FUJITSU MB94R215B

FUJITSU MICROELECTRONICS
DATA SHEET
DS04-32101-1Ea
ASSP SmartCard
Microcontroller for Multiapplication SmartCard
HIFERRON Series
MB94R215B
■ DESCRIPTION
MB94R215B is a one-chip micro-controller for IC cards, with a combination of contact/contactless functions. Based
around the FR65E core, it includes in built functions such as a timer, FRAM, DES, RSA, contact interface,
contactless RF interface, etc.
The MB94R215B is optimized for contact/contactless IC card applications.
■ FEATURE
• FR CPU
• 32-bit RISC, load/store architecture with a five-stage pipeline
• 16 - bit fixed length instructions (basic instructions), 1 instruction per cycle
• Instruction set optimized for embedded applications : Memory-to-memory transfer, bit manipulation, barrel shift
etc.
• Instructions adapted for high - level languages : Function entry/exit instructions, multiple - register load/store
instructions
• Register interlock functions : Facilitating coding in assemblers
• Built-in multiplier with instruction-level support
32-bit multiplication with sign : 5 cycles
16-bit multiplication with sign : 3 cycles
• Interrupt (PC and PS save) : 6 cycles, 16 priority levels
• Harvard architecture allowing program access and data access to be executed simultaneously
• Instruction compatible with FR family
(Continued)
Copyright©2004-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2004.10
MB94R215B
(Continued)
• Contactless IC card I/F
• Operating magnetic field strength : 4.0 to 7.5 A/m (in recommended antenna pattern)
• Load modulation strength (Min) : 30/H1.2 (mVpeak) (in recommended antenna pattern)
• Antenna input pin capacity : 75 pF
• Communication protocol : ISO 14443 TypeB T = CL 106 Kbps, 212 Kbps Input clock frequency = 13.56 MHz
• Receive data demodulation and send data modulation for contactless I/F
• Variety of error detection function (frame, overrun, exceeding ISO regulation time)
• Contact IC card I/F (5 V I/F)
• Support for power supply voltage = 5 V ± 0.5 V and input clock frequency = 1 MHz to 5 MHz (ISO 7816 Class-A)
• Communication protocol : ISO 7816/T = 0, 1
Operation is confirmed for Fi = 372 with Di = 1, 2, 4, 8, and for Fi = 512 with
Di = 1, 2, 4, 8, 16.
• Built-in memory
• MASK ROM of 128 KB
• DATA RAM (SRAM) of 8 KB
• FRAM (Nonvolatile memory) of 32 KB
• Cryptosystem coprocessor
• DES coprocessor
• ECB mode corresponding (The CBC mode corresponds by XOR and transfer instruction.)
• Operating at 20 coproclocks
• RSA coprocessor
• Maximum key length 1024 bits
• High-speed Montgomery multiplication surplus (REDC) calculations using 32-bit data processing
• ECC (Prime Finite Fields) : Maximum key length 224 bits
2
MB94R215B
■ PIN ASSIGNMENT
3.00
1
5
2.40
2
6
2.40
3
7
3.00
0.20
R 2.00
4
8
0.20
11.40
0.20
R 2.20
0.20
4.10
0.20
4.00
0.20
4.10
12.00
Unit : mm
(Continued)
3
MB94R215B
(Continued)
11.80
9.00
9
R 1.00
0.50
5.00
9.50
13.00
5.00
1.00
2.00
(0.46)
1.80
0.195 ± 0.05
0.90
10
2.00
Unit : mm
Pin No.
Pin Name
Chip
Correspondence
1
VCC
EXT5V
2
RST
INITX
Reset input*
3
CLK
CLK
Clock input*
4
RFU
N.C.
Empty pin*
5
GND
VSS
Ground pin*
6
VPP
N.C.
Program power supply (not used in this module) *
7
I/O
SDIO
Data input/output*
8
RFU
N.C.
Empty pin*
9
PWRP
PWRP
Antenna pin for contactless. Located on rear of module
10
PWRM
PWRM
Antenna pin for contactless. Located on rear of module
* : Refer to ISO/IEC7816-2.
4
Function
Power supply pin*
MB94R215B
■ BLOCK DIAGRAM
FR CPU core
32
32
Bit search
SRAM 8 KB
Bus
converter
ROM 128 KB
FRAM 32 KB
RSA
DES
32
32 to 16
adapter
PLL
Clock
generator
16
Power supply warning
and detection circuit
Interrupt
controller
3 ch reload timer
PWRP
PWRM
Contactless
RF I/F
Interrupt
management
BSIO
INITX
CLK
Each register
Contact I/F
SDIO
CLK/RST
controller
5
MB94R215B
■ HANDLING DEVICES
1. Preventing Latchup
Latch-up may occur in a CMOS IC if a voltage greater than VCC or less than VSS is applied to an input or output
pin, or if an above-rating voltage is applied between VCC and VSS. A latchup, if it occurs, significantly increases
the power supply current and may cause thermal destruction of an element. When you use a CMOS IC, be very
careful not to exceed the absolute maximum rating.
2. Treatment of N.C. pins
Be sure to use NC pins in open state.
3. Rising time for power supply voltage
Ensure that the power supply rise time is 100 µs or less when using contact mode operation but, which may
cause misoperation resulting in the corruption of FRAM data.
4. Power supply off time
Ensure that the power supply off time is 1ms or longer when using contact mode operation.
5. Magnetic field strength rise time
See the “■ RF INTERFACE in CONTACTLESS OPERATION” section for points to note regarding contactless
operation.
6. When using both contact and contactless operation
When operating in contact mode, ensure there is no RF input from the antenna. When operating in contactless
mode, ensure that the contact terminals are open circuit.
6
MB94R215B
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Symbol
Min
Max
Unit
Power supply voltage
VCC
− 0.5
6.0
V
Input voltage
VIN
− 0.5
VCC + 0.5
V
VOUT
− 0.5
VCC + 0.5
V
TA
− 20
+ 80
°C
Storage temperature
TSTG
− 40
+ 85
°C
Voltage between antenna pins
(Peak-Peak voltage)
VANT

