6R1MBi100P-160 Diode Module Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A Features · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Symbol Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current V RRM V RSM One cycle surge current I2t Operation junction temperature Collector-Emitter voltage Gate-Emitter voltage Collector current IFSM I2t Tj VCES VGES IC Brake Converte Item Collector power disspation Repetitive peak reverse voltage Operation junction temperature IO Condition Rating 1600 1760 ICP 1ms PC V RRM Tj Tstg Viso 1 device Tc=25°C Tc=75°C Tc=25°C Tc=75°C 2 his pr 1000 4000 -40 to +125 1400 ±20 75 50 150 100 360 1400 +150 -40 to +125 2500 2.0 to 2.5 rc a 予 止 on m A W V °C °C V N·m 保uled befor new AC : 1 minute M5 screw A A 2s °C V V A 種07. 機 定 h 20 ete ign. 廃 l o 守 obs des 月sched mend 3 年 is com t 7 c 00 odu t re Storage junction temperature Isolation voltage Mounting screw torque V V A 100 50Hz/60Hz sine wave Tc=110°C From rated load From rated load DC Unit Electrical characteristics (Tj=25°C unless otherwise specified) Brake Co. Item Fofward voltage Reverse current Zero gate voltage Collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time T Turn-off time Reverse current Symbol o N V FM IRRM ICES IGES VCE(sat) ton tr toff tf IRRM Condition Min. Tj=25°C, IFM=100A Tj=150°C, VR=VRRM VGE=0V. V CE=1400V VCE =0V. VGE=±20V VGE=15V. IC=50A Vcc=800V Ic=50A VGE=±15V RG=25ohm Typ. 2.4 0.35 0.25 0.45 0.08 Max. 1.30 20 1.0 200 2.8 1.2 0.6 1.0 0.3 1.0 Unit Max. Unit V mA mA nA V µs mA Thermal characteristics Item Symbol Thermal resistance Rth(j-c) Thermal Resistance(Case to fine) Rth(c-f) Condition Converter Per total loss Per each device Brake IGBT (1 device) with thermal compound Min. Typ. 0.14 0.84 0.55 0.08 °C/W °C/W Diode Module 6R1MBi100P-160 O u tp u t C u r r e n t - T o ta l L o s s Forward Characteristics 300 100 max 90 250 typ Forw ard Current V F(V ) 80 70 60 Total Loss (W) 200 150deg 50 40 25deg 150 100 30 20 50 10 0 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 50 100 150 O u tp i t C u r r e n t Io ( A ) Forward Current IF(A) S u r g e C u rr e n t O u tp u t C u r r e n t - C a s e T e m p e r a tu r e 1200 130 種07. 機 定 h 20 1000 Peak Surge Current IFSM (A) Case Tempreture Tc (deg.C) 120 110 100 90 800 600 rc a 予 止 on m ete ign. 廃 l o 守 obs des 80 400 保uled befor new 70 200 60 50 0 月sched mend 3 年 is com t 7 c 00 odu t re 50 100 0 0 .0 1 0 .1 O u t p u t C u r r e n t Io ( A ) 2 his pr No [ B ra ke ] Tra nsie nt The rm a l Im p e d a nc e Tra ns ie nt The rm a l Im p e d a nce 1 T 1 T im 10 Zth(j-c)(t) (deg.C/W) FW D Zth(j-c)(deg.C/w) 0.1 0.01 0.00 1 0.00 1 0.01 0.1 Tim e 1 10 1 IG BT 0 .1 0 .0 1 0 .0 0 1 0 .0 1 0 .1 T im e (s e c ) 1 10 6R1MBi100P-160 Diode Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) 120 120 VGE= 20V 15V 12V VGE= 20V 100 Collector current : Ic [ A ] Collector current : Ic [ A ] 100 80 10V 60 40 15V 12V 80 10V 60 40 20 20 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 120 種07. 機 定 h 20 Tj= 125°C Tj= 25°C Collector - Emitter voltage : VCE [ V ] 80 60 40 20 0 8 rc a 予 止 on m 6 ete ign. 廃 l o 守 obs des 4 Ic= 100A 保uled befor new Ic= 50A 2 月sched mend 3 年 is com t 7 c 00 odu t re Ic= 25A 0 0 1 2 3 4 5 5 10 Collector - Emitter voltage : VCE [ V ] 2 his pr T 10000 Collector - Emitter voltage : VCE [ V ] No Cies Coes 1000 Cres 100 20 25 [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=50A, Tj= 25°C [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 20000 15 Gate - Emitter voltage : VGE [ V ] 1000 25 800 20 600 15 400 10 200 5 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 100 200 300 Gate charge : Qg [ nC ] 400 0 500 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 5 10 100 Capacitance : Cies, Coes, Cres [ pF ] 4 Collector - Emitter voltage : VCE [ V ] Diode Module 6R1MBi100P-160 Outline Drawings, mm 90 78.5 11.75 4- Ø 6.1 14 7 7 21 C3 7 0.5 2- Ø5.5 - E G 11 + 32 11 16 23.5 C K 14 14 28.5 3 Ø 2.5 R1 3.4 2 x t1 1.5 Ø 2.1 13 ete ign. 廃 l o 守 obs des JAPAN 保uled befor new 月sched mend 3 年 is com t 7 c 00 odu t re Equivalent Circuit Schematic 2 his pr T 17 rc a 予 止 on m 6 6R1MBi100P-160 種07. 機 定 h 20 20.4 11.75 No K C G E