7MBR10SA140 IGBT Modules IGBT MODULE (S series) 1400V / 10A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage Continuous ICP 1ms Collector current Brake Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Condition VCES VGES IC Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque -IC PC VCES VGES IC Rating Tc=25°C Tc=75°C Tc=25°C Tc=75°C 1 device Continuous ICP 1ms PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1 device Tc=25°C Tc=75°C Tc=25°C Tc=75°C 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. 1400 ±20 15 10 30 20 10 75 1400 ±20 15 10 30 20 75 1400 1600 10 105 55 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A A A W V V A A W V V A A A 2s °C °C V N·m 7MBR10SA140 IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.2 2.25 2.7 1200 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr tr(i) toff tf VF Turn-off Brake Forward on voltage IF=10A 0.35 0.25 0.1 0.45 0.08 2.4 2.45 chip terminal Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current Forward on voltage ton tr toff tf IRRM VFM Reverse current Resistance IRRM R B value B IF=10A VCES=1400V, VGE=0V VCE=0V, VGE=±20V IC=10A, VGE=15V chip terminal V CC =800V IC=10A VGE=±15V RG=120 Ω V R=1400V IF=10A chip terminal VR=1600V T=25°C T=100°C T=25/50°C Symbol Condition Turn-off time Converter VCE=1400V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=10mA VGE=15V, Ic=10A chip terminal VGE=0V, VCE=10V, f=1MHz V CC =800V IC=10A VGE=±15V RG=120Ω 1.2 0.6 V 3.3 0.35 1.0 0.2 2.7 1.2 0.6 1.0 0.3 1.0 1.1 1.2 465 3305 pF µs 1.0 0.3 2.2 2.3 0.35 0.25 0.45 0.08 5000 495 3375 mA µA V V 1.5 1.0 520 3450 µs mA µA V µs mA V mA Ω K Thermal resistance Characteristics Item Min. Thermal resistance ( 1 device ) Contact thermal resistance Rth(j-c) * Rth(c-f) Characteristics Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound 1.67 2.78 1.67 1.85 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] [Inverter] [Thermistor] 22(P1) 8 20(Gu) 1(R) 2(S) 3(T) 18(Gv) 19(Eu) 7(B) 14(Gb) 17(Ev) 4(U) 13(Gx) 16(Gw) 15(Ew) 5(V) 12(Gy) 6(W) 11(Gz) 10(En) 23(N) 24(N1) 9 Unit °C/W 7MBR10SA140 IGBT Module Characteristics (Representative) 25 25 VGE= 20V15V 12V VGE= 20V15V 12V 20 Collector current : Ic [ A ] 20 Collector current : Ic [ A ] [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 15 10V 10 15 10V 10 5 5 8V 8V 0 0 0 1 2 3 4 0 5 2 3 4 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 25 5 10 Tj= 25°C Tj= 125°C Collector - Emitter voltage : VCE [ V ] 20 Collector current : Ic [ A ] 1 Collector - Emitter voltage : VCE [ V ] 15 10 5 8 6 4 Ic= 20A Ic= 10A 2 Ic= 5A 0 0 1 2 3 4 5 5 10 Collector - Emitter voltage : VCE [ V ] 20 25 [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=10A, Tj= 25°C [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] 15 Gate - Emitter voltage : VGE [ V ] Cies 1000 500 Coes 1000 25 800 20 600 15 400 10 200 5 100 Cres 50 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 0 35 0 20 40 60 Gate charge : Qg [ nC ] 80 0 100 Gate - Emitter voltage : VGE [ V ] 0 7MBR10SA140 IGBT Module [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=120ohm, Tj= 125°C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=120ohm, Tj= 25°C 1000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff 500 ton tr 100 tf 500 ton tr tf 100 50 50 0 5 10 15 20 0 10 15 20 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=10A, VGE=±15V, Tj= 25°C [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=120ohm 5000 5 Switching loss : Eon, Eoff, Err [ mJ/pulse ] ton toff tr 1000 500 tf 100 4 Eon(125°C) 3 Eon(25°C) Eoff(125°C) 2 Eoff(25°C) 1 Err(125°C) Err(25°C) 50 50 0 100 500 1000 2000 0 5 Gate resistance : Rg [ohm] 10 15 20 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=10A, VGE=±15V, Tj= 125°C [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>120ohm, Tj=<125°C 8 25 Eon 20 6 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 5 Collector current : Ic [ A ] 4 Eoff 15 10 2 5 Err 0 50 0 100 500 Gate resistance : Rg [ohm] 1000 2000 0 200 400 600 800 1000 1200 1400 1600 1800 Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR10SA140 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=120ohm [ Inverter ] Forward current vs. Forward on voltage (typ.) 25 300 100 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] trr(125°C) Tj=125°C Tj=25°C 20 15 10 5 0 trr(25°C) 50 Irr(125°C) 10 Irr(25°C) 1 0 1 2 3 4 0 5 Forward on voltage : VF [ V ] 10 15 20 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 25 Tj= 25°C Forward current : IF [ A ] 20 Tj= 125°C 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 10 200 FWD[Inverter] Conv. Diode Resistance : R [ k ohm] Thermal resistanse : Rth(j-c) [ °C/W ] 100 IGBT [Inverter,Brake] 1 10 1 0.1 0.001 0.01 0.1 Pulse width : Pw [ sec ] 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C] 7MBR10SA140 IGBT Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 25 25 VGE= 20V15V 12V VGE= 20V15V 12V 20 Collector current : Ic [ A ] Collector current : Ic [ A ] 20 15 10V 10 5 15 10V 10 5 8V 8V 0 0 0 1 2 3 4 5 0 2 3 4 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 25 10 Tj= 25°C Tj= 125°C Collector - Emitter voltage : VCE [ V ] 20 Collector current : Ic [ A ] 1 Collector - Emitter voltage : VCE [ V ] 15 10 5 5 8 6 4 Ic= 20A Ic= 10A 2 Ic= 5A 0 0 1 2 3 4 5 5 10 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] 5000 Capacitance : Cies, Coes, Cres [ pF ] 20 25 [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=10A, Tj= 25°C [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Cies 1000 15 Gate - Emitter voltage : VGE [ V ] 500 1000 25 800 20 600 15 400 10 200 5 100 Coes Cres 50 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 20 40 60 Gate charge : Qg [ nC ] 80 0 100 Gate - Emitter voltage : VGE [ V ] 0 IGBT Module Outline Drawings, mm mass : 180g 7MBR10SA140