20
V
Output voltage
Operating temperature
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Value
Min
Typ
Max
Unit
Power supply voltage
VCC
4.5
5.0
5.5
V
“H” level input voltage
VIN


VCC + 0.5
V
“L” level input voltage
VOUT
− 0.5

+ 0.6
V
Operating temperature
TA
− 20

+ 80
°C
Operating magnetic field
strength*

4.0

7.5
A/m
Load modulation level

30


1/H1.2 (mVpeak)
VANT


20
V
Voltage between antenna pins
(Peak-Peak voltage)
* : In reference antenna pattern
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
representatives beforehand.
7
MB94R215B
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(1) Power supply voltage and current
Parameter
Symbol
Conditions
Operating power supply
current
ICC
Standby current
ICS
Value
Unit
Min
Typ
Max
*1


8.0
mA
*2


2.0
mA
*1 : 4.5 V < VCC < 5.5 V, CLK input = 3.57 MHz, no PLL using, at Java Card OS operating
*2 : 4.5 V < VCC < 5.5 V, CLK stop
(2) I/O pin
Parameter
Symbol
Conditions
“H” level input voltage
VIH
“L” level input voltage
Value
Unit
Min
Typ
Max

0.7 × VCC

VCC
V
VIL

0.0

0.15 × VCC
V
“H” level input current
IIH
*1
− 10

+ 10
µA
“L” level input current
IIL
*1
− 200

+ 10
µA
“H” level output voltage
VOH
*2
0.7 × VCC

VCC
V
“L” level output voltage
VOL
*3
0.0

0.15 × VCC
V
“H” level output current
IOH
*4
− 1000

+ 10
µA
“L” level output current
IOL
*5
− 0.01

+ 8.0
mA
*1 : VCC = 5.5 V
*2 : Chip external pull-up resistance : 20 kΩ
*3 : IOL = 1 mA
*4 : VOH = 0.7 × VCC
*5 : VOL = 0.15 × VCC
(3) CLK pin
Parameter
Symbol
Conditions
“H” level input voltage
VIH
“L” level input voltage
Unit
Min
Typ
Max

0.7 × VCC

VCC
V
VIL

0.0

0.5
V
“H” level input current
IIH
*
− 10

+ 10
µA
“L” level input current
IIL
*
− 100

+ 10
µA
* : VCC = 5.5 V
8
Value
MB94R215B
(4) RST pin
Parameter
Symbol
Conditions
“H” level input voltage
VIH
“L” level input voltage
Value
Unit
Min
Typ
Max

