YG831C03R (30V / 5A TO-22OF15) Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 13Min 3.7±0.2 1.2±0.2 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2 2.7±0.2 JEDEC EIAJ Applications +0.2 -0 0.7±0.2 SC-67 Connection Diagram High speed power switching. 2 Maximum Ratings and Characteristics 1 3 Absolute Maximum Ratings Item Symbol Repetitive peak reverse voltage VRRM Repetitive peak surge reverse voltage VRSM Isolation voltage Viso Average output current IO Surge current IFSM Operating junction temperature Tj Storage temperature Tstg Conditions tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=130°C Square wave Sine wave 10ms Symbol Unit 30 V 35 *1 V 1500 5* Conditions V A 100 A +150 °C -40 to +150 Electrical Characteristics (Ta=25°C Unless otherwise specified ) Item Rating °C * Out put current of centertap full wave connection. *1 : Tentative Max. Unit Forward voltage drop ** VF IF=2.0A 0.45 V Reverse current ** IR VR=VRRM 5.0 mA Thermal resistance Rth(j-c) Junction to case 5.0 °C/W ** Rating per element Mechanical Characteristics Mounting torque Weight Recommended torque 0.3 to 0.5 2.3 N·m g (30V / 5A TO-22OF15) YG831C03R Characteristics Forward Characteristic (typ.) Reverse Characteristic (typ.) 1 o Tj=150 oC Tj=125 C o Tj=100 C o Tj=25 C IR IF 0.01 0.0 0.1 0.2 0.3 2.0 0.4 0.5 0.6 0.7 Forward Voltage 0.8 0.9 Tj=125 C 10 1 o Tj=100 C 10 10 10 10 1.0 0 o -1 Tj=25 C -2 -3 0 5 10 VR (V) Forward Power Dissipation 15 20 25 30 35 Reverse Voltage (V) Reverse Power Dissipation Io 1.6 360° 1.4 1.2 o Square wave λ=60 o Square wave λ=120 1.0 o Sine wave λ =180 o Square wave λ =180 DC 0.8 360° 5.5 DC 5.0 λ Reverse Power Dissipation 1.8 (W) 6.0 0.6 0.4 VR 4.5 α 4.0 3.5 3.0 2.5 2.0 α =180 o 1.5 1.0 0.2 Per 1element 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Io 160 Average Forward Current PR (W) VF Forward Power Dissipation o Tj=150 C o 0.1 WF 2 10 Reverse Current (mA) Forward Current (A) 10 0.5 0.0 0 (A) 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 VR Reverse Voltage (V) Junction Capacitance Characteristic (typ.) Current Derating (Io-Tc) 140 DC 135 Sine wave λ=180 o 130 Square wave λ=180 o 125 Square wave λ=120 o 120 115 Square wave λ=60 360° λ Io o 110 1000 100 Cj Case Temperature Tc 145 Junction Capacitance (pF) 150 o ( C) 155 VR=20V 105 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Io Average Output Current (A) λ:Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection 10 10 VR Reverse Voltage 100 (V) YG831C03R (30V / 5A TO-22OF15) Surge Capability 100 I FSM Peak Half - Wave Current (A) 1000 10 1 10 100 Number of Cycles at 50Hz 2 Transient Thermal Impedance Transient Thermal Impedance o ( C/W) 10 1 10 0 10 -1 10 -3 10 -2 -1 10 0 10 t 10 Time 1 10 2 10 (sec.) Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com