7MBR30U2A060 IGBT Modules IGBT MODULE (U series) 600V / 30A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless ptherwise specified) Item Symbol Condition Collector-Emitter voltage Gate-Emitter voltage Converter Brake Inverter VCES VGES IC Collector current ICP -IC -IC pulse Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage V RRM Repetitive peak reverse voltage V RRM Average output current IO Surge current (Non-Repetitive) IFSM I2t (Non-Repetitive) I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Continuous 1ms 1ms 1 device Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Rating 600 ±20 30 60 30 60 133 600 ±20 20 40 104 600 800 30 210 221 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A W V V A A W V V A A A 2s °C °C V N·m 7MBR30U2A060 IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 200 6.2 6.7 7.7 2.10 2.40 2.40 1.85 2.15 1.7 0.36 1.20 0.20 0.60 0.05 0.45 1.20 0.04 0.45 2.10 2.65 2.00 1.85 1.75 0.35 1.0 200 1.85 2.15 2.15 1.70 2.00 0.45 1.20 0.15 0.60 0.37 1.20 0.04 0.45 1.0 1.20 1.50 1.10 1.0 5000 465 495 520 3305 3375 3450 Unit Min. Reverse current Forward on voltage ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM V FM Reverse current Resistance IRRM R B value B Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Brake Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Thermistor Converter Turn-off time VCE=600V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=30mA Tj=25°C VGE=15V Tj=125°C Ic=30A Tj=25°C Tj=125°C VGE=0V, VCE=10V, f=1MHz V CC=300V IC=30A VGE=±15V RG=120Ω Tj=25°C Tj=125°C Tj=25°C Tj=125°C VGE=0V IF=30A IF=30A VCE=600V, VGE=0V VCE=0V, VGE=±20V Tj=25°C IC=20A Tj=125°C VGE=15V Tj=25°C Tj=125°C V CC=300V IC=20A VGE=±15V RG=150Ω V R=600V IF=30A VGE=0V V R=800V T=25°C T=100°C T=25/50°C terminal chip mA nA V V nF µs V µs mA nA V µs mA V mA Ω K Thermal resistance Characteristics Item Symbol Condition Min. Thermal resistance ( 1 device ) Rth(j-c) Contact thermal resistance Rth(c-f) * Characteristics Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound 0.94 1.60 1.20 1.20 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] [Thermistor] [Inverter] 22(P1) 8 20(Gu) 1(R) 2(S) 3(T) 18(Gv) 19(Eu) 7(B) 14(Gb) 15(Ew) 17(Ev) 4(U) 13(Gx) 16(Gw) 5(V) 12(Gy) 6(W) 11(Gz) 10(En) 23(N) 24(N1) 9 Unit °C/W 7MBR30U2A060 IGBT Module Characteristics (Representative) [ Inverter ] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Tj= 125°C / chip 80 80 VGE=20V 15V 40 Collector current : Ic [ A ] Collector current : Ic [ A ] VGE=20V 15V 12V 60 10V 20 12V 60 40 10V 20 8V 8V 0 0 0 1 2 3 4 5 0 1 Collector-Emitter voltage : VCE [ V ] 2 [ Inverter ] 5 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip 10 Tj=25°C 60 Collector-Emitter voltage : VCE [ V ] 80 Tj=125°C 40 20 0 8 6 4 Ic=60A Ic=30A Ic=15A 2 0 0 1 2 3 5 4 10 15 20 25 Gate-Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [ V ] [ Inverter ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25°C Vcc=300V, Ic=30A, Tj= 25°C Cies 1.00 Coes Cres 0.10 25 400 20 [V] Collector-Emitter voltage : VCE [ V ] 10.00 500 300 15 VGE 200 10 100 5 VCE 0 0.01 0 10 20 Collector-Emitter voltage : VCE [ V ] 30 0 0 20 40 60 80 100 Gate charge : Qg [ nC ] 120 