Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH V UV VH Condition Min. 75 150 11.0 0.2 Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips Typ. Max. 5 - 8 - 12.5 - 20 0.5 Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *10 Inverter IGBT FWD Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(c-f) Min. - Typ. 0.05 Max. 0.87 1.263 Unit °C/W °C/W - °C/W Min. Typ. Max. Unit *10 : (For 1 device, Case is under the device) Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs ±2.0 - - kV ±5.0 - - kV Symbol V DC V CC - Min. 13.5 2.5 Typ. 15.0 - Max. 400 16.5 3.0 Unit V V Nm Symbol Wt Min. - Typ. 270 Max. - Unit g Interval 20s, 10 times Judge : no over-current, no miss operating Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Weight Item Weight Unit A µs µs °C °C V V 6MBP50TEA060 IGBT-IPM Vin(th) Vin On Vin(th) trr 90% 50% Ic 90% 10% toff ton Figure 1. Switching Time Waveform Definitions ) on on Gate On Vge (Inside IPM ) Fault (Inside IPM off off /Vin Gate Off normal alarm /ALM tALM > Max. 1 tALM > t ALM 2ms(typ.) 3 Max. 2 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic Ic Ic I ALM I ALM I ALM Figure.4 Definition of tsc Vcc PP IPM IPM 20 k DC 15V VccU 20k DC 15V VinU SW1 P IPM SW2 Earth GND GND N Ic AC200V V DC 15V DC 300V U GNDU Vcc 20k VinX + + Vin HCPL 4504 CT L Figure 6. Switching Characteristics Test Circuit + W Icc A 4700p N Cooling Fin Vcc P Noise DC 15V IPM U Vin V P.G +8V fsw W GND N Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 6MBP50TEA060 IGBT-IPM Block diagram P VccU 4 VinU 3 AL MU 2 Pre- Driver R ALM 1.5k GNDU 1 Vcc V 8 VinV 7 AL MV 6 U Pre- Driver R ALM 1.5k GNDV 5 VccW 12 VinW 11 AL MW 10 Vz V Pre- Driver R ALM 1.5k GNDW Vz Vz 9 Vcc 14 VinX 16 W Pre- Driver Vz GND VinY 13 17 Pre- Driver Vz VinZ Pre-drivers include following functions 1.Amplifier for driver 2.Short circuit protection 3.Under voltage lockout circuit 18 Pre- Driver Vz B VinDB 15 AL M 19 4.Over current protection 5.IGBT chip over heating protection R ALM 1.5k N MBCFM Outline drawings, mm Mass : 270g 6MBP50TEA060 IGBT-IPM Characteristics Control circuit characteristics (Respresentative) Input signal threshold voltage vs. P ower sup ply voltag e P ower sup ply current vs. Switching frequency Tc=1 25°C 2 .5 P-sid e N-sid e 50 40 V cc=17V V cc=15V 30 V cc=13V 20 V cc= 17V 10 Inp u t sig na l thres hold voltag e : Vin (on),Vin (o ff) (V) Pow er su p ply c urre nt : Icc (m A) 60 2 } Vin(off) 1 .5 1 0 .5 0 0 5 10 15 20 25 12 13 14 15 16 17 18 Power su p p ly voltag e : Vcc (V) Switch ing frequency : fs w (k Hz) Un d er voltag e h ysterisis vs. Jn ction tem p erature Under voltage vs. Junction temp erature 14 Under vol tage h ys teris is : VH (V) 1 12 Und er voltag e : VUVT (V) } Vin(on) V cc= 15V V cc= 13V 0 10 8 6 4 2 0 0 .8 0 .6 0 .4 0 .2 0 20 40 60 80 100 12 0 140 20 40 60 80 100 12 0 Ju nc tion te m pe ra tu re : Tj (°C) Ju nc tion te m pe ra tu re : Tj (°C) Alarm hold tim e vs. P ower sup ply voltag e Over heatin g characteristics TjOH,TjH vs. Vcc 140 