2324-20 20 Watts, 24 Volts, Class C Microwave 2300-2400 MHz GENERAL DESCRIPTION The 2324-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier applications. It includes input and output pre matching and utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. This transistor uses a fully hermetic High Temperature Solder Sealed package. CASE OUTLINE 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 58 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 40 Volts 3.5 Volts 3.0 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg ηc VSWR Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance BVebo BVces Hfe Cob θjc Emitter to Base Breakdown Collector to Emitter Breakdown DC Current Gain Capacitance* Thermal Resistance TEST CONDITIONS F = 2.3 - 2.4 GHz Vcc = 24 Volts MIN TYP MAX 20 4.0 7.0 40 UNITS Watts Watts dB % 10:1 Ie = 25 mA I = 160 mA Vce = 5 V, Ic =160mA 3.5 40 10 Volts Volts 100 3.0 o pF C/W * Not measurable due to internal prematch network Issue August 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 2324-20 August 1996