140 Gate - Emitter voltage : VGE Collector current : Ic [ A ] 4 Collector-Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage (typ.) Capasitance : Cies, Coes, Cres [ nF ] 3 IGBT Module 7MBR30U2A060 [ Inverter ] [ Inverter ] Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=120Ω, Tj= 25°C Vcc=300V, VGE=±15V, Rg=120Ω, Tj=125°C 1000 toff ton ton toff tr Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 tr 100 tf 100 tf 10 10 0 20 40 60 0 60 [ Inverter ] [ Inverter ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=300V, Ic=30A, VGE=±15V, Tj= 25°C Vcc=300V, VGE=±15V, Rg=120Ω 3 Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff ton tr 1000 100 tf 10 10 100 1000 Eon(125°C) Eon(25°C) 2 Eoff(125°C) 1 Eoff(25°C) Err(125°C) Err(25°C) 0 10000 0 20 Gate resistance : Rg [ Ω ] 40 60 Collector current : Ic [ A ] [ Inverter ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=300V, Ic=30A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 120Ω ,Tj <= 125°C 80 12 Eon 10 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 40 Collector current : Ic [ A ] 10000 Switching time : ton, tr, toff, tf [ nsec ] 20 Collector current : Ic [ A ] 8 6 4 Eoff 60 40 20 2 Err 0 10 100 1000 Gate resistance : Rg [ Ω ] 0 10000 0 200 400 600 Collector-Emitter voltage : VCE [ V ] 800 IGBT Module 7MBR30U2A060 [ Inverter ] [ Inverter ] Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=300V, VGE=±15V, Rg=120Ω 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 80 60 Tj=25°C 40 Tj=125°C 20 100 trr (125°C) trr (25°C) 10 Irr (125°C) Irr (25°C) 0 1 0.0 1.0 2.0 3.0 4.0 0 20 Forward on voltage : VF [ V ] 40 60 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) chip Forward current : IF [ A ] 80 60 40 Tj=125°C Tj=25°C 20 0 0.0 0.5 1.0 1.5 2.0 Forward on voltage : VFM [ V ] [ Thermistor ] Temperature characteristics (typ.) Transient thermal resistance (max.) 100 FWD[Inverter] Resistance : R [ kΩ ] Thermal resistanse : Rth(j-c) [ °C/W ] 10.000 1.000 IGBT[Inverter] IGBT[Brake],Conv.Diod 0.100 0.010 0.001 10 1 0.1 0.010 0.100 Pulse width : Pw [ sec ] 1.000 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [ °C ] 7MBR30U2A060 IGBT Module [ Brake ] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Tj= 125°C / chip 50 50 15V 12V 40 30 10V 20 10 30 10V 20 10 8V 8V 0 0 0 1 2 3 4 5 0 Collector-Emitter voltage : VCE [ V ] 1 2 [ Brake ] 5 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip 10 Collector-Emitter voltage : VCE [ V ] 50 40 Collector current : Ic [ A ] 4 Collector-Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C 30 20 Tj=125°C 10 8 6 4 Ic=40A Ic=20A Ic=10A 2 0 0 0 1 2 3 5 4 10 15 20 25 Gate-Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [ V ] [ Brake ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25°C Vcc=300V, Ic=20A, Tj= 25°C Collector-Emitter voltage : VCE [ V ] 10.00 Capacitance : Cies, Coes, Cres [ nF ] 3 Cies 1.00 Coes 0.10 Cres 500 25 400 20 VGE 300 15 200 10 100 5 VCE 0 0.01 0 10 20 Collector-Emitter voltage : VCE [ V ] 30 0 0 40 80 Gate charge : Qg [ nC ] 120 Gate-Emitter voltage : VGE [ V ] Collector current : Ic [ A ] VGE=20V 12V Collector current : Ic [ A ] VGE=20V 15V 40 IGBT Module Outline Drawings, mm 7MBR30U2A060