0.8 × VCC

VCC
V
VIL

0.0

0.12 × VCC
V
“H” level input current
IIH
*
− 10

+ 10
µA
“L” level input current
IIL
*
− 200

+ 10
µA
* : VCC = 5.5 V
(5) Antenna pin
Parameter
Symbol
Conditions
Capacity between antenna
pins
Cant
Load modulation circuit
resistance
Rmod
Value
Unit
Min
Typ
Max
0.1 Vrms
60
68
75
pF
Resistance between
antenna and GND
600
750
900
Ω
9
MB94R215B
2. AC Characteristics
(1) Contact operation
Parameter
Symbol
Conditions
Input CLK frequency
FCLK
Communication speed
Value
Unit
Min
Typ
Max

1

5
MHz
CRATE



112
Kbps
Output signal rising
tr
*


1.0
µs
Output signal falling
tf
*


1.0
µs
* : External capacitance of I/O pins = 50 pF
(2) Contactless operation
Parameter
Symbol
Conditions
Antenna input frequency
Fin
Resonant frequency
ASK modulation level
Value
Unit
Min
Typ
Max
Antenna
connection
13.553
13.560
13.567
MHz
Fr
Antenna
connection

16.0

MHz
Vask
Antenna
connection
8

14
%
Vsub
Antenna
connection
4.0 A/m
(Magnetic
Field Strength)
30


1/H1.2 (mVpeak)
Operating magnetic field
strength
H
Antenna
connection
4.0

7.5
A/m
Communication speed

Antenna
connection

106

Kbps
Load modulation level
3. Pin capacity
Parameter
Symbol
Value
Min
Typ
Max
Unit
I/O
CIH

8.0

pF
CLK
CIL

8.0

pF
RST
CIH

8.0

pF
Note : Capacitance between pins and ground (measured by 0.1 Vpp and 1 MHz signal)
4. FRAM characteristics (data retaining characteristics)
Parameter
10
Conditions
Value
Min
Typ
Max
Unit
Data retaining
Ta ≤ + 55 °C
10