20 0 O ver he atin g p rote ction : TjO H (°C) OH hy ste risis : Tj H (°C) 3 Ala rm h ol d tim e : tALM (m Se c) Tj=25°C Tj= 12 5°C 2 .5 Tc= 10 0° C 2 Tc =25°C 1 .5 1 0 .5 0 TjO H 15 0 10 0 50 TjH 0 12 13 14 15 16 17 Power s up p ly voltage : Vcc (V) 18 12 13 14 15 16 17 Power su p p ly voltag e : Vcc (V) 18 6MBP50TEA060 IGBT-IPM Main circuit characteristics (Respresentative) Collector curren t vs. Collector-Em itter voltag e Tj=25 ° C(Chip) Collector current vs. Collector-Em itter voltage Tj=25°C(Term inal) 60 60 V cc= 15V 50 Coll ec to r Cu rre nt : Ic (A) Coll ec to r Cu rre nt : Ic (A) V cc=15V V cc=13V Vc c= 17V 40 30 20 10 50 40 30 20 10 0 0 0 0 .5 1 1.5 2 2.5 0 3 0 .5 1 1.5 2 2.5 3 Co llector-Em itter vo lta g e : Vce (V) Collector curren t vs. Collector-Em itter voltag e Tj=125°C(Chip) Collector curren t vs. Collector-Em itter voltag e Tj=125°C(Term inal) 60 60 V cc=15V 50 V cc=17V V cc=13V 40 30 20 V cc=15V 50 Collector Cu rre nt : Ic (A) Collector Cu rre nt : Ic (A) Co llector-Em itter vo lta g e : Vce (V) V cc=17V 40 V cc= 13V 30 20 10 10 0 0 0 0 .5 1 1.5 2 2.5 3 0 Co llector-Em itter vo lta g e : Vce (V) 80 80 Fo rw ard Current : If (A) 10 0 60 1 1.5 2 2.5 3 Forward current vs. Forward voltage (Term inal) 10 0 12 5° C 0 .5 Co llector-Em itter vo lta g e : Vce (V) Forward current vs. Forward voltage (Chip) Fo rw ard Cu rren t : If (A) V cc=13V V cc=17V 2 5°C 40 12 5° C 2 5°C 60 40 20 20 0 0 0 0.5 1 1.5 Fo rw ard vol ta ge : Vf (V) 2 2 .5 0 0.5 1 1.5 Fo rw ard vol ta ge : Vf (V) 2 2 .5 6MBP50TEA060 IGBT-IPM Switch in g l os s : Eon,Eo ff,Err (m J/cy cle) Switch in g los s : Eo n,Eo ff,Err (m J/cy cl e) Switching Loss vs.Collector Current Edc=30 0V,Vcc=15 V,Tj=25°C 6 5 4 3 Eon 2 1 Eoff E rr 0 Switching Loss vs.Collector Current Edc=300V,V cc=15V,Tj=1 25°C 6 Eon 5 4 3 2 Eoff 1 E rr 0 0 10 20 30 40 50 60 0 10 Collec tor cu rren t : Ic (A) 20 30 40 50 60 Collec tor cu rren t : Ic (A) Th erm al res is ta nc e : R th (j-c) (°C /W ) Transient therm al resistance FW D 1 IG B T 0 .1 0.01 0.00 1 0.0 1 0 .1 1 Pu lse width :Pw (sec) Power derating for IG BT (per device) Power derating for FW D (per device) 15 0 Co llecter P owe r D is sipatio n : P c (W ) Co lle cter Power D issip ation : P c (W ) 15 0 10 0 50 10 0 50 0 0 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (°C) 0 20 40 60 80 100 12 0 14 0 160 Case Tem p eratu re : Tc (°C) 6MBP50TEA060 Switching tim e vs. Collector current Ed c=3 00V,Vcc=1 5V,Tj=12 5° C Switching tim e vs. Collector current E dc=300V,Vcc=15V,Tj=25°C 10 00 0 Switc h ing tim e : ton ,to ff,tf (n Se c) Switch in g tim e : ton ,to ff,tf (n Se c) 10 000 IGBT-IPM to n to ff 1 000 100 tf 10 20 40 50 60 70 80 10 0 tf trr125°C trr2 5° C 10 0 Irr12 5°C 10 Irr2 5° C 1 30 40 50 60 Fo rw ard cu rren t:IF(A) 20 30 40 50 60 Col lector cu rren t : Ic (A) Reverse recovery characteristics trr,Irr vs.IF R eve rse rec overy cu rre n t:Irr(A) Reverse recovery time:trr(n se c) to ff 1 00 0 10 30 Col lector cu rren t : Ic (A) 20 to n 70 80 70 80