FUJI ESAC83-004

ESAC83-004 (20A)
(40V / 20A )
Outline drawings, mm
SCHOTTKY BARRIER DIODE
15.5 Max.
4.5±0.2
Ø3.2±0.1
5.0±0.1
13.0
10.0
7.2±0.1
1.5
19.5±0.2
2.0
2
3
2.2
1.6
14.5±0.2
1
3.0±0.2
15±0.2
1.6
1.1
0.5
1.5
5.45 5.45
Features
JEDEC
Low VF
EIAJ
SC-65
Super high speed switching
Connection diagram
High reliability by planer design
種07.
機
定 h 20
Applications
High speed power switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
保uled befor new
Unit
40
V
tw=500ns, duty=1/40
48
V
Io
Square wave, duty=1/2
Tc=119°C
20*
A
IFSM
Sine wave
10ms
120
A
月sched mend
3
年
is com
t
7
c
00 odu t re
VRRM
Non-repetitive peak reverse voltage
VRSM
2 his pr
Surge current
T
rc
a
予
止 on m
ete ign.
廃
l
o
守 obs des
Conditions
3
Rating
Repetitive peak reverse voltage
Average output current
2
1
No
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
-40 to +150
°C
* Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM
IFM=8A
Reverse current
IRRM
VR=VRRM
Thermal resistance
Rth(j-c)
Junction to case
Max.
Unit
0.55
V
15
1.5
mA
°C/W
ESAC83-004 (20A)
(40V / 20A )
Characteristics
Forward Characteristic
Reverse Characteristic (typ.)
(typ.)
100
o
Tj=150 C
2
10
o
Tj=125 C
Forward Current
1
Tj=150
o
C
Tj=125
o
C
Tj=100
o
Tj=25
o
Reverse Current
(A)
(mA)
10
C
C
o
Tj=100 C
0
10
-1
10
o
Tj= 25 C
IR
0.1
1
10
IF
-2
10
-3
0.01
0.0
0.2
0.4
VF
0.6
0.8
Forward Voltage
1.0
10
1.2
0
10
20
VR
(V)
30
種07.
機
定 h 20
11
Io
10
360°
DC
λ
(W)
Reverse Power Dissipation
360°
10
o
Square wave λ =60
VR
rc
a
予
止 on m
8
α
7
6
ete ign.
l
o
es
bs
d
o
be new
d
le for
u
d
e
nd
h
e
c
is s comm
t
c
u
re
d
t
o
o
r
N
is p
o
Sine wave λ =180
o
Square wave λ =180
DC
4
2
9
廃
守
保
o
Square wave λ =120
月
3
年
7
00
PR
Forward Power Dissipation
WF
(W)
12
6
50
(V)
Reverse Power Dissipation
Forward Power Dissipation
14
8
40
Reverse Voltage
5
o
α =180
4
3
2
1
Per 1element
0
0
2
2h
Io
T
4
6
8
Average Forward Current
0
0
10
5
10
15
VR
(A)
Current Derating (Io-Tc)
20
25
Reverse Voltage
30
35
40
45
(V)
Junction Capacitance Characteristic (typ.)
160
10000
150
C)
(pF)
140
Junction Capacitance
o
DC
o
Sine wave λ =180
120
o
Square wave λ=180
o
Square wave λ=120
110
360°
λ
Io
100
o
Tc
1000
Cj
Case Temperature
(
130
Square wave λ=60
VR=30V
90
80
0
5
10
Io
15
20
Average Output Current
25
(A)
λ :Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
30
100
1
10
VR
Reverse Voltage
100
(V)
ESAC83-004 (20A)
(40V / 20A )
Surge Capability
100
I FSM
Peak Half - Wave Current
(A)
1000
10
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
種07.
機
定 h 20
1
o
C/W )
10
(
rc
a
予
止 on m
Transient Thermal Impedance
0
10
ete ign.
廃
l
o
守 obs des
保uled befor new
-1
10
-2
10
-3
10
月sched mend
3
年
is com
t
7
c
00 odu t re
10
-2
2 his pr
T
-1
0
10
t
10
Time
(sec.)
No
10
1
2
10