year
Number of writes
Ta ≤ + 55 °C
1010


number
MB94R215B
■ REFERENCE ANTENNA PATTERN
The pattern below is intended for reference data when designing the antenna. When developing a card, please
take note of the module characteristics when designing the antenna pattern.
3.00 mm
3.00 mm
16.89 mm
2.00 mm
94RXXX
2.00 mm
39.98 mm
16.12 mm
71.60 mm
R = 0.5 mm
11
MB94R215B
■ RF INTERFACE in CONTACTLESS OPERATION
1. Flow at carrier ON
Communications between PICC (card) and PCD (R/W) is based on a "PCD Talk First" protocol in accordance
with the procedure described below.
(1) RF power is supplied to PICC by the magnetic field generated by PCD.
(2) PICC is able to receive within 5 ms of RF power on.
(3) PICC waits with no response until receiving a command from PCD (receive standby state).
(4) PCD sends a command to PICC (sent approx. 10 ms after RF power on).
(5) PICC executes the operation specified by the PCD instruction and sends a response to PCD on completion.
• Time standard at carrier ON
5 ms (Max)
2 ms (Max)
Carrier ON
PICC : ASK reception enabled
100 µs to 500 µs
2. Power supply
(1) Carrier frequency fc : 13.56 MHz ± 7 kHz
(2) PICC operating magnetic field strength (when not modulated) : 4.0 A/m to 7.5 A/m
12
MB94R215B
3. Interface of signal
(1) Data transmission from PCD to PICC
• Communication speed fb : 105.9375 Kbps / 211.8750 Kbps
• Method of modulation type : ASK
• Modulation level m :
PICC : 8.0% to 14.0%
PCD : 30/H1.2 (mVpeak)
• Bit coding
Logic “1” : High magnetic field amplitude (with no modulation)
Logic “0” : Low magnetic field amplitude
The modulation level m is defined by the formula m = (a − b) / (a + b) as shown in the figure below. Here, a and
b are the maximum and minimum amplitudes of the magnetic field strength generated by PCD. The rising and
falling edges of these amplitude changes are monotonic. The transition times are 1 µs or less.
• Definition of modulation level
v
a
v = 0.2 × (a − b)
b
tf
tr
(2) Data transmission from PICC to PCD
• Communication speed fb : 105.9375 Kbps (fc/128)
• Method of data transmission : Load Modulation
PCD always sends logic “1” during data transfer from PICC.
• Load modulation sub-carrier frequency fs : 847.5 kHz (fc/16)
• Method of sub-carrier modulation : BPSK
Phase changes occur at valid timings on the sub-carrier rise and fall.
The sub-carrier fs is modulated by the data using BPSK modulation. The carrier fc is further amplitude
modulated by the phase-changed sub-carrier.
• Bit coding : NRZ-L
• Load Modulation load resistance : Modulation circuit resistance 150 Ω
13
MB94R215B
4. Notes on carrier
When handling the device for the contactless IC cards, observe the following to prevent the improper operation
or damage to the device. Keep in mind, however, that the transmission characteristics are dependent on the
antenna design and reader/writer characteristics, so the values below are only for reference and the values
below are not intended to guarantee the finished card characteristics. Ensure that operation and transmission
characteristics have no problems in the environments where you use a card.
(1) Rising of carrier
Ensure that the carrier rise time is in the range 100 µs to 500 µs and that the carrier rises continuously with a
deviation of ± 2.4% or less.
• Rising waveform of carrier
Deviation = (A − B) / (A + B)
A
B
Rising Time = 100 µs to 500 µs
(2) Falling of carrier
Ensure that the carrier fall time is in the range 100 µs to 100 ms and that the carrier falls continuously with a
deviation of ± 2.4% or less.
• Falling waveform of carrier
Deviation = (A − B) / (A + B)
B
A
Falling time = 100 µs to 100 ms
14
MB94R215B
(3) Stop of carrier
The MB94R215B has internal capacitance to smooth the power supply and similar. Accordingly, always provide
a gap of 100 ms or longer between halting and restarting the carrier to allow the internal state to stabilize.
• Stop time of carrier
Carrier stop
time ≥ 100 ms
(4) Carrier deviation (noise, momentary stop, etc.)
Ensure that the deviation when not modulated is ± 2.4% or less. The following problems may occur if variation
(noise) in excess of this limit occurs.
• If the carrier falls within the ASK modulation level range (8 to 14%), this may be misinterpreted as a modulation signal. However, if the frame is determined to be invalid, the command receive block will be cleared and
the device will return to the command standby state.
• If the carrier variation exceeds the ASK modulation level range in the region 0 A/m to 12 A/m, misoperation
may occur and internal circuits may reset. In this case, temporarily turn off the carrier in accordance with the
precautions in "(3) Stop of carrier". If the carrier is not turned off, misoperation may corrupt internal data.
• If the carrier exceeds the ASK modulation level range over 12A/m, the device may be damaged due to the
increase in internal voltage.
• Carrier deviation
12 A/m
4 A/m
C
D
E
Deviation = (C − D) / (C + D) × 100
= (E − C) / (E + C) × 100
15
MB94R215B
(5) Operating conditions
Contactless devices (cards) can only be used in a one-to-one communication with a reader/writer. Do not try to
use the MB94R215B embedded card to a reader/writer with multiple other contactless cards. Use of multiple
contactless devices may corrupt data or cause the device to misoperate.
Using the device in the presence of strong magnetic fields (12 A/m or stronger) or with reader/writers that do
not match the specifications may cause data corruption.
16
MB94R215B
■ MARKING
MB94R215BPMB Seal diagram
MB94R215B
9
XXX
Font
Character height
9
XXX
: Gothic
: 1 mm
: Year code 1 character
: Month code 1 character
: Factory symbol
: Serial number 2 characters
: ROM code
■ ORDERING INFORMATION
Part number
Package
Remarks
MB94R215BPMB
CRD-10P-M05
For Dual Interface
17
MB94R215B
MEMO
18
MB94R215B
MEMO
19
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,
Tokyo 163-0722, Japan
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http://jp.fujitsu.com/fml/en/
For further information please contact:
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Tsimshatsui, Kowloon
Hong Kong
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All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS
does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS
or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or
other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect
to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in
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weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising
in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions.
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The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited
Strategic Business Development